SG9156AC
Abstract: No abstract text available
Text: GAE GREAT AMERICAN ELECTROINCS SG9156AC Silicon NPN power UHF push-pull transistor SG9156AC is designed for wide band power transmitter equipment 600-1000 Mhz frequency band. Suitable for Class AB high power TV amplifiers bands IV or V . Output Power: Frequency Range:
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SG9156AC
SG9156AC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers • Specified 28 Volt, 1000 MHz Characteristics:
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HLP-42)
MRA0510-50H
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RAC012-03
Abstract: No abstract text available
Text: RF100140 - 1000 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A/AB and includes RF protection circuits,cooling installations and 230 V AC power supply. The amplifier is accommodated in a 19" system housing.
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RF100140
RS232
RS485
RAC012-03
RAC009-01
RAC012-03
F33370
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MRA0510-50H
Abstract: No abstract text available
Text: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400X425 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. FEATURES: • Omnigold Metalization System • Diffused Ballast Resistors.
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MRA0510-50H
400X425
MRA0510-50H
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MOTOROLA POWER TRANSISTOR
Abstract: motorola rf Power Transistor
Text: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers
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MRA0510
50H/D
MRA0510-50H
50H/D
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
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RF Transistor impedance matching
Abstract: MRA05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Pow er Transistor M RA0510-50H Designed primarily for wideband, large-signal output and driver amplifier stages in the 500 to 1000 MHz frequency range, • Designed for Class AB Linear Power Amplifiers
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RA0510-50H
HLP-42)
MRA0510-50H
RF Transistor impedance matching
MRA05
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Untitled
Abstract: No abstract text available
Text: 3.6V 1.1W RF Power Amplifier IC for N-PCS/ISM900 ITT2106BD Applications PRELIMINARY Features Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Class AB Bias 800 to 1000 MHz Operation Single Element Input Match Single Element Output Match
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N-PCS/ISM900
ITT2106BD
025---I
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100B102JT50XT
Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio
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MRF284LR1
MRF284
100B102JT50XT
100B120JT500XT
100B100JT500XT
CDR33BX104AKYS
MRF284
MRF284LR1
T491X226K035AT
100B510JT500XT
A04T-5
microstrip resistor
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MRF8P9040N
Abstract: mrf8p ATC100B820JT RO4350B
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
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MRF8P9040N
MRF8P9040NR1
MRF8P9040NBR1
728-its
MRF8P9040N
mrf8p
ATC100B820JT
RO4350B
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MRF8P9040N
Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
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MRF8P9040N
728-9subsidiaries,
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
MRF8P9040N
MPZ2012S300AT000
AN1955
293D106X9050E2TE3
MRF8P9040NB
ATC100B820JT
J583
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for
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MRF8P9040N
MRF8P9040NR1
MRF8P9040GNR1
MRF8P9040NBR1
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motorola sps transistor
Abstract: MOTOROLA POWER TRANSISTOR 14 905 motorola BALLAST MOTOROLA MRA0510-50H motorola rf Power Transistor
Text: MOTOROLA Order this document by MRA0510–50H/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA0510-50H Designed primarily for wideband, large–signal output and driver amplifier stages in the 500 to 1000 MHz frequency range. • Designed for Class AB Linear Power Amplifiers
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MRA0510
50H/D
MRA0510-50H
motorola sps transistor
MOTOROLA POWER TRANSISTOR 14
905 motorola
BALLAST MOTOROLA
MRA0510-50H
motorola rf Power Transistor
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transistor j241
Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9120N
MRF8S9120NR3
transistor j241
ATC100B2R7BT500XT
mrf8s9120
AN1955
ATC100B390J
ATC100B0R8BT500XT
j239 transistor
j353
J181
J239 mosfet transistor
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CRCW120610R0JNEA
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S9120N
MRF8S9120NR3
CRCW120610R0JNEA
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MRA0510-50H
Abstract: No abstract text available
Text: MRA0510-50H NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 4L FLG. DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. E FEATURES: B C B C • Omnigold Metalization System • Diffused Ballast Resistors.
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MRA0510-50H
MRA0510-50H
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Untitled
Abstract: No abstract text available
Text: 3.6V 1.2W RF Power Amplifier 1C for N-PCS/ISM900 ITT2104BD Applications PRELIMINARY Features Two-Way Paging Wireless Modems • • • • • • • • Cordless Telephones Telemetry 900 MHz ISM Single Positive Supply Class AB Bias 800 to 1000 MHz Operation
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N-PCS/ISM900
ITT2104BD
010--j
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Untitled
Abstract: No abstract text available
Text: 3.6V 1.1W RF Power Amplifier IC for N-PCS/ISM90C ITT2106BD Applications PRELIMINARY Features Two-Way Paging • • • • • • • Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Class AB Bias 800 to 1000 MHz Operation Single Element Input Match
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N-PCS/ISM90C
ITT2106BD
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itt333104bd
Abstract: No abstract text available
Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications PRELIMINARY Features IS-54/IS-136 Digital AMPS Cellular Telephones • • • • • • Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 £2 Input Impedance
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IS-54/IS-136)
ITT333104BD
IS-54/IS-136
itt333104bd
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04 ow
Abstract: No abstract text available
Text: 4.6V 1.0W RF Power Amplifier IC for ISM900 ITT333103BD Applications Features 900 MHz ISM • • • • • • • Cordless Telephones Wireless Modems N-PCS — Class AB Bias 850 to 1000 MHz Operation 50 £2 Input Impedance Simple 2 Element Output Match
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ISM900
ITT333103BD
December-1996
04 ow
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Untitled
Abstract: No abstract text available
Text: 5.8V 1.2W RF Power Amplifier IC for ISM900 ITT334104BD Applications Features • • • • • • • 900 MHz ISM Cordless Telephones Wireless Modems N-PCS +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND Class AB Bias 850 to 1000 MHz Operation
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ISM900
ITT334104BD
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itt333104bd
Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL1608-F1N8S IS-54
Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Applications Features IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) • • • • • • Class AB Bias 800 to 1000 MHz Operation 50 Ω Input Impedance Simple 2 Element Output Match
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IS-54/IS-136)
ITT333104BD
IS-54/IS-136
itt333104bd
1008CS
C0805C472K5RAC
C1206C104K5RAC
LL1608-F1N8S
IS-54
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Untitled
Abstract: No abstract text available
Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match
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IS-54/IS-136)
ITT333104BD
IS-54/IS-136
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PDF
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ITT333104BD
Abstract: No abstract text available
Text: 4.6V RF Power Amplifier for DAMPS IS-54/IS-136 ITT333104BD Features Applications • • • • • • IS-54/IS-136 Digital AMPS Cellular Telephones Cellular Digital Packet Data (CDPD) Class AB Bias 800 to 1000 MHz Operation 50 Q Input Impedance Simple 2 Element Output Match
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IS-54/IS-136)
ITT333104BD
IS-54/IS-136
07850Q
ITT333104BD
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ITT333105BD
Abstract: 1008CS C0805C472K5RAC C1206C104K5RAC LL2012-F1N5S
Text: 4.6V 1.3W RF Power Amplifier IC for ETACS ITT333105BD Applications PRELIMINARY Features • • • • • • • ETACS Cellular Telephones ISM 900 MHz +VDD1 +VDD2 +VDD1 +VDD2 GND GND GND GND RFIN RFOUT GND GND GND GND N/C -VGG Class AB Bias 800 to 1000 MHz Operation
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ITT333105BD
ITT333105BD
1008CS
C0805C472K5RAC
C1206C104K5RAC
LL2012-F1N5S
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