10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Search Results

10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR3DF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV)
TCR1HF50B	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV)

10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8723 transistor Abstract: potentiometer MOD 534 Widlar Q88-R82 Complementary Darlington Audio Power Amplifier darlington cascode second stage Exceed Perseverance Electronic Industry C1995 LM108 TP-14 Text: Low Voltage Techniques Low Voltage Techniques National Semiconductor Technical Paper 14 December 1978 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Abstract A micropower operational amplifier is described that will operate from a total supply voltage of 1 1V The	Original	LM108 8723 transistor potentiometer MOD 534 Widlar Q88-R82 Complementary Darlington Audio Power Amplifier darlington cascode second stage Exceed Perseverance Electronic Industry C1995 TP-14	PDF
NPN power transistor 15A amperes Abstract: 2N5880 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS Text: 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A	Original	2N5880 2N5882 2N5880 NPN power transistor 15A amperes 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS	PDF
NPN power transistor 15A amperes Abstract: transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31 Text: 2N5884 & 2N5886 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 15A. • Excellent DC current Gain hFE = 20 ~ 100 at IC = 10A.	Original	2N5884 2N5886 NPN power transistor 15A amperes transistor 2N5884 2N5886 COMPLEMENTARY SILICON POWER TRANSISTORS transistor equivalents 2n5884 2N5884 2v31	PDF
MA 78S40 regulator Abstract: 78S40 Switching Voltage Regulator 78s40 ua 78s40 Text: LM78S40 Universal Switching Regulator Subsystem General Description Features The LM78S40 is a monolithic regulator subsystem consisting of all the active building blocks necessary for switching regulator systems. The device consists of a temperature compensated voltage reference, a duty-cycle controllable oscillator with an active current limit circuit, an error amplifier, high	Original	LM78S40 AN-711: 2-Mar-99 5-Aug-2002] MA 78S40 regulator 78S40 Switching Voltage Regulator 78s40 ua 78s40	PDF
78S40 Abstract: 78S40 Switching Voltage Regulator MA 78S40 regulator LM78S40CN Text: LM78S40 Universal Switching Regulator Subsystem General Description Features The LM78S40 is a monolithic regulator subsystem consisting of all the active building blocks necessary for switching regulator systems. The device consists of a temperature compensated voltage reference, a duty-cycle controllable oscillator with an active current limit circuit, an error amplifier, high	Original	LM78S40 5962-8876101EA LM78S40CN AN-711: 1-Sep-2000] 2-Mar99 78S40 78S40 Switching Voltage Regulator MA 78S40 regulator	PDF
pin diagram of ic 4066 Abstract: 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage TIP110 TIP115 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors 5 amp npn darlington power transistors Text: TIP110, TIP115 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. • Collector-emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP110, TIP115. • Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A.	Original	TIP110, TIP115 TIP115. pin diagram of ic 4066 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage TIP110 TIP115 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors 5 amp npn darlington power transistors	PDF
Untitled Abstract: No abstract text available Text: MJE200G NPN , MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	MJE200Gâ MJE210Gâ MJE200/D	PDF
Untitled Abstract: No abstract text available Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	MJE200 MJE210 MJE200/D	PDF
BD790 Abstract: BD792 BD789 BD791 MBR340 MSD6100 Text: MOTOROLA Order this document by BD789/D SEMICONDUCTOR TECHNICAL DATA NPN BD789 BD791* PNP BD790 BD792* Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage —	Original	BD789/D BD789 BD791* BD790 BD792* BD789, BD791, BD792 BD789/D* BD790 BD792 BD789 BD791 MBR340 MSD6100	PDF
bd788 Abstract: 1N5825 BD787 MSD6100 Text: MOTOROLA Order this document by BD787/D SEMICONDUCTOR TECHNICAL DATA NPN BD787 PNP BD788 Complementary Plastic Silicon Power Transistors . . . designed for lower power audio amplifier and low current, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage —	Original	BD787/D* BD787/D bd788 1N5825 BD787 MSD6100	PDF
TIPI42 Abstract: TIP1411 TIP142 TIP147 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TIPI47 Text: ÆàMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCeo sus = 60 V (Min) - TIP140.TIP145 = 80 V (Min) - TIP141.TIP146	OCR Scan	TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 TIP145 TIP146 TIPI42 TIP1411 TIP142 TIP147 TIP147 TIPI47	PDF
BOX54B Abstract: pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp BDX54B NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic M edium -Pow er Com plem entary Silicon Transistors _ BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ Iq = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 1 0 0 mAdc	OCR Scan	BDX53B, BDX53C, O-220AB BDX53B BDX53C BDX54B BDX54C BDX54B BDX53C BOX54B pnp 3223 BDX538 bdx548 BDX53C MOTOROLA High voltage fast switching power transistor pnp NPN bipolar junction transistors max hfe 2000 box54 TRANSISTOR C 3223	PDF
BDW94 Abstract: BDW93 BDW93A BDW93B BDW93C BDW94A BDW94B BDW94C bdw93c applications Text: Ü& MOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDW93 BDW93A BDW93B BDW93C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVCEO sus = 45 V (Min) - BDW93.BDW94	OCR Scan	BDW93 BDW94 BDW93A, BDW94A BDW93B BDW94B BDW93C BDW94C BDW94 BDW93A BDW94A BDW94B BDW94C bdw93c applications	PDF
TIPI22 Abstract: TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note TIP120 TIP122 Text: ÆfcMOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP120 TIP121 TIP122 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - TIP120.TIP125	OCR Scan	TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 TIP121 TIPI22 TIPI20 T1P125 TIPI21 V-I characteristics of TIP122 TIP122T TRANSISTOR tip122 features TIP127 Application Note	PDF

