HTSS242150
Abstract: HTSS372125 HTSS242125 Hi-Tech Fuses
Text: Trans-Guard OS Shorty Fuse C A ⁄4-20 threaded hole 1 ⁄2" deep both ends 1 Dimensional Information NOMINAL FUSE VOLTAGE RATING (KV) 8.3 17.2 15.5 23.0 38.0 CURRENT RATING (AMPS) FUSE CAT. NO. 40 HTSS232040 50 65 80 100 125 150 165 200 30 40 50 65 80
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HTSS232050
HTSS232065
HTSS232080
HTSS232100
HTSS232125
HTSS232150
HTSS232165
HTSS232200
HTSS240030
HTSS240040
HTSS242150
HTSS372125
HTSS242125
Hi-Tech Fuses
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Power MOSFET SOT-223
Abstract: sot-223 code marking tsm1n45 power mosfet to92 07 MARKING CODE MOSFET TSM1N45CT TO-223 MOSFET TSM1N45CW mosfet to92
Text: TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
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TSM1N45
OT-223
TSM1N45
Power MOSFET SOT-223
sot-223 code marking
power mosfet to92
07 MARKING CODE MOSFET
TSM1N45CT
TO-223 MOSFET
TSM1N45CW
mosfet to92
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FR1003G
Abstract: 1004G 1001G 94v-o 1002G 1003G 1006G FR1001G FR1007G
Text: FR1001G - FR1007G Pb 10.0 AMPs. Glass Passivated Fast Recovery Rectifiers TO-220AB RoHS COMPLIANCE Features Glass passivated chip junction. High efficiency, Low VF High Current capability High reliability High Surge current capability Low power loss For use in low voltage , high frequency inventor,
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FR1001G
FR1007G
O-220AB
O-220AB
MIL-STD-202,
260oC/10
FR1003G
1004G
1001G
94v-o
1002G
1003G
1006G
FR1007G
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smd code c09
Abstract: No abstract text available
Text: TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant
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TS4448
350mW
MIL-STD-750,
smd code c09
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GBU 08
Abstract: GBU1001 GBU1007
Text: GBU1001 - GBU1007 Pb Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers GBU RoHS COMPLIANCE Features UL Recoganized File # E-326243 Glass passivated junction Ideal for printed circuit board High case dielectric strength of 1500Vrms Plastic material has Underwriters laboratory
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GBU1001
GBU1007
E-326243
1500Vrms
MIL-STD-202
125oC
GBU1001GBU1004
GBU1005GBU1007
GBU 08
GBU1007
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Untitled
Abstract: No abstract text available
Text: TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant
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TS4448
350mW
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS Large capacitance Series CF • Features: 105℃,2000hrs, Super Low ESR & large capacitance ■ Recommended Applications: Motherboard, DC/DC Converter , Adapter , SPS ,VCR , camcorder , DSC , PDA, HD Drive , MO Drive , DVD Drive, Navigation system,
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2000hrs,
35VDC
120Hz
100KHz,
120Hz.
100KHz
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HTDS342125
Abstract: HTSS232065
Text: PROTECTION AND CONTROL Trans-Guard OS and OS Shorty Fuses “B” “C” OS Backup Fuses “A” 1/4”-20 threaded hole 1/2” deep both ends Table 1 – DIMENSIONAL Information for Trans-Guard™ OS Fuses Nominal Fuse Voltage Rating (kV) 8.3 15.5 23.0
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HTDS232065
HTDS232100
HTDS332150
HTDS332165
HTDS242035
HTDS242045
HTDS242040
HTDS242050
HTDS242080
HTDS242100
HTDS342125
HTSS232065
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TSM6963SDCA
Abstract: No abstract text available
Text: TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 ID (A) 30 @ VGS = -4.5V -4.5 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V
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TSM6963SD
TSM6963SDCA
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Untitled
Abstract: No abstract text available
Text: Fusing Equipment Electrical Apparatus 240-98 ELSP Current-Limiting Backup Fuse GENERAL Eaton’s Cooper Power Systems ELSP Current-limiting Backup Fuse is used in series with low current primary protection devices such as a Bay-O-Net Fuse or MagneX Interrupter.
