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    1000 CLASS AB POWER AMPLIFIER Search Results

    1000 CLASS AB POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM4673SDBD/NOPB Texas Instruments Filterless, 2.65W, Mono, Class D Audio Power Amplifier Visit Texas Instruments Buy
    TPA2080D1YZGR Texas Instruments 2.2W Constant Output Power Class-D Audio Amplifier w/ Class-G Boost Converter 12-DSBGA -40 to 85 Visit Texas Instruments Buy
    TPA2080D1YZGT Texas Instruments 2.2W Constant Output Power Class-D Audio Amplifier w/ Class-G Boost Converter 12-DSBGA -40 to 85 Visit Texas Instruments
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    1000 CLASS AB POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RAC012-03

    Abstract: No abstract text available
    Text: RF100140 - 1000 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations and 230 V AC power supply. The amplifier is accommodated in a 19" system housing.


    Original     		PDF RF100140 RS232 RS485 RAC012-03 RAC009-01 RAC012-03 F33370

    MRA0510-50H

    Abstract: No abstract text available
    Text: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400X425 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES: • Omnigold Metalization System • Diffused Ballast Resistors.


    Original     		PDF MRA0510-50H 400X425 MRA0510-50H

    MOTOROLA POWER TRANSISTOR

    Abstract: motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers


    Original     		PDF MRA0510 50H/D MRA0510-50H 50H/D MOTOROLA POWER TRANSISTOR motorola rf Power Transistor

    100B102JT50XT

    Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
    Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio


    Original     		PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B

    MRF8P9040N

    Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N 728-9subsidiaries, MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 MRF8P9040N MPZ2012S300AT000 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT J583

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

    motorola sps transistor

    Abstract: MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers


    Original     		PDF MRA0510 50H/D MRA0510-50H motorola sps transistor MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor

    transistor j241

    Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor

    CRCW120610R0JNEA

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9120N MRF8S9120NR3 CRCW120610R0JNEA

    RF230

    Abstract: No abstract text available
    Text: Preliminary data sheet RF230 - 1000 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.


    Original     		PDF RF230 RS232 F33370

    MRA0510-50H

    Abstract: No abstract text available
    Text: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. E FEATURES: B C B C • Omnigold Metalization System • Diffused Ballast Resistors.


    Original     		PDF MRA0510-50H MRA0510-50H

    Untitled

    Abstract: No abstract text available
    Text: 5.8V 1.2W RF Power Amplifier IC for ISM900 ITT334104BD Applications Features • • • • • • • 900 MHz ISM Cordless Telephones Wireless Modems N-PCS +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND Class AB Bias 850 to 1000 MHz Operation


    Original     		PDF ISM900 ITT334104BD

    itt333104bd

    Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S IS-54
    Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications Features IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) • • • • • • Class AB Bias 800 to 1000 MHz Operation 50 Ω Input Impedance Simple 2 Element Output Match


    Original     		PDF IS-54/IS-136) ITT333104BD IS-54/IS-136 itt333104bd 1008CS C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S IS-54

    SG9156AC

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS SG9156AC Silicon NPN power UHF push-pull transistor SG9156AC is designed for wide band power transmitter equipment 600-1000 Mhz frequency band. Suitable for Class AB high power TV amplifiers bands IV or V . Output Power: Frequency Range:


    OCR Scan     		PDF SG9156AC SG9156AC

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics:


    OCR Scan     		PDF HLP-42) MRA0510-50H

    RF Transistor impedance matching

    Abstract: MRA05
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Pow er Transistor M RA0510-50H Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range, • Designed for Class AB Linear Power Amplifiers


    OCR Scan     		PDF RA0510-50H HLP-42) MRA0510-50H RF Transistor impedance matching MRA05

    Untitled

    Abstract: No abstract text available
    Text: 3.6V 1.1W RF Power Amplifier IC for N-PCS/ISM900 ITT2106BD Applications PRELIMINARY Features Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Class AB Bias 800 to 1000 MHz Operation Single Element Input Match Single Element Output Match


    OCR Scan     		PDF N-PCS/ISM900 ITT2106BD 025---I

    Untitled

    Abstract: No abstract text available
    Text: 3.6V 1.2W RF Power Amplifier 1C for N-PCS/ISM900 ITT2104BD Applications PRELIMINARY Features Two-Way Paging Wireless Modems • • • • • • • • Cordless Telephones Telemetry 900 MHz ISM Single Positive Supply Class AB Bias 800 to 1000 MHz Operation


    OCR Scan     		PDF N-PCS/ISM900 ITT2104BD 010--j

    Untitled

    Abstract: No abstract text available
    Text: 3.6V 1.1W RF Power Amplifier IC for N-PCS/ISM90C ITT2106BD Applications PRELIMINARY Features Two-Way Paging • • • • • • • Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Class AB Bias 800 to 1000 MHz Operation Single Element Input Match


    OCR Scan     		PDF N-PCS/ISM90C ITT2106BD

    itt333104bd

    Abstract: No abstract text available
    Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications PRELIMINARY Features IS-54/IS-136 Digital AMPS Cellular Telephones • • • • • • Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 £2 Input Impedance


    OCR Scan     		PDF IS-54/IS-136) ITT333104BD IS-54/IS-136 itt333104bd

    04 ow

    Abstract: No abstract text available
    Text: 4.6V 1.0W RF Power Amplifier IC for ISM900 ITT333103BD Applications Features 900 MHz ISM • • • • • • • Cordless Telephones Wireless Modems N-PCS — Class AB Bias 850 to 1000 MHz Operation 50 £2 Input Impedance Simple 2 Element Output Match


    OCR Scan     		PDF ISM900 ITT333103BD December-1996 04 ow

    Untitled

    Abstract: No abstract text available
    Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match


    OCR Scan     		PDF IS-54/IS-136) ITT333104BD IS-54/IS-136

    ITT333104BD

    Abstract: No abstract text available
    Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match


    OCR Scan     		PDF IS-54/IS-136) ITT333104BD IS-54/IS-136 07850Q ITT333104BD