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    1.B SMD TRANSISTOR Search Results

    1.B SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1.B SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


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    BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65 PDF

    3F smd marking

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion


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    KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 3F smd marking PDF

    SMD TRANSISTOR MARKING 3B

    Abstract: 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR
    Text: Transistors SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion


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    KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 SMD TRANSISTOR MARKING 3B 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR PDF

    Transistors smd 1G

    Abstract: SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j
    Text: Transistors SMD Type NPN Transistor KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 3 1 0.55 For Switching and AF Amplifier Applications


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    KC846A B/KC847A C/KC848A BC846A B/BC847A C/BC848A OT-23 KC846 KC847 KC848 Transistors smd 1G SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j PDF

    bc557 SMD

    Abstract: bc558 SMD bc556 SMD BC557 in smd package CBC557 smd transistor BC557 datasheet BC557 smd PACKAGE smd transistor BC557 SMD BC557 BC557
    Text: BC556,A,B,C BC557,A,B,C BC558,A,B,C PNP Silicon Planar Epitaxial Transistors 1 2 3 TO-92 SMD Package Absolute Maximum Ratings Ta = 25 oC unless specified otherwise SYMBOL BC556 DESCRIPTION VCEO 65 Collector Emitter Voltage V Collector Emmitter Voltage 80


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    BC556 BC557 BC558 BC556 BC557 BC558 30EST 100MHZ 200HZ bc557 SMD bc558 SMD bc556 SMD BC557 in smd package CBC557 smd transistor BC557 datasheet BC557 smd PACKAGE smd transistor BC557 SMD BC557 PDF

    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


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    GaAs 1000 nm Infrared Diode,

    Abstract: dual infrared transistor infrared photo reflector smd transistor nm NM smd transistor NM
    Text: Infrared Products Explanation of Part Number: H I R B 5 2 3 1 - 4 3 D 4 5 6 - C 7 2.Shape distinguish: 1.Infrared products kinds: B: bell round type. R: rectangular type. MIB: miniature bell type. CL: chip SMD type. HIR: infrared emitter. HPD: photo diode.


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    SDA04

    Abstract: No abstract text available
    Text: Surface-mount Power Transistor Array SDA04 Electrical Characteristics External Dimensions SMD-16A V VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22 9 a b Pin 1 8 20.0max ±0.2 19.56 1.4±0.2 IC (A) 1 +0.15


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    SDA04 SMD-16A 10max 60min 100min SDA04 PDF

    SDA03

    Abstract: No abstract text available
    Text: Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 9 a b Pin 1 tf (µs) 0.22 8 20.0max ±0.2 19.56 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05 4.0max RL (Ω)


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    SDA03 SMD-16A 10max 60min 100min SDA03 PDF

    SDA04

    Abstract: 632 ic
    Text: Surface-mount Power Transistor Array SDA04 Electrical Characteristics External Dimensions SMD-16A VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22 9 a b Pin 1 8 20.0max 19.56±0.2 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05


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    SDA04 SMD-16A 10max 60min 100min SDA04 632 ic PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 B NX7002BKMB 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


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    NX7002BKMB DFN1006B-3 OT883B) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 B PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


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    PMZB600UNE DFN1006B-3 OT883B) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench


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    PMZB950UPE DFN1006B-3 OT883B) PDF

    SDA03

    Abstract: No abstract text available
    Text: Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A V VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 9 a b Pin 1 tf (µs) 0.22 8 20.0max 19.56±0.2 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05 4.0max RL (Ω)


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    SDA03 SMD-16A 10max 60min 100min SDA03 PDF

    transistor smd marking BA

    Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
    Text: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    BCW61A/B/C/D OT-23 BCW61B BCW61C BCW61D BCW61A transistor smd marking BA transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b PDF

    smd marking AA

    Abstract: BCW60B BCW60D transistor smd marking AD BCW60A BCW60C smd transistor marking 5K
    Text: Transistors IC SMD Type NPN General Purpose Transistors BCW60A/B/C/D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 NPN epitaxial silicon transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D smd marking AA BCW60B BCW60D transistor smd marking AD BCW60A BCW60C smd transistor marking 5K PDF

    smd code HF transistor

    Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
    Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.


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    71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN PDF

    smd transistor xf

    Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
    Text: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA


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    711062b BLT50 OT223 PINNING-SOT223 MEA222 UEA223 smd transistor xf smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1


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    S201/203/77 PINNING-SOT223 OT223) BDS202/204/78. BDS201/203/77 bfci53T31 OT223. PDF

    transistor smd 12p

    Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
    Text: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band


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    711002b BLT81 OT223 MSC092 MRCQ89 transistor smd 12p transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor transistor ft 960 smd 12p PDF

    TRANSISTOR SMD MARKING CODE 5b

    Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
    Text: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for


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    7110fl2tj BLU86 OT223 OT223 TRANSISTOR SMD MARKING CODE 5b transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR PDF

    pmbfj174

    Abstract: PMBFJ174 to 177 SMD 4B0
    Text: • ^3 3* 1 3 1 D O S H O S b 524 N A PIER P H I L I P S / D I S C R E T E IAPX b?E PMBFJ174 to 177 D J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic m icrom iniature SOT-23 envelopes. They are intended fo r application w ith analogue switches, choppers, commutators etc. using SMD


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    PMBFJ174 OT-23 PMBFJ174 7Z94962 PMBFJ174 to 177 SMD 4B0 PDF

    T79 SMD

    Abstract: BDS949 BDS951 BDS953 BDS955 951 pnp sot223 t7 sot223
    Text: Datasheet statu* Product specification date of issue April 1991 B D S 949/ 951/953/9S5 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended for general


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    BDS949/951/953/9S5 OT223) BDS950/952/954/956. OT223 BDS949 BDS951 BDS953 BDS955 T79 SMD 951 pnp sot223 t7 sot223 PDF

    50L Series CAPACITOR

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK104-50L/S B U K 1 1 4 -5 0 L /S For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface


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    BUK104-50L/S BUK114-50L BUK114-50S BUK114-50L/S 114-50L/S 50L Series CAPACITOR PDF