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    Banner Engineering Corp SLSCP30-900Q55NT

    EZS PAIR 30MMODSX900MM 5 PIN NO
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    DigiKey SLSCP30-900Q55NT Box 1
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    Mouser Electronics SLSCP30-900Q55NT
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    Banner Engineering Corp SLSCP30-600Q55NT

    SLS CASCADE PAIR (STAND ALONE OR
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    DigiKey SLSCP30-600Q55NT Box 1
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    Mouser Electronics SLSCP30-600Q55NT
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    Banner Engineering Corp SLSCP30-1800Q55NT

    LIGHT CURTAIN HAND/ARM 30MM
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    DigiKey SLSCP30-1800Q55NT Box 1
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    Banner Engineering Corp SLSCP30-1200Q55NT

    SLSCP30-1200Q55NT EZS PAIR 30MMO
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    DigiKey SLSCP30-1200Q55NT Box 1
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    Mouser Electronics SLSCP30-1200Q55NT
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    Banner Engineering Corp SLSCP30-1500Q55NT

    SLS CASCADE PAIR; ; 30 MM RESOLU
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    DigiKey SLSCP30-1500Q55NT Box 1
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    Mouser Electronics SLSCP30-1500Q55NT
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    0Q55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HBT 01 - 01G

    Abstract: DG20
    Text: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]


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    MSC23T/PV2720A-XXBS9 152-Word 72-Bit MSC23T/DV2720A-xxBS9 16-Mb 168-pin 72-bit HBT 01 - 01G DG20 PDF

    tc 97101

    Abstract: D472
    Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out


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    MT9LD272 MT18LD472 168-pin, 048-cycle T18LCW tc 97101 D472 PDF

    ks9241

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS INTEGRATED CIRCUIT KS9241B CD-ROM DECODER 80 —QFP —1420C The KS9241B is a CD-ROM Decoder LSI for Real Time Data Decoding and Host Interface. It Is Suitable for CD-ROM Driver, CD-1 Players. FEATURES • • • • • • Corresponds to CD-ROM Mode 1 and CD-I (Mode 2) Formats.


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    KS9241B 1420C KS9241B 80-QFP-1420C b4142 0025b75 ks9241 PDF

    DM-48

    Abstract: WJ 73 1113M NPHT DM4-S
    Text: PRELIMINARY M IC R O N 1 MT18LD472 X 4 MEG x 72 DRAM MODULE DRAM MODULE 4 MEG x 72 32 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JE D E C -stan d ard ECC p in o u t in a 168-pin, du al-in -lin e m e m o ry m o d u le (DIM M )


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    MT18LD472 168-pin, 048-cycle DM-48 WJ 73 1113M NPHT DM4-S PDF

    CSB512

    Abstract: TC8830AF 3si1 tc8830 AN 15525
    Text: D Q S 4 tm TOS H IB A 1. =114 « T O S B UC/UP TC8830AF-1 h ^z »• GENERAL The TC8830AF is a single chip CMOS LSI for voice recording / playback using the ADM ( Adaptive Delta Modulation ). I t composes a voice recording system with a static RAM for voice


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    cim724ti TC8830AF-1 TC8830AF 64Kbit, 256Kbit. 67-4-BS) TC8830AF-69 25MAX TC8830AF-70 citH724cà CSB512 3si1 tc8830 AN 15525 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23T/D4720A-xxBS18 4,194,304-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D4720A-xxBS18 is a fully decoded 4,194,304-word x 72-bit CMOS Dynamic Random Access Memory Module composed of eighteen 16-Mb DRAMs 4M x 4 in TSOP or SOJ


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    MSC23T/D4720A-xxBS18 304-Word 72-Bit MSC23T/D4720A-xxBS18 16-Mb 168-pin 72-bit PDF

    LM27555

    Abstract: No abstract text available
    Text: N EC MOS INTEGRATED CIRCUIT MC-421000A8,421000A9 SERIES 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C - 4 2 1 0 0 0 A 8 is a 1 0 4 8 5 7 6 w o r d s b y 8 b its d y n a m ic R A M m o d u le o n w h ic h 2 p ie c e s o f * M D R A M


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    MC-421000A8 421000A9 bHH752S 0Q55705 MC-421000A8, M30B-100A5-2 ME7525 005570b LM27555 PDF

