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    TE Connectivity GA10K3A1012I

    NTC Thermistors DISC-10K @25C 0.1C FROM 0TO70C
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    TE Connectivity GA100K6A1014-2

    NTC Thermistors DISC-100K@25+/-0.2C FROM 0TO70
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    TE Connectivity GA100K6A1014-1

    NTC Thermistors DISC-100K@25+/-0.2C FROM 0TO70
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    TE Connectivity GA100K6A1014-3

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    TE Connectivity GA100K6A91

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    0TO70 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K7A323600M

    Abstract: K7B321825M-QC65 K7A321800M
    Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		K7A323600M K7A321800M 1Mx36 2Mx18 2Mx18-Bit 165FBGA K7A3236 165FBGA K7A323600M K7B321825M-QC65 K7A321800M PDF

    K7M321825M

    Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
    Text: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary


    Original     		K7M323625M K7M321825M 1Mx36 2Mx18 2Mx18-Bit 165FBGA 165FBGA x18/x36 K7M321825M K7M321825M-QC75 K7M323625M K7M323625M-QC75 PDF

    K7N401801B

    Abstract: K7N403601B
    Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


    Original     		K7N403601B K7N401801B 128Kx36 256Kx18 256Kx18-Bit 350mA 290mA 330mA 270mA K7N401801B K7N403601B PDF

    K7B801825B

    Abstract: K7B803625B
    Text: K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 18 . 2001 Preliminary 0.1 Add x32 org part and industrial temperature part


    Original     		K7B803625B K7B801825B 256Kx36 512Kx18 512Kx18-Bit 119BGA 225MHz K7B801825B K7B803625B PDF

    K7N161801A

    Abstract: K7N163601A
    Text: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.


    Original     		K7N163601A K7N161801A 512Kx36 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163601A PDF

    Untitled

    Abstract: No abstract text available
    Text: K7A163608A K7A163208A K7A161808A PRELIMINARY 512Kx36/x32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature


    Original     		K7A163608A K7A163208A K7A161808A 512Kx36/x32 1Mx18 1Mx18-Bit PDF

    K7A161801M

    Abstract: K7A163601M advh
    Text: K7A163601M K7A161801M 512Kx36 & 1Mx18 Synchronous SRAM Document Title 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft Jan. 18. 1999 Preliminary 0.1 1. Update ICC & ISB values. 2. Remove tCYC 117MHz -85


    Original     		K7A163601M K7A161801M 512Kx36 1Mx18 1Mx18-Bit 117MHz 150mA 110mA 130mA K7A161801M K7A163601M advh PDF

    NC-2H

    Abstract: K7B161825A K7B163225A K7B163625A
    Text: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		K7B163625A K7B163225A K7B161825A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit 165FBGA NC-2H K7B161825A K7B163225A K7B163625A PDF

    K7N161801A

    Abstract: K7N163201A K7N163601A
    Text: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		K7N163601A K7N163201A K7N161801A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163201A K7N163601A PDF

    K7A801801B

    Abstract: K7A803201B K7A803601B
    Text: K7A803601B K7A803201B K7A801801B PRELIMINARY 256Kx36 & 256Kx32 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark Initial draft 1. Delete pass- through


    Original     		K7A803601B K7A803201B K7A801801B 256Kx36 256Kx32 512Kx18 512Kx18-Bit K7A801801B K7A803201B K7A803601B PDF

    K7A161801A

    Abstract: K7A163201A K7A163601A
    Text: K7A163601A K7A163201A K7A161801A PRELIMINARY 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial draft 1. Add x32 org and industrial temperature .


    Original     		K7A163601A K7A163201A K7A161801A 512Kx36/32 1Mx18 1Mx18-Bit K7A1636 K7A161801A K7A163201A K7A163601A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608


    OCR Scan     		TC5164 805AJ/AFT/AJS/AFTS-40 805AJ/AFT/AJS/AFTS 32-pin PDF

    DG381AAK

    Abstract: No abstract text available
    Text: Tem ic DG381A/384A/387A/390A Semiconductors CMOS Analog Switches Features Benefits Applications • • • • • Full Rail-to-Rail Analog Signal Range • Minimizes Signal Error • Low Power Dissipation • Low Level Switching Circuits • Programmable Gain Amplifiers


    OCR Scan     		DG381A/384A/387A/390A DG180 PLUS-40pen. DG381A S-52880--Rev. 28-Apr-97 DG381AAK PDF

    Untitled

    Abstract: No abstract text available
    Text: SC11027 Parallel Bus Modem Controller 'V ' SIERRA SEMICONDUCTOR □ D irect interface to SC11016 single chip modem □ Complete "AT" command set in firmware □ □ □ □ Auto power down Built-in UART Direct IBM PC XT bus interface 28-pin DIP or PLCC package