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Untitled
Abstract: No abstract text available
Text: D99 699) 0/4.,77C0;<:@0/ '7><,0 :A0 :4=00":A0<0%?;7C ,<DB18897805669395>3I0C,0C9J5 48D98E &300*)01,847C0:1080/4.,77C0,;<:@0/0'7><,0 :A0 :4=00;:A0<0=?;740=0;<:@4/0= ?; :?>;?>=50 >300 *)0 1,847C0 08;7:C=0 499:@,>4@00 ;7?20 20 ;7,C0 ,<.34>0.>?<00 ,77:A492
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DB18897805669395
48D98E
847C0
0807C0.
0AB04=
90E0849?
ECD930>
9C50E
BC8C0EB40549D9?
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Untitled
Abstract: No abstract text available
Text: A88 5E88) %74874900":A0<0%?;7C ,C5B0?>697EB12<50C,0C9J5 BF F " '010" +0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%010!"&! %0 & , =
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847C0
0B0AE8880B0
847C04
0170B4-700;
7C04904>
300A885E88
ECD930>
9C50E
ECD930
C9D9F50
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C 6492-0
Abstract: No abstract text available
Text: B99 6D99) 0/4.,77C0;<:@0/ '7><,0 :A0 :4=00":A0<0%?;7C ,<DB18897805669395>3I0C,0C9J5 48D98E " '020" +0"!)$ &300* 01,847C0:1080/4.,77C0,;<:@0/0'7><,0 :A0 :4=00;:A0<0=?;740=0;<:@4/0=0?; >:0 D99)0 490 ,90 0B><0807C0 .:8;,.>0 A'0 ;,.6,2070 "<:@4/4920 ?;0 >:0 0 4=:7,>0/0
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DB18897805669395
48D98E
847C0
0807C0
847C008
A4920?
90E0849?
ECD930>
9C50E
BC8C0EB40549D9?
C 6492-0
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TB222
Abstract: PH smd transistor PH
Text: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W
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TB222A
1-1000MHz
48Vdc
GX141
2N1893
U5305
MAX881
100nF
MIC7300
TB222
PH smd transistor PH
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marking code IR10 diode
Abstract: 1620ct C4511 MUR1 1640CT 1660CT MUR1620CT MUR1660CT ATCR
Text: s TAIWAN SEMICONDUCTOR K RoHS MUR1620CT - MUR1660CT 16.0 AMPS. Switchmode Power Rectifiers TO-22QAB COMPLIANCE 85(4.70) .175(4.4 .412(10.5) MAX , I 13(2.87) 03(2.62) ^ <> -y❖ ^ ^ PIN1 .045(1.14) / d —t Features .05511.40) DIA .154(3.91) - .148(3.74)
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MUR1620CT
MUR1660CT
O-22QAB
T0-220
50Vdc
5110ns/
marking code IR10 diode
1620ct
C4511
MUR1
1640CT
1660CT
MUR1660CT
ATCR
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GP1U0
Abstract: TD-220AB 22 1006 GP10 GP1001 GP1007 04V0
Text: TAIWAN SEMICONDUCTOR iS GP1001 -GP1007 10.0 AMPS. Glass Passivated Rectifiers RoHS T.Q.-22QAB C O M P L IA N C E irtr.4 ?:I Twnii •i.'l!W.' .lil!»; Features <> • i' 4 - <> ■ i' ■<r G la ss p a s s iv a ts d chi p ju n o tio n . H ig h e ffic ie n c y . Lo w V F
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GP1001
-GP1007
TQ-220AB
TD-220AB
MIL-STD-202,
10MH2
GP1U0
22 1006
GP10
GP1007
04V0
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1C010
Abstract: ci 94vo 1D04C DA1C 1002G HERF1001G HERF1008G 1D07 PABI MARKING 1D07G
Text: s HERF1001G - HERF1008G TAIWAN SEMICONDUCTOR Isolated 10.0 AM PS. Glass Passivated High Efficient Rectifiers ITO-22DAB RoHS COMPLIANCE Features <• Glass pEssiveted ch ip ju nction. <• ■ir High currant capability High reliability h igh su ipc currcn t capa bill ly
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HERF1001G
HERF1008G
ITO-220AB
ITO-220AB
MIL-STD-202.
