1 GBT 400 A 1200V Search Results

1 GBT 400 A 1200V Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CLC400A/BPA		Rochester Electronics LLC	CLC400 - OP AMP, WIDEBAND, FAST SETTLING, CURRENT FEEDBACK - Dual marked (5962-8997001PA)
iW1821-11		Renesas Electronics Corporation	1200V AccuSwitch™ AC/DC Digital Primary-Side Converter for Three-Phase Industrial Applications up to 12W
iW1821-00		Renesas Electronics Corporation	1200V AccuSwitch™ AC/DC Digital Primary-Side Converter for Three-Phase Industrial Applications up to 12W
iW1821-01		Renesas Electronics Corporation	1200V AccuSwitch™ AC/DC Digital Primary-Side Converter for Three-Phase Industrial Applications up to 12W

1 GBT 400 A 1200V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Power Module 1200V IGBT Family MG12300D-BN3MM Series 300A Dual IGBT RoHS Features • H igh short circuit capability,self limiting short circuit current • IGBT CHIP 1200V NPT technology • V CE(sat) with positive temperature coefficient • F ast switching and short	Original	PDF	MG12300D-BN3MM E71639 MG12300D-BN3MM
2MBI100S-120 Abstract: 600V 200A igbt MOTOR SPEED CONTROL fuji transistor module IGBT 600V 100A 2MBI100s120 Text: 2MBI100S-120 IGBT Modules IGBT MODULE S series 1200V / 100A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampliﬁer Uninterruptible Power Supply	Original	PDF	2MBI100S-120 2MBI100S-120 600V 200A igbt MOTOR SPEED CONTROL fuji transistor module IGBT 600V 100A 2MBI100s120
ultrafast igbt Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching	Original	PDF	of169 1200-volt CPWR-AN03, ultrafast igbt IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
igd-1-ep Abstract: IGBT 1200V 1 GBT 400 A 1200V IHD 660 Text: IGBT Driver Boards IGBT Treiber control channels interface type V DC average/ peak v ISO V ]GM A size POUT W by for modules mounting mmmm outline ±1,5 ±8 ±8 21 21 23 100107 100107 100*107 cable cable cable up to 1200V up to 1200V up to 1200V 1 1 1	OCR Scan	PDF	sc1700 igd-1-ep IGBT 1200V 1 GBT 400 A 1200V IHD 660
diode c552 Abstract: G0551 IRGDDN200M12 IGBT 200A 1200V G-549 Text: Ife g g jig g i^ B jK e c n n e r IR G D D N 2 0 0 M Î2 iR O R P N g n n M ig "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 1200V *c = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated	OCR Scan	PDF	IRGDDN200M12 IRGRDN200M12 100nH D02G344 diode c552 G0551 IGBT 200A 1200V G-549
IRGTIN075M12 Abstract: diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541 Text: International P r]Rectifier PM1,H' IRGTIN075M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Half-Bridge p i f-o 3 VCE= 1200V 4o— 1\|^ , lc = 7 5 A 5=— -4_ •Rugged Design ■Simple gate-drive ■Switching-Loss Rating includes all “tail"	OCR Scan	PDF	IRGTIN075M12 0D20335 C-545 C-546 554S2 2G33b diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	PDF	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
ITE15F12 Abstract: No abstract text available Text: 5Ü GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315-1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for	OCR Scan	PDF	DS4315-1 ITE15F12/ITE15C12 ITE15X12 Each11 002biÂ 37bfi522 ITE15F12
1MBH05D-120-S06TT Abstract: No abstract text available Text: pa rt y written nor the in any for the way herein neither w hatsoever be is thfc the use purposes for o any w ith o u t of cop ied, property reproduced, m an ufacturin g s h a ll in for m atio n c o n s e n t of Fuji EJectr ic Co. .Llii. used disclosed or	OCR Scan	PDF	1MBH05D-120-S06TT MS5F-4089 June-11-1998 MS5F408Â H04-004-05 July-15-1997 H04-004-06 1M3H05D-120 125cC H04-004-03 1MBH05D-120-S06TT
Untitled Abstract: No abstract text available Text: pa rt y written nor the in any for the way herein neither w hatsoever be is thfc the use purposes for o any w ith o u t of cop ied, property reproduced, m an ufacturin g s h a ll in for m atio n c o n s e n t of Fuji EJectr ic Co. .Llii. used disclosed or	OCR Scan	PDF	MS5F-4089 1MBH05D-120-S06TT June-11-1998 H04-004 H04-004-03
300W HI FI AMPLIFIER Abstract: 300w inverter circuit diagram MT5F12959 6MBP50RU2A120 AC2500 ED-4701 H04-004 HCPL-4504 P611 ALMG Text: This m ateria! and the inform ation herein is the p ro p e rty o f Fuji E le ctric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, o r disclosed in any w ay whatsoever for the use o f any third party nor used fo r the m anufacturing purposes w ithou t the express w ritte n consent o f	OCR Scan	PDF	6MBP50RU2A120 H04-004-07b H04-004-03a 300W HI FI AMPLIFIER 300w inverter circuit diagram MT5F12959 6MBP50RU2A120 AC2500 ED-4701 H04-004 HCPL-4504 P611 ALMG