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    Text: MICRO ELECTRONICS CORP 11E D bCH17 Ôa QQQQ7b ô T M L1121L INFRARED LIGHT EMISSION DEVICE • GaAlAs Si This is the new type of high power and high speed infrared light emission device Dimension: mm • This device maintains nondirectional characteristic


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    PDF bCH17 L1121L 100mA bCH17ê 0Q0G770