bdx340 Abstract: BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX33B BDX34B BDX34C NPN bipolar junction transistors max hfe 2000 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Com plem entary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B • High DC Current Gain — hFE = 2500 typ. at Iq = 4.0 • Collector-Emitter Sustaining Voltage at 100 mAdc	OCR Scan	BDX33B, BDX33C, 33C/34B, O-220AB BDX33B BDX33C" BDX34B BDX34C bdx340 BDX330 BDX33C LJ e 34b SILICON COMPLEMENTARY transistors darlington 221A-06 BDX34C NPN bipolar junction transistors max hfe 2000	PDF
BOX53C Abstract: BOX53 box54 BDX54 BDX53B BDX53 BDX53A BDX53C BDX54A BDX54B Text: ŒkMOS PEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS NPN BDX53 BDX53A BDX53B BDX53C .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining VoltageVceo<sus = 4 5 V Min) - BDX53.BDX54	OCR Scan	BDX53 BDX54 BDX53A, BDX54A BDX53B BDX54B BDX53C, BDX54C BOX53C BOX53 box54 BDX54 BDX53A BDX53C BDX54A BDX54B	PDF
2N5882 Abstract: N5 npn transistor 2N5880 2N5879 Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 58 79 Com plem entary Silicon H igh-Pow er Transistors 2N 5880* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N5881 C ollector-Em itter Sustaining Voltage —	OCR Scan	2N5879/D 2N5879, 2N5881 2N5880, 2N5882 2N5881 O-204AA N5 npn transistor 2N5880 2N5879	PDF
TIP110 Abstract: TIP111 TIP112 TIP115 TIP116 TIP117 TIP11S tip111.tip116 tipi transistor TIP112 boca Text: PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP110 TIP111 TIP112 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage60 V Min - TIP110.TIP115 CEO(SUS) = 80 V (Min) - TIP111 ,TIP116	OCR Scan	TIP115 TIP111 TIP116 TIP112 TIP117 TIP110 TIP115 TIP116 TIP117 TIP11S tip111.tip116 tipi transistor TIP112 boca	PDF
TIP11S Abstract: TIP112 TIP117 TIP110 TIP111 TIP115 TIP116 tip111.tip116 TIP112T Text: Æâ m o spec PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP110 TIP111 TIP112 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage60 V Min - TIP110.TIP115 CEO(SUS)	OCR Scan	TIP115 TIP111 TIP116 TIP112 TIP117 TIP110 TIP11S TIP117 TIP115 TIP116 tip111.tip116 TIP112T	PDF
100 amp npn darlington power transistors Abstract: PMD19D100 PMD19D80 60 amp npn darlington power transistors PMD18D PMD18D100 PMD18D80 Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD 18D, 19D SERIES 300 WATT 50 AMP CONTINUOUS, 100 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage PM D18D, PM D 19D 80 P M D 1 8 D , P M D 1 9D 10 0 FEATURES • Electrical specifications guaranteed for	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: MJE13004, MJE13005 HARRIS S E n i C O N D S E CT OR File N u m b e r 1 8 4 0 SbE T> m 43Q5271 ÜG4Gflflfl f i d *H AS - 3 5 - I S 4-A SwttchM ajiW Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications	OCR Scan	MJE13004, MJE13005 43Q5271 T0-22QAB MJE13004 MJE13005 0040flc	PDF
13k80 Abstract: No abstract text available Text: SEUTECH CORP SflE D 0 1 3 * 1 ] . 3*1 100 WATT 8 AMP CONTINUOUS, 16 AMP PEAK 00032bS ISET Ö7D PMD 12K, 13K ABSOLUTE MAXIMUM RATINGS SYM BO L PARAMETER FEATURES Collector Emitter Voltage PM D12K, 13K80 PM D12K, 13K100 VcEO Collector Base Voltage PM D12K, 13KB0	OCR Scan	00032bS 13K80 13K100 13KB0 perfo10 0GD32bb	PDF
17K100 Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of	OCR Scan	PMD16K, 17K100 lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K	PDF
e13009 Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and	OCR Scan	MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data	PDF

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10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Search Results

10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Result Highlights (5)

10 AMP NPN POWER TRANSISTORS WITH LOW SATURATION VOLTAGE Datasheets Context Search

8723 transistor

NPN power transistor 15A amperes

NPN power transistor 15A amperes

MA 78S40 regulator

78S40

pin diagram of ic 4066

Untitled

Untitled

BD790

bd788

TIPI42

BOX54B

BDW94

TIPI22

bdx340

BOX53C

2N5882

TIP110

TIP11S

100 amp npn darlington power transistors

Untitled

13k80

17K100

e13009