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    100 WATTS AUDIO AMPLIFIER Search Results

    100 WATTS AUDIO AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM4665LDX-G Rochester Electronics LLC LM4665 - Single Audio Amplifier Visit Rochester Electronics LLC Buy
    TLC2472ID Rochester Electronics LLC TLC2472 - Audio Amplifier Visit Rochester Electronics LLC Buy
    AV-THLIN2RCAM-005 Amphenol Cables on Demand Amphenol AV-THLIN2RCAM-005 Thin-line Single RCA Coaxial Cable - RCA Male / RCA Male (Coaxial Digital Audio Compatible) 5ft Datasheet
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy

    100 WATTS AUDIO AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MODEL 6552-1A 100 watt Solid State AUDIO AMPLIFIER for conducted audio frequency susceptibility testing posts spaced .75" for standard shielded lead and double plug connections. FEATURES • ■ ■ ■ ■ ■ ■ Solid state. Up to 100 watts output. Wide frequency range.


    Original     		PDF 552-1A 220-1A MIL-STD-461A/462

    Untitled

    Abstract: No abstract text available
    Text: FLAT-PAK SERIES Model FP-PA20A 20 W Audio Power Amplifier ANYWHERE YOU NEED. •           20 Watts RMS Constant Voltage Amplifier 70 V and 100 V Outputs Maximized Audio Level for Output Power Audio Quality Superior to Standard Amplifiers


    Original     		PDF FP-PA20A FP-PA20A! FP-PA20A

    nte181

    Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
    Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per


    Original     		PDF NTE180 NTE181 750mA NTE181MP NTE181 NTE180MCP NEC 08F NTE180 NTE181 power transistor 200w audio power amplifier

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJ4502 High−Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


    Original     		PDF MJ4502 100-Watts MJ802

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJ802 High−Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


    Original     		PDF MJ802 100-Watts MJ4502

    J802

    Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
    Text: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


    Original     		PDF MJ802 MJ4502 r14525 J802/D J802 MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502

    transistor mj4502

    Abstract: MJ4502 MJ4502 MOTOROLA MOTOROLA TRANSISTOR MJ802
    Text: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.


    Original     		PDF MJ4502/D* MJ4502/D transistor mj4502 MJ4502 MJ4502 MOTOROLA MOTOROLA TRANSISTOR MJ802

    MJ4502

    Abstract: MJ802 MJ802 MJ4502
    Text: ON Semiconductort MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


    Original     		PDF MJ4502 MJ802 r14525 MJ4502/D MJ4502 MJ802 MJ802 MJ4502

    MJ802

    Abstract: MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802
    Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.


    Original     		PDF MJ802/D* MJ802/D MJ802 MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802

    MJ4502

    Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
    Text: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.


    Original     		PDF MJ4502 750mA. MJ4502 MJ4502 EQUIVALENT transistor mj4502 A3105

    MJ802

    Abstract: Transistor 358 to3 200 watt audio amplifier with ic high power transistor transistor 9016 npn transistor MJ802
    Text: MJ802 High Power Transistor For use as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 -100 at IC = 7.5A • Excellent Safe Operating Area


    Original     		PDF MJ802 750mA. MJ802 Transistor 358 to3 200 watt audio amplifier with ic high power transistor transistor 9016 npn transistor MJ802

    MJ4502 EQUIVALENT

    Abstract: BU108 BU806 Complement BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A


    Original     		PDF MJ4502 MJ802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ4502 EQUIVALENT BU108 BU806 Complement BDX54 BU326 BU100

    mje253

    Abstract: No abstract text available
    Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS


    Original     		PDF MJE243 MJE253 MJE243/D

    MJE243

    Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
    Text: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS


    Original     		PDF MJE243 MJE253 O-225 MJE243/D MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253G MSD6100

    2222s

    Abstract: 2SA950 2SC2120
    Text: 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 1112SC2120 2SC2120 2SA950 SC-43 2222s 2SA950 2SC2120

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC2120 2SA950 SC-43 2SC2120 2SA950

    2sc 1177

    Abstract: MJ802 MJ4502 Tra 1120 r MJ4502 MJ802
    Text: MJ4502 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER PNP SILICON TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. High DC Current Gain - hFE = 25-100 @ lc ” 7.5 A


    OCR Scan     		PDF MJ4502 MJ802 2sc 1177 MJ802 MJ4502 Tra 1120 r MJ4502 MJ802

    c 3421 transistor

    Abstract: d 3421 transistor J802
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS


    OCR Scan     		PDF 100-Watts MJ4502 c 3421 transistor d 3421 transistor J802

    6550 Tube

    Abstract: TUBE 6550 6550 pentode 6550A triode push-pull circuit 6550 6000 Watt audio amplifier circuit diagram 6550 tubes B799 audioamplifierultralinear
    Text: — PRODUCT INFORMATION — Page 1 4-72 Beam Pentode TUBES FOR AF POWER-AMPLIFIER APPLICATIONS AUDIO POWER OUTPUT UP TO 100 WATTS OUTPUT - 2 TUBES IIM PUSH-PULL 42 WATTS PLATE DISSIPATION The 6550-A is a beam-power pentode primarily designed for use in audio-frequency power-amplifier applications. It


    OCR Scan     		PDF 550-A 550-A B7-99, K-55611-TD379-9 6550 Tube TUBE 6550 6550 pentode 6550A triode push-pull circuit 6550 6000 Watt audio amplifier circuit diagram 6550 tubes B799 audioamplifierultralinear

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J4502 High-Pow er PNP Silicon Ttansistor . . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS • High DC Current Gain — hpE = 2 5 -1 0 0 @ lc = 7.5 A


    OCR Scan     		PDF J4502 100-Watts MJ802

    MJE2801

    Abstract: TRANSISTOR ML5 K 1611 1257 transistor MJE2901 transistor 9005 mje2901 pnp transistor wc MJE2801K MJE2901K k 351 transistor
    Text: MJE2801 SILICON MJE2801K 10 AMPERE POWER TRANSISTORS HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON SO VOLTS 90 WATTS . . . for use as an output device in complementary audio amplifiers up to 35-Watts music power per channel. M JE2801 • High DC Current Gain — hpg = 25-100 @ lc * 3.0 A


    OCR Scan     		PDF MJE2801 MJE2801K 35-Watts MJE2901, MJE2901K MJE2801-Case MJE2801K-Case MJE2801 TRANSISTOR ML5 K 1611 1257 transistor MJE2901 transistor 9005 mje2901 pnp transistor wc MJE2801K MJE2901K k 351 transistor

    MJ4502

    Abstract: MJ802 MJ4502 MJ802
    Text: ÆàMOSPEC HIGH-POWER PNP SILICON TRANSISTOR PNP MJ4502 .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. FEA TU RES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area


    OCR Scan     		PDF 100-Watts 750mA MJ802 MJ4502 MJ802 MJ4502 MJ802

    High-Power NPN Silicon Power Transistor 30A

    Abstract: MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3
    Text: ÆàMOS PEC HIGH-POWER NPN SILICON TRANSISTOR NPN .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area


    OCR Scan     		PDF 100-Watts 750mA MJ4502 High-Power NPN Silicon Power Transistor 30A MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3

    transistor BD 522

    Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD801 BD801 transistor BD 522 BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD802 BD808 BD810