PC28F256P33
Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read
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Original
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P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KByte
PC28F256P33
JS28F256P33
PC48F
pc28F256P33T
PC28F256P33B
PC28F256p33bf
PC28F256P33TF
DIODE 61 BP
DIODE BP
truth table NOT gate 74
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PDF
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KXPS5
Abstract: KXPS5-1050
Text: PART NUMBER: ±2g Tri-axis Accelerometer Specifications KXPS5-1050 Rev. 3 Sep-2009 Product Description The KXPS5-1050 is a Tri-axis, silicon micromachined accelerometer with a full-scale output range of +/-2g 19.6 m/s/s . The sense element is fabricated using Kionix’s proprietary plasma micromachining process
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KXPS5-1050
Sep-2009
KXPS5-1050
KXPS5
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PDF
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KXSS5-3028
Abstract: LGA36 0x89h KXSS5
Text: PART NUMBER: ±3g Tri-axis Accelerometer Specifications KXSS5-3028 Rev. 2 Dec-2009 Product Description The KXSS5-3028 is a Tri-axis, silicon micromachined accelerometer with a full-scale output range of +/-3g 29.4 m/s/s . The sense element is fabricated using Kionix’s proprietary plasma micromachining process
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KXSS5-3028
Dec-2009
KXSS5-3028
LGA36
0x89h
KXSS5
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PDF
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MT28F256J3
Abstract: intel marking 28f
Text: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks
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Original
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256Mb,
128Mb,
x8/x16
128KB
256Mb)
128Mb)
120ns/25ns
MT28F256J3
intel marking 28f
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PDF
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micron marking code information
Abstract: flash device MARKing intel
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY ADDENDUM FLASH MEMORY MT28F644W18 1.8V Low Voltage, Extended Temperature Refer to MT28F644W18 discrete data sheet Features Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero
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Original
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16-bit)
09005aef80e2de30
MT28F644W30
micron marking code information
flash device MARKing intel
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PDF
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pc28f128p33b
Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
Text: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read
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Original
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P33-65nm
128-Mbit,
64-Mbit
52MHz
256-word
32-KByte
128-KByte
P33-65nm
40Mhz
pc28f128p33b
PC28F128P33
JS28F128P33BF
js28f640p33
pc28f128p33bf60
RC28F128P33
JS28F128P33TF70
JS28F128P33
PC28F128P33T
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PDF
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marking code micron label
Abstract: No abstract text available
Text: 128Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D ADVANCE‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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Original
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128Mb
16Mb/32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
marking code micron label
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PDF
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pc28f00ap33
Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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Original
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
pc28f00ap33
JS28F00AP33BF
JS28F512P33BF
PC28F00BP33EF
PC28F00BP33
JS28F512P33EF
PC28F512P33
JS28F512P33
PC28F00AP33EF
JS28F512
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PDF
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ba 5888 fp
Abstract: md 5408 usb connector CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM Solid state CCIR ca 152 CD 5888 1412D kre 101 2065 md 5408
Text: STPC Atlas Programming Manual Issue 1.0 July 2, 2002 STMicroelectronics 1/639 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other
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PDF
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5102 FBBC
Abstract: south bridge VEGA 8259 Programmable Peripheral Interface x86 series pir chip N3DH ic 555 timer gate drive scr inverter schematic ci ta 8259 8086 mnemonic code
Text: STPC Vega Programming Manual Rev. 2.0 August 2004 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF
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PDF
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FX109
Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency
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Original
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MT28F644W18
MT28F644W30
56-Ball
16-bit)
09005aef8098d2b5
MT28F644W30
FX109
FY108
"NOR Flash" intel 28f
MT28F644W18
FY113
FX113
FW117
fw12
FW118
FY114
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks
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Original
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256Mb,
128Mb,
MT28F256J3â
MT28F128J3,
MT28F640J3,
MT28F320J3
56-Pin
x8/x16
128KB
256Mb)
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PDF
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Untitled
Abstract: No abstract text available
Text: ± 2g Tri-Axis Accelerometer Specifications 36 Thornwood Drive PART NUMBER: KXPS5-2050 Rev 2 September 08 APPROVED BY DATE 8/2/06 Ithaca, NY 14850 PROD. MGR. S. Miller Tel: 607-257-1080 MEMS MGR. S. Adams 8/2/06 Fax: 607-257-1146 ASIC MGR. J. Groves 8/2/06
