1RFZ34
Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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5S452
0Q1577Ö
IRFZ34
O-220
S5452
1RFZ34
STM TO-220 marking
IRFZ34
IRFZ34 international
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transistor code 458 055
Abstract: ha2-2620 HA7-2620
Text: HARRIS SENICOND SECTOR h a r r is ioe D | 14305271 0Q151S0 7 | HA-2620/22/25 Very Wideband, Uncompensated Operational Amplifiers Features Applications • Gain B an dw id th P ro du ct A y > 5 . 10 0 M H z • V ideo an d R.F. A m plifier
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0Q151S0
HA-2620/22/25
100MHz
500Mfi
150kV/V
HA-2620/2622/2625
HA-2620)
43D5S71
T-90-20
transistor code 458 055
ha2-2620
HA7-2620
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns
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71b4142
0Q151b4
KMM5362000B/BG
110ns
5362000B-7
130ns
KMM5362000B-8
150ns
KMM5362000B-6
cycles/16ms
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Untitled
Abstract: No abstract text available
Text: International to r 4635452 0Q152D2 156 B I N R PD-9.874 IRFI9620G R e c tifie r HEXFET Power MOSFET • • • • • • • INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel
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0Q152D2
IRFI9620G
-200V
O-220
0D1S207
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RZ2731B60W
Abstract: FO-57D
Text: _I l N AMER PHILIPS/DISCRETE □ bE D • _ ^53131 0Q15537 7 RZ2731B60W" T - 3 3 - 5 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,7 to 3,1 GHz.
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0Q15537
RZ2731B60W"
0Q15E
RZ2731B60W
RZ2731B60W
FO-57D
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SENICONDS 43E PLESSEY SEM ICONDUCTORS J> • 37bôS5S 0Q155bl ■= M P L S B : PDSP16318/PDSP16318A COMPLEX ACCUMULATOR T h e P D S P 16318 c o n ta in s tw o in d e p e n d e n t 2 0 -b it A d d e r/S u b tra c to rs c o m b in e d w ith a c c u m u la to r registers
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0Q155bl
16318/PD
6318A
PDSP16318As
PDSP16112A
37bfi522
001240b
T-90-20
28-LEAD
28-PIN
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MN3881S
Abstract: No abstract text available
Text: Panasonic Other MOS LSIs MN3881S PAL-Compatible CCD Video Signal Delay Element • Overview ■ Pin Assignment The MN3881S is a CCD signal delay elem ent for video signal processing applications. It contains such com ponents as a shift reg ister clock VBIASC
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MN3881S
MN3881S
DD15753
OP016-P-0225
00B0000;
40min.
b13SflS2
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 20-BIT BUFFERS IDT54/74FCT16827AT/BT/CT/ET IDT54/74FCT162827AT/BT/CT/ET Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • Common features: T he ID T 5 4 /7 4 F C T 1 6 8 2 7 A T /B T /C T /E T and ID T 54 / 74FCT162827AT/BT/CT/ET 20-bit buffers are built using
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20-BIT
IDT54/74FCT16827AT/BT/CT/ET
IDT54/74FCT162827AT/BT/CT/ET
74FCT162827AT/BT/CT/ET
20-bit
10-bit
IDT54/74FCT16827AT/BT/CT/ET,
162827AT/BT/CT/ET
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mJI 1032
Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
Text: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a
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EN5055
LC382161T-17
LC382161
65536-word
16-bit
50-pin
c17G7b
0D15317
mJI 1032
T522 capacitor
TSOP 50 PIN
ULN 232
V11J
LC382161T-17
TSOP50
5B60
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CY101E383
Abstract: diode SKE 39
Text: W r CY10E383 CY101E383 CYPRESS ECL/TTL/ECL Translator and High-Speed Bus Driver Features Functional Description • B iC M O S for optim um speed/power • H igh speed max. — 2.5 n s Ipu TTL-to-EC L — 3.5 n s tpo EC L-to-TTL The CY10/101E383 is a new-generation
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CY10E383
CY101E383
80-pin
CY10/101E383
CY10E383â
84-Lead
80-Lead
CY101E383
diode SKE 39
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Untitled
Abstract: No abstract text available
Text: w g m HEW LETT mLUM PA C K A R D Isolated 15-bit A/D Converter Technical Data HCPL-7860 HCPL-0870, -7870 Features • 12-bit Linearity • 700 ns Conversion Time Pre-Trigger Mode 2 • 5 Conversion Modes for Resolution/Speed Trade-Off; 12-bit Effective Resolution
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15-bit
HCPL-7860
HCPL-0870,
12-bit
14-bit