    DM50P

    Abstract: No abstract text available
    Text: PRELIMINARY I^ IC R D N 1 MEG DRAM M ODULE MT4LD T 164(X) 64 DRAM MODULE X 1 M EG x 64 8 MEGABYTE, 3.3' 8 MEGABYTE’ a3V’ FASTPAGE0R EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process


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    168-pin, 024-cycle DM50P PDF

    RG307

    Abstract: RG-307 K3050 116-RG307 b1590 305-0042 626-70 M49142 49142
    Text: RED INDICATES ORIGINAL MTA a V fT A M l IN T H IS _ _ nOFBIETARY TO W U LH & E C T I» Z tS D C . MC SHALL NOT BE OISCLDSH . OPIED R USD □ASH CONNECTOR NO TYPE A INCH .005 .030 .096 .109 .140 .156 .172 .218 .221 .281 .284 .297 .437 .500 .505 .510


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    310-QQ02/5\-29 0Q55/6\ 3-Q043/5\-29~ 3-001B/5\- RG307 RG307 MIL-C-49142 RG-307 K3050 116-RG307 b1590 305-0042 626-70 M49142 49142 PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 1152 Megabit CMOS DRAM MICROSYSTEMS DP3D16MS72PKW5 ADVANCED INFORMATION D ESCRIPTIO N : The DP3D16MS72PKW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks


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    DP3D16MS72PKW5 DP3D16MS72PKW5 168-pin 30A160-10 30A16CM0 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI cCONTROL / DRIVER IC> M54125L/P EARTH LEAKAGE CURRENT DETECTOR DESCRIPTION The M54125 is a semiconductor integrated circuit consisting of an amplifier for high-speed earth leakage circuit breaker. PIN CONFIGURATION TOP VIEW pT Capacitor Output OUT


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    M54125L/P M54125 T5M4V4800J 4194304-BIT 524288-WORD QQ2S322 M5M4V4260J 262144-WORD 16-BIT) PDF

    SCC2691AC1N24

    Abstract: diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312
    Text: S'îE D NAPC/ SIGNETICS Signetics bbS3T24 GDSSIST 1 .7=7Sr-37-ar SCC2691 Universal Asynchronous Receiver/Transmitter UART Product Specification Communications and Industrial Products Group c PIN CONFIGURATIONS DESCRIPTION FEATURES The Signetics SCC2691 Universal Asyn­


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    SCC2691 7sr-37-aT SCC2691 24-pin SCC2691AC1N24 diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312 PDF

    3Q28

    Abstract: No abstract text available
    Text: •43 Y U N D I I I - • / 8 M X 6 4 B IT S D R A M S O D IM M Z -S E R IE S based on 8Mx8 SDRAM, LVTTL, 2/4-Banks & 4K/8K-Refresh HYM7V84800/ HYM7V64801/ HYM7V6483Q/ HYM7V64831 D ES C R IPTIO N The HYM7V64800/ 64801/ 64830/ 64831 Z-Series are high speed 3.3-Volt synchronous dynamic RAM


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    HYM7V84800/ HYM7V64801/ HYM7V6483Q/ HYM7V64831 HYM7V64800/ 54-pin 144-pin 0022nF 059t/-0 3Q28 PDF

    tcl 2027

    Abstract: tad 2032 PA1310 5sd4
    Text: Section 20 Electrical Characteristics 20.1 Absolute Maximum Ratings Table 20.1 Absolute Maximum Ratings Item Symbol Rating Unit Power supply voltage v cc -0.3 to +7.0 V Program voltage Vpp -0.3 to +13.5 V Input voltage except port C Vin —0.3 to Vqq + 0.3


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    44Th2D4 tcl 2027 tad 2032 PA1310 5sd4 PDF

    h995

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 1 M T9LD 272 B N , M T18LD 472 B(N) 2, 4 MEG X 72 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line m em ory m odule (DIMM)


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    T18LD 168-pin, 048-cvcle MT9LD272 MT18LD472 MT1BLD472 h995 PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0025751 20b « A P X BZV90 SERIES b?E D N AI1ER PHILIPS/DISCRETE _ J V SILICON PLANAR VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes, in a SOT223 plastic envelope, intended fo r stabilization applica­ tions in thick and th in -film circuits.


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    bb53T31 BZV90 OT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 wor/js by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.