    OCR Scan     		SC11027 28-pin SC11016 SC11016, PDF

    sab80188

    Abstract: SAB 8086 80188 siemens EM 235 cn
    Text: 47E » • SIEMENS B235b05 GG313b4 T « S I E G SIEMENS AKTIENGESELLSCHAF High-lntegration SAB 80188/80188-1 8-Bit Microprocessor Preliminary SAB 80188 8 MHz • Integrated feature set - enhanced SAB 8088-2 CPU - clock generator - 2 independent high-speed DMAchannels


    OCR Scan     		B235b05 GG313b4 16-bit T-49-17-07 fl235bOS SAB80188 fi23SbDS T-49-77-07 sab80188 SAB 8086 80188 siemens EM 235 cn PDF

    Untitled

    Abstract: No abstract text available
    Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,


    OCR Scan     		5C1M40 HY514403B 1AC15-00-MAY94 4b750fi6 HY514403BJ HY514403BU PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)


    OCR Scan     		KM64B261A 160mA 28-SOJ-3QO KM64B261A 144-bit 200mV PDF

    JA723

    Abstract: 723C HA723CN "Precision Voltage Regulator" 0405B LA723CN MA723 0581B ha723 precision voltage regulator
    Text: Product specification Philip« Semiconductor« Linear Product* Precision voltage regulator |iA723/723C PIN CONFIGURATION DESCRIPTION The mA723/ iA 723C is a monolithic precision voltage regulator capable of operation in positive or negative supplies as a series,


    OCR Scan     		iA723/723C uA723 uA723C JA723 723C HA723CN "Precision Voltage Regulator" 0405B LA723CN MA723 0581B ha723 precision voltage regulator PDF

    KM68BV4002

    Abstract: No abstract text available
    Text: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)


    OCR Scan     		KM68BV4002 512Kx KM68BV4002-12 170mA KM68BV4002 KM68BV4002-15 160mA KM68BV4002J 36-SOJ-400 PDF

    scr drive circuit diagram

    Abstract: SCR Gate Drive 3 phase scr drive circuit diagram 400 amp SCR used for welding rectifier scr gate driver ic 600 A SCR firing converter circuit SCR gate drive circuit 5600 uF 1600 V scr drive circuit scr driving
    Text: T e m ic SÌ9143 S e m i c o n d u c t o r s Current Sharing Controller for High Performance Processors Features • • • • • • Automatic True Current Sharing with Parallel Converters External SCR Drive for Fault Protection Over-Voltage Protection


    OCR Scan     		S-55362â 03-Nov-97 si9143 scr drive circuit diagram SCR Gate Drive 3 phase scr drive circuit diagram 400 amp SCR used for welding rectifier scr gate driver ic 600 A SCR firing converter circuit SCR gate drive circuit 5600 uF 1600 V scr drive circuit scr driving PDF

    RS-464

    Abstract: Teltone M-982 circuit diagram of calling bell 22-PIN M-982 T354 Call Progress Tone generator
    Text: tC e l x c d n e call p r o g r e s s t o n e RECEIVERS & TRANSMITTERS M -982 Precise Call Progress Tone Delector The Teltone M-982 is an integrated circuit precise tone detector for special purpose use in automatic following of switched telephone calls. The circuit uses low-power CMOS


    OCR Scan     		M-982 22-pin 0to70Â Vss-22 M-982. 22121-20th RS-464 Teltone M-982 circuit diagram of calling bell T354 Call Progress Tone generator PDF

    ic tba 220

    Abstract: km6161002j KM6161002-17
    Text: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM6161002 KM6161002J-15: 230mA KM6161002J-17: 220mA KM6161002J-20: 210mA KM6161002J: 44-Pin Q0177DS ic tba 220 km6161002j KM6161002-17 PDF

    TMP68301

    Abstract: 301-AK-2 TLCS-68000 TMP68301AKF-8 TMP68301AKFR-8 TMP68HC000 68HC000 TMP6830 TMP68301A TMP68301AK
    Text: TOSHIBA TMP68301AK Part 3. TMP68301AKF-8 TMP68301AKFR-8 1. Introduction The TMP68301AK uses the 68HC000, the CMOS version of the 68000, as its core processor. The TMP68301AK includes a serial interface, p arallel interface, tim er, and in te rru p t controller. The


    OCR Scan     		TMP68301AK TMP68301AKF-8 TMP68301AKFR-8 TMP68301AK 68HC000, TMP68301AK. 68HC000 32-bit TMP68301 301-AK-2 TLCS-68000 TMP68301AKFR-8 TMP68HC000 68HC000 TMP6830 TMP68301A PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­


    OCR Scan     		bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year PDF