th560
HEDL-6561
HEDL-6560
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WD33C93A
Abstract: No abstract text available
Text: | ‘ .i v - r f " - .- j — ‘ * ! T 4 F •— md . - !— S *4E » WESTERN DIGITAL CORP • « m a s s a o o is s a H m « o c T - 3 2 - ^ 3 - ^ 7 / 1 " .' T * WD33C93A » * . " ' / . I '- * # * «1
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WD33C93A
WD33C93A
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Untitled
Abstract: No abstract text available
Text: 64K x 16 Static RAM Module Features Functional Description • High-densitv 1-megabit SRAM module • High-speed CMOS SRAMs — Access time of 15 ns • Low active power — 2.2W max. • SMD technology • TTL-compatible inputs and outputs • Pinout compatible with CYM1611
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CYM1611
CYM1622
1622PV
411-Pin
1622PV
40-Pin
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Untitled
Abstract: No abstract text available
Text: DS2152 PRELIMINARY DALLAS DS2152 Enhanced T1 Single Chip Transceiver se m ic o n d u c to r FEATURES PIN ASSIGNMENT • Complete DS1/ISDN-PRI transceiver functionality • Line interface can handle both long and short haul trunks • 32-bit or 128-bit crystal-less jitter attenuator
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DS2152
32-bit
128-bit
SLC-96R
100-PIN
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7006C
Abstract: TOA8
Text: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB814260A
16-bit
16-bits
MB814260A-70/-80/-10
7006C
TOA8
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Untitled
Abstract: No abstract text available
Text: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.
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HB56G51236CC
288-WordX
36-Bit
512KX36
514900LTT)
88-pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE 256K • • • • • • • • • Fast access times: 4.5,5,5.5,6 and 7ns Fast OE# access time: 4.5,5,5.5 and 6ns +3.3V +0.3V/-0.165V power supply Vcc Separate +2.5V +0.4V/-0.125V isolated output buffer supply (VccQ) 3.3V-tolerant inputs SNOOZE MODE for reduced power standby
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100-lead
160-PIN
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SMT160
Abstract: No abstract text available
Text: ADVANCE M IC R O N 1 MT16D T 164(S), MT16D(T)464 1 MEG, 4 MEG x 64 DRAM MODULES DRAM MODULE 1 MEG, 4 MEG x 64 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,
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MT16D
168-pin,
600mW
024-cycle
128ms
SMT160
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Untitled
Abstract: No abstract text available
Text: Panasonic For Information Equipment MN83876A Liquid Crystal Display Panel Source Driver • Overview The M N 83876A converts digital display data from a per sonal com puter or engineering workstation into analog signal voltages for driving thin-film transistor color LCD panels.
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MN83876A
3876A
GG15441
0Q15442
0G15443
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tc 97101
Abstract: D472
Text: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out
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MT9LD272
MT18LD472
168-pin,
048-cycle
T18LCW
tc 97101
D472
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Untitled
Abstract: No abstract text available
Text: MICRON I MT4LC4M4A1 S 4 MEG X 4 DRAM TECHNOLOGY. INC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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120mW
096-cycle
24/26-Pin
DA-98
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Untitled
Abstract: No abstract text available
Text: HEXFET Power M O S FE T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance MÔ554S2 GG1SS3Ô 303 • INR PD-9.850 IRFIBC20G INTERNATIONAL RECTIFIER bSE D
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554S2
IRFIBC20G
T0-220
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.
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MSM5116190
576-Word
18-Bit
MSM5116190
cycles/64ms
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Untitled
Abstract: No abstract text available
Text: SONY CXK77B3611AGB* High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a
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CXK77B3611AGB*
CXK77B3611AGB-5/6
200MHz
CXK77B3611AGB-5
167MHz
119TBGA
CXK77B3611AGB
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