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    MC-42S1000LAD32S 32-BIT 42S18160L) 0Q557bl b427S25 PDF

    dual tracking power supply

    Abstract: CA3094T thermistor ntc 180m CA3094 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A
    Text: M3DES71 H A OGSSTTD R R T33 • H AS I S C * A S E M I C O N D U C T O R M 'I f i Q d M Programmable Power Switch/Amplifier for Control and General Purpose Applications April 1994 Features Description • • • • • The CA3094 is a differential input power control switch/


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    M3DES71 CA3094T, CA3094AT, CA3094BT, AN6048 AN6048. CA3094 dual tracking power supply CA3094T thermistor ntc 180m 0MA810 AN6048 transistor 2sc 1014 P-8609 CA3080 CA3094A PDF

    dlp 445 nm

    Abstract: BYV74F M1982
    Text: D E VE LO PM EN T DATA BYV74F SERIES This data sheet contains advance in fo rm a tio n and specifications are subject to change w ith o u t notice. N AMER PHILIPS/DISCRETE SSE D • bbS3T31 0022fc.m 5 ■ ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES


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    BYV74F bbS3T31 OT-199 M0802 YV74h T-03-19 M2881 M2882 M3091 dlp 445 nm M1982 PDF

    SLE 4404

    Abstract: Siemens SLE SLE4404C 416B GTM05366 SLE4404M2
    Text: SIEM EN S Intelligent 416-Bit EEPROM with Internal PIN Check S L E 4404 Features • 416 x 1 bit organization • 208-bit user memory which can be configured as ROM , P R O M , read-protected P R O M and read-protected RO M • User memory protected by means of a changeable user


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    416-Bit 208-bit 235b05 58max GTM05366 E35b05 110x110 fl23Sb05 DDSSb57 SLE 4404 Siemens SLE SLE4404C 416B GTM05366 SLE4404M2 PDF

    D1875

    Abstract: signetics 2692 D1875 transistor diagram remote control receiver and transmitter SCC2692 SCC2692AA1F28 SCC2692AA1F40 SCC2692AA1N40 SCC2692AC1F28 SCC2692AC1F40
    Text: N A P C / 'S I G N E T I C S ETE D • bbS3TE4 GGSSQT3 S 7 ^ 7 s :- 3 7 - o ir Signetics SCC2692 Dual Asynchronous Receiver/ Transmitter DUART Product Specification Microprocessor Division DESCRIPTION The Signetics SCC2692 Dual Universal Asynchronous Receiver/Transmitter (DU­


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    75-37-OS SCC2692 SCC2692 T-75-37-05 150pF D1875 signetics 2692 D1875 transistor diagram remote control receiver and transmitter SCC2692AA1F28 SCC2692AA1F40 SCC2692AA1N40 SCC2692AC1F28 SCC2692AC1F40 PDF

    gp516

    Abstract: GP514
    Text: 17E D 3075001 0G2535b h U Radiation-Hardened Hlgh-Rellability ICs G E SOLID STATE GP514/1RZ Advance Information T - S 2 - 1 3 - S High-Reliability, Radiation-Hardened CMOS/SOS Double-Address Select Unit Aerospace C lass S Screening Features: • M ultiplexes two seq uencer output fields


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    0G2535b GP514/1RZ 64-lead GP514, 100//A gp516 GP514 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23T/D1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The O K I MSC23T/D1720C-xxBS18 is a fu lly decoded 1,048,576-word x 72-bit C M O S Dynam ic Random Access M em ory M odule composed of eighteen 4-Mb D R A M s 1M x 4 in T SO P or SO J


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    MSC23T/D1720C-XXBS18 576-Word 72-Bit MSC23T/D1720C-xxBS18 168-pin 72-bit MSC23T1720C-xxBS MSC23D1720C-xxBS18 PDF

    511000B/BL-60

    Abstract: hyb 511
    Text: SIEMENS 1 M x 1-Bit Dynamic RAM Low Power 1 M x 1-Bit Dynamic RAM HYB 5110OOB/BJ/BZ-60/-70/-80 HYB 511000BUBJL/BZL-60/-70 Advanced Information • 1 048 576 words by 1-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 511000B/BL-60


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    5110OOB/BJ/BZ-60/-70/-80 511000BUBJL/BZL-60/-70 511000B/BL-60) 511000B/BL-70) 511000B-80) 511000B/BL-60 hyb 511 PDF