SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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MSK4357
Abstract: 1000 Amp current diode
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)
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MIL-PRF-38534
25KHz
MSK4357
1000 Amp current diode
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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use igbt for 3 phase induction motor
Abstract: 3 phase brushless 400v
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
use igbt for 3 phase induction motor
3 phase brushless 400v
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10 amp igbt 1000 volt
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
10 amp igbt 1000 volt
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MYXDS1200-10ABS
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements
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MYXDS1200-10ABS
O-257
MYXDS1200-10ABS
silicon carbide
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MYXD30600-10CEN
Abstract: silicon carbide
Text: SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • 6 off high current 10A diodes • High temperature 210°C • HMP solder tinned leads available
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MYXD30600-10CEN
O-258
MYXD30600-10CEN
silicon carbide
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transistor c1417
Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components
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980nm)
100ppb
transistor c1417
TH-C1720-F6
THOMSON ELECTRONIQUES TUBES
c1417
Thomson-CSF semiconductor
c1417 transistor
TH-C1720
Thomson-CSF power laser diode price list
C5520
c5530
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MYXDB0600-10CEN
Abstract: silicon carbide
Text: SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • Higher efficiency • High current 10A • High temperature 210°C
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MYXDB0600-10CEN
MYXDB0600-10CEN
silicon carbide
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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MYXDB0650-10CEN
Abstract: silicon carbide
Text: SiC Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 650V isolation • Higher efficiency • High current 10A • High temperature 210°C
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MYXDB0650-10CEN
MYXDB0650-10CEN
silicon carbide
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MYXD30650-10CEN
Abstract: silicon carbide
Text: SiC Schottky 3 Phase Diode Bridge 650 Volt 10 Amp Hermetic MYXD30650-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 650V isolation • 6 off high current 10A diodes • High temperature 210°C • Higher efficiency
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MYXD30650-10CEN
O-258
MYXD30650-10CEN
silicon carbide
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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mur860 diode
Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N4933
1N4934
1N4935
mur860 diode
MR854 diode
rectifier diode 20 amp 800 volt
50 Amp current 512 volt diode
rectifier diode 4 amp 600 volt
MUR1560 DATA
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200 Amp current 1000 volt diode
Abstract: No abstract text available
Text: 25F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 25A ,VF = 1.30 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter
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00-1200V,
00-1200V
175OC
200 Amp current 1000 volt diode
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process
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OT-23
OD-123+
FM120-M+
BAS40x
FM1200-M+
OT-23
OD-123H
FM120-MH
FM130-MH
FM140-MH
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marking CODE 56
Abstract: marking code pr
Text: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers
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OT-363
OD-123+
FM120-M+
BAT54xxWTHRU
FM1200-M+
OT-363
OD-123H
FM120-MH
FM130-MH
FM140-MH
marking CODE 56
marking code pr
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200 Amp current 1000 volt diode
Abstract: 16f diode
Text: 16F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 16A ,VF = 1.23 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter
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00-1200V,
00-1200V
175OC
200 Amp current 1000 volt diode
16f diode
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200 Amp current 1000 volt diode
Abstract: 60 amp 600 Volt Diode
Text: 12F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 12A ,VF = 1.26 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter
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00-1200V,
00-1200V
144OC
175OC
200 Amp current 1000 volt diode
60 amp 600 Volt Diode
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100 Amp current 800 volt diode
Abstract: 25 Amp 1200 volt diode 200 Amp current 1000 volt diode 206F
Text: 6F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 6A ,VF = 1.1 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix "A" for avalanche 400-1200V O Symbol Parameter Repetitive Peak Reverse Voltage
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00-1200V,
00-1200V
175OC
100 Amp current 800 volt diode
25 Amp 1200 volt diode
200 Amp current 1000 volt diode
206F
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100 Amp current 1000 volt diode
Abstract: 60 amp 600 Volt Diode 70HF 70amp diode Diode 1600V To 220 DO-203AB 100 Amp current 800 volt diode
Text: 70HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 70Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 70HF(R) 70HF(R) -10 -20 Symbol 70HF(R) -40 70HF(R) -60 400
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00-1600V,
70Amp.
140OC
110OC
-1200V
-1600V
DO-203AB
100 Amp current 1000 volt diode
60 amp 600 Volt Diode
70HF
70amp diode
Diode 1600V To 220
DO-203AB
100 Amp current 800 volt diode
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100 Amp current 1000 volt diode
Abstract: 40HF DO-203AB diode 40amp 1400 volt diode
Text: 40HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 40Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 40HF(R) 40HF(R) -10 -20 Symbol Repetitive Peak Reverse Voltage
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00-1600V,
40Amp.
140OC
110OC
-1200V
-1600V
DO-203AB
100 Amp current 1000 volt diode
40HF
DO-203AB
diode 40amp
1400 volt diode
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IT13500
Abstract: 85HF DIODE 1400 VRRM DO-203AB 200 Amp current 1000 volt diode 1400 volt diode
Text: 85HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 85Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter Symbol Repetitive Peak Reverse Voltage VRRM Maximum Average On-State Current
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00-1600V,
85Amp.
-1200V
-1600V
DO-203AB
IT13500
85HF
DIODE 1400 VRRM
DO-203AB
200 Amp current 1000 volt diode
1400 volt diode
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