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    100 AMP POWER TRANSISTOR Search Results

    100 AMP POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    100 AMP POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PH1516-100

    Abstract: No abstract text available
    Text: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching


    Original     		PDF PH1516-100 5000pF lN5417 PH1516-100

    ZTX453

    Abstract: No abstract text available
    Text: ZTX452 Not Recommended for New Design Please Use ZTX453 ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain %


    Original     		PDF ZTX452 ZTX453 ZTX453 100ms

    Bvn 10k

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge


    Original     		PDF MIL-PRF-38534 20KHz MSK4358 Bvn 10k

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge


    Original     		PDF MIL-PRF-38534 20KHz MSK4358

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge


    Original     		PDF MIL-PRF-38534 20KHz MSK4358

    LH0041 equivalent

    Abstract: No abstract text available
    Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)


    Original     		PDF MIL-PRF-38534 0041RH RH101 LH0041Replacement 0041RH replace8548-65 0041HRH MSK0041KRH MIL-PRF-38534 LH0041 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)


    Original     		PDF MIL-PRF-38534 0041RH RH101 LH0041Replacement 0041RH LH0041. 0041HRH MSK0041KRH MIL-PRF-38534

    Untitled

    Abstract: No abstract text available
    Text: industrial power transistors 135 SILICON NPN TRANSISTORS 15 Amp TYPE NUMBERS RATED BREAKDOWN VOLTAGES 2N 3055 SOT 9201 SOT 9202 SOT 9203 SOT 9204 SOT 9205 SOT 9206 SOT 9207 SOT 9208 SOT 9209 SOT 9210 Vea 100 55 100 120 140 55 80 100 120 140 40 VeE 60 45


    Original     		PDF 1I111AX

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)


    Original     		PDF MIL-PRF-38534 0041RH RH101 LH0041Replacement 0041RH 0041HRH MIL-PRF-38534 MSK0041KRH

    ZTX453

    Abstract: 80 Amp current 100 volt diode ZTX452
    Text: ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) 0.8 0.6 IC/IB=10 0.4 0.2 0.01 0.1 10


    Original     		PDF ZTX452 ZTX453 150mA, 100MHz ZTX453 80 Amp current 100 volt diode ZTX452

    transistor 1 j42

    Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation


    Original     		PDF UF281 lF281OP transistor 1 j42 transistor j42 nj TRANSISTOR 2L43

    2N3055H

    Abstract: 2N3055H+RCA
    Text: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package


    Original     		PDF 2N3055H O-204AA 2N3055H 2N3055H+RCA

    UF28156

    Abstract: UF2815B L5 mosfet
    Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation


    Original     		PDF UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet

    BC372

    Abstract: ic-250mA CTO-92
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 – SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage


    Original     		PDF BC372 250mA 250mA, 100mA, 100MHz BC372 ic-250mA CTO-92

    Transistor Equivalent list

    Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
    Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation


    Original     		PDF UF2805B 68Dpf 82Opf Transistor Equivalent list "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos

    pulse transformer bv 070

    Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
    Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation


    Original     		PDF UF281 uF261oov 7305OlB2-03 pulse transformer bv 070 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer

    25 ohm semirigid

    Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
    Text: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l


    Original     		PDF UF2840G 1000pF t-500pF 25 ohm semirigid capacitor 50uf UF2840G resistor 1.2k capacitor J 400

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -MARCH 1994 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,„,= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX452 ZTX453 UNIT v CBO 100 120 V VCEO 80 100 V Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF ZTX452 ZTX453 001G35S

    2N6284

    Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage


    OCR Scan     		PDF 2N6283, 2N6284, 2N6286, 2N6287 2N6286 2N6284 2N6283 2N6286 2N6287 16 amp npn darlington power transistors

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FEATURES * * 100 Volt VCE0 Gain of 8k at lc=250mA * lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 100 V Collector-Emitter Voltage


    OCR Scan     		PDF BC372 250mA 001G35S

    TIP127 equivalent

    Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
    Text: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:


    OCR Scan     		PDF TIP125, TIP126, TIP127 TIP120 TIP122 T0-220AB 20fjs, TIP127 equivalent TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent

    TIP120

    Abstract: TIP121 TIP122 TIP125 TIP126 TIP127 TIP127 circuit
    Text: TIP125,126, TIP127 PNP POWER DARLINGTON TRANSISTORS -60 - -100 VOLTS -5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP120, TIP121, TIP122 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features:


    OCR Scan     		PDF TIP120, TIP121, TIP122 TIP125 TIP127 T0-220AB TIP120 TIP121 TIP122 TIP126 TIP127 TIP127 circuit

    pmd10K80

    Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
    Text: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB


    OCR Scan     		PDF PMD10K, pmd10K80 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K

    transistor TT 3043

    Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
    Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device


    OCR Scan     		PDF D67FP5 D67FP D67FP6 D67FP7 transistor TT 3043 tt 3043 al 336 IC TT 3043 d67fp6 aj204 638ak