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Original
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KXPS5-2050
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PDF
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RC28F256P33BF
Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,
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Original
|
P33-65nm)
256-Mbit,
512-Mbit
256M/256M)
105ns
16-word
52MHz
512-word
32-KBcument;
RC28F256P33BF
JS28F256P33
PC28F256P33
pc28F256P33T
RC28F256P33TF
JS28F256P33BF
PC28F256P33TF
pc28f256p33b
PC28F256P33BF
PC48F4400P0TB0E
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PDF
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b857
Abstract: 9a7 aa 6hw8 B-857
Text: Application Note Flash Loader for the eZ80 Evaluation Board AN009402-1101 =L/2* :RUOGZLGH +HDGTXDUWHUV +DPLOWRQ $YHQXH &DPSEHOO &$ 7HOHSKRQH D[ ZZZ]LORJFRP $SSOLFDWLRQ 1RWH )ODVK /RDGHU IRU WKH H= (YDOXDWLRQ %RDUG
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Original
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AN009402-1101
b857
9a7 aa
6hw8
B-857
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PDF
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KXTIA-1006
Abstract: No abstract text available
Text: PART NUMBER: ± 2g / 4g / 8g Tri-axis Digital Accelerometer Specifications KXTIA-1006 Rev. 4 Dec-2012 Product Description The KXTIA is a tri-axis +/-2g, +/-4g or +/-8g silicon micromachined accelerometer with integrated orientation, tap/double tap, and activity detecting algorithms. The sense element is fabricated using
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Original
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KXTIA-1006
Dec-2012
KXTIA-1006
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PDF
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w18 SMD
Abstract: W18 SMD MARKING CODE INTEL flash part MARKING marking code micron label cub smd Flash Controller Micron micron part marking decoder
Text: 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A ADVANCE‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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Original
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16Mb/32Mb/64Mb
09005aef80c9c807
MT28C64432W18A
w18 SMD
W18 SMD MARKING CODE
INTEL flash part MARKING
marking code micron label
cub smd
Flash Controller Micron
micron part marking decoder
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PDF
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marking code micron label
Abstract: INTEL flash part MARKING
Text: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C128516W18/W30D PREVIEW‡‡ MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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Original
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128Mb
16Mb/32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
marking code micron label
INTEL flash part MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I x8/x16 organization One hundred twenty-eight 128KB erase blocks 128Mb • Sixty-four 128KB erase blocks (64Mb) • Thirty-two 128KB erase blocks (32Mb)
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Original
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128Mb,
MT28F128J3,
MT28F640J3,
MT28F320J3
x8/x16
128KB
128Mb)
150ns/25ns
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PDF
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INFINEON "part marking"
Abstract: marking code micron label
Text: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices
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Original
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128Mb
32Mb/64Mb
09005aef80b10a55
MT28C128564W18E
INFINEON "part marking"
marking code micron label
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PDF
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pc28f00ap30
Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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Original
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F512P30
PC28F00AP30TF
pc28f00ap
PC28F512P30BF
PC28F00BP30EF
pc28f00ap30ef
PC28F00AP30BF
JS28F512P30BF
|
PDF
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MT28F256J3
Abstract: MT28F256 Micron Q-Flash memory intel strataflash j3
Text: 256Mb, 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F256J3‡, MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • Two hundred fifty-six 128KB erase blocks 256Mb • One hundred twenty-eight 128KB erase blocks
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Original
|
256Mb,
128Mb,
x8/x16
128KB
256Mb)
128Mb)
120ns/25ns
MT28F256J3
MT28F256
Micron Q-Flash memory
intel strataflash j3
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PDF
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TSOP 48 pin flash gbit
Abstract: JS28F00AP33BF 1FFC000
Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features High performance: TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer
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Original
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P33-65nm
512-Mbit
512-Mbit,
100ns
16-word
52MHz
105ns
512-word
46MByte/s
TSOP 48 pin flash gbit
JS28F00AP33BF
1FFC000
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PDF
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Untitled
Abstract: No abstract text available
Text: LM 49360 LM49360 Mono Class D Audio C odec PMU with Ground Referenced Headphone Am plifiers, Earpiece Driver, Audio DSP, 2 Step-Down DC-DC Converters, and 7 LDO Regulators T ex a s In s t r u m e n t s Literature Number: SN AS501A r/i T e xa s In s t r u m e n t s
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OCR Scan
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LM49360
AS501A
LM49360
169mm
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PDF
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