HERF1008G)
1C010
ci 94vo
1D04C
DA1C
1002G
HERF1008G
1D07
PABI MARKING
1D07G
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Untitled
Abstract: No abstract text available
Text: NM 24C03/C05/C09/C17 2K -/4K -/8K -/16K -B it Serial EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The NM24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec trically erasable memory. These devices conform to all
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NM24C03/C05/C09/C17
24C03/C05/C09/C17
-/16K
NM24C03/C05/C09/C17
TL/D/11100-14
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MARKING code RAf
Abstract: marking CODE 1BS 1003G 1004G 1006G FRAF1001G FRAF1007G 1C02G
Text: FRAF1001G - FRAF1007G TAIWAN % SEMICONDUCTOR Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AC tò RoHS COM PLIANCE .4^ 1 Î0 - •¿¡MUHit I .iis;s.»i iiiijxsn: .1M0.4IDI* . '■ « f S t 'iB I * / □P Features <' <• <• <• <■
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FRAF1001G
FRAF1007G
ITO-22QAC
ITO-22DAC
MIL-STD-202.
35mrn)
1001G
FRAF1Q07G)
MARKING code RAf
marking CODE 1BS
1003G
1004G
1006G
FRAF1007G
1C02G
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24C03
Abstract: 24c05 M24C09
Text: NM24C03/C05/C09/C17 EH National Semiconductor N M 24C 03/C 05/C 09/C 17 2 K -/4 K -/8 K -/16K-Bit SeriaJ EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The N M 24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec
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NM24C03/C05/C09/C17
-/16K-Bit
24C03/C05/C09/C17
NM24Cxx
TL/D/11100--
TL/D/11100-12
24C03
24c05
M24C09
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10C2G
Abstract: URM 95 HERAF1001G WCJJ
Text: s ' TAIWAN SEMICONDUCTOR RoHS HERAF1001G - HERAF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers COMPLIANCE U Q £ 2QAG 4 .H e f . . | • _.ix uc.s:_ ■* ' »«.¿I i«: .um.oy, .U X .Z .x , iii'i.o;oiy .O ï.i.iii •î.-i:ao> .S K ifn .K ;.
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HERAF1001G
HERAF1008G
U0-220AC
HERAF1008G)
VE03EVO
07AVra
10C2G
URM 95
WCJJ
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tc-2b 94v-0
Abstract: pure sine wave inverter TC25SC mbrf 100 ct 125CC LF-H 14 S marking code ES3 UUU1 20H2 MBRF20H100CT
Text: % TAIW AN SEM ICONDUCTO R RoHS MBRF20H100CT - MBRF20H200CT Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AB 105!H7: COMPLIANCE •A M iwixu: .1- 212.051 .ic cß .ss: VMX .Z !Z \% V . n Features “ ^ •?' ■i> •> ■t' ■t' •> ■y- P lastic mate ri al used ca rries U nde rwrite rs Labo ratory
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MBRF20H100CT-
MBRF20H200CT
ITO-220AB
260cC
tc-2b 94v-0
pure sine wave inverter
TC25SC
mbrf 100 ct
125CC
LF-H 14 S
marking code ES3
UUU1
20H2
MBRF20H100CT
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1002C
Abstract: 1003G FRF1001G FRF1007G
Text: % FRF1001G - FRF1007G TAIWAN SEMICONDUCTOR Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AB tò RoHS C O M P L IA N C E TI y.'.x /2 4 ii lbl_ im « .KOiZTK Features •<f <<r <f ❖ G lass. p a 6 6 iv a ie d c h ip ju n c tio n . H ig h e ffic ie n c y , L a v ; V F
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FRF1001G
FRF1007G
ITO-220AB
ITO-220AB
MIL-STD-202:
FRF1007G)
1002C
1003G
FRF1007G
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6A SCHOTTKY BARRIER RECTIFIERS
Abstract: 10H150C marking code mow MBRF10H100CT MBRF10H200CT 10H150CT
Text: TAIWAN MBRF10H10QCT - MBRF10H200CT S SEMICONDUCTOR Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO 220AB RoHS COMPLIANCE 12-0«3 Features •S' Plastic nrnteric I used w r f k s Underwriter* Le fccrelory Mir- V C li s iif ic o l o n s i> 4V-0 •> *
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MBRF10H100CT
MBRF10H200CT
220AB
ITO-220AB
MBRF10H1Ã
CT-MBRF10H2Ã
6A SCHOTTKY BARRIER RECTIFIERS
10H150C
marking code mow
MBRF10H200CT
10H150CT
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