Untitled
Abstract: No abstract text available
Text: 37E D Hlgh-Reliability High-Speed CMOS Logic IC s * Dynam ic . • "P 4 S Z 3 - 7 Burn-In Test-Circuit Connections CD54HC/HCT4020 M3G2S71 0G2bG13 1 ■ HAS HARRIS SEMICOND SECTOR CD54HC4020/3A CD54HCT4020/3A Static ■ - (Use S tatic II fo r /3A burn-in and D ynam ic fo r Life Test.
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CD54HC/HCT4020
M3G2S71
0G2bG13
CD54HC4020/3A
CD54HCT4020/3A
2k-47k
CD54HC4024/3A
CD54HCT4024/3A
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Untitled
Abstract: No abstract text available
Text: bEM^flSb 0G2bS0ô • MF1018S-4 FOR DIGITAL MOBILE TELEPHONE, Rx FEATURES This SAW filter for the transmitting RF circuit of d ig ita l m obile c o m m u n ica tio n e q u ip m e n t operating at 940 MHz - 960 MHz. 1. SMD package insures small size, lightweight.
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MF1018S-4
000MHz
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CQ823
Abstract: No abstract text available
Text: 4ÛE5771 0G2bm2 bhS CMOS SyncFlFO 8192X9 FEATURES: • • • • • • • • • • • • 8192 x 9-bit organization Pin/function compatible with IDT72421/722x1 family 15 ns read/write cycle time Read and write clocks can be independent Dual-Ported zero fall-through time architecture
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E5771
IDT72251
8192X9
IDT72421/722x1
32-pin
PUBLICATION95
REGISTRATIONMS-016,
CQ823
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF M7E i • ä23SbGS 0G2bßßS 1 « S I E G RP-13B Mask-Diffused GaAsP Point Source LED SIEM ENS PART NO. 2600-7074 ^99 P-metal anode Diffusion Barrier Epitaxial Layer Substrate N-metal (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS
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23SbGS
RP-13B
-10jiA
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E D • High-Reliabillty High-Speed CMOS Logic ics - ^ LJ3G2271 0G2b053 2 BIHAS SQ|_X] STATE - CD54HC4518/3A CD54HCT 4518/3A ' ^ 4 5 -2 5 -0 5 Burn-In Test-Circuit Connections Static OPEN 3-6,11-14 CD54HC/HCT 4518 Dynamic
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LJ3G2271
0G2b053
CD54HC4518/3A
CD54HCT
4518/3A
CD54HC/HCT
CD54HC/HCT4518
2k-47k
CD54HC4520/3A
CD54HCT4520/3A
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LT 5208
Abstract: No abstract text available
Text: CD54HC4511/3A CD54HCT4511/3A 43D2271 0G2bDMS 3 « H A S 37E D Hlgh-Reliability High-Speed CMOS Logic ICs HARRIS SEMICOND SECTOR BCD-to-7-Segment Latch/Decoder/Driver T q s ^ V 2 .°l The RCA CD54HC4511 and CD54HCT4511 are BCD-to-7segment latch/decoder/drlvers having four address inputs
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43D2271
CD54HC4511/3A
CD54HCT4511/3A
CD54HC4511
CD54HCT4511
54HCT
2k-47k
LT 5208
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Untitled
Abstract: No abstract text available
Text: IDT74FCT163827A/B/C 3.3V CMOS 20-BIT BUFFERS Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 M IC RO N CM O S Technology The FCT163827A/B/C 20-bit buffers are built using ad vanced dual metal CM O S technology. These 20-bit bus drivers provide high-performance bus interface buffering for
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IDT74FCT163827A/B/C
20-BIT
FCT163827A/B/C
20-bit
10bit
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Untitled
Abstract: No abstract text available
Text: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes
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TC518129CPL/CFWL/CFIL-70/80/10
TC518129CPL/CFWL/CFIL-70L/80L/10L
Q02bbl3
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N | e =» b M OPA6Q4 FET-lnput, Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW DISTORTION: 0.0003% at 1kHz • LOW NOISE: 10nVWfiz • PROFESSIONAL AUDIO EQUIPMENT • PCM DAC l/V CONVERTER • HIGH SLEW RATE: 25V/us
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10nVWfiz
20MHz
OPA2604)
OPA604
ZZ182
S-012
17313b5
G02bE15
OPA604
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY ADVANCE INFORMATION S E M I C O N D U C T O R S SL6610 DIRECT CONVERSION FSK DATA RECEIVER Supersedes the October 1994 edition, DS4003 - 1.4 This device is an advanced direct conversion receiver for operation upto470MHz. The design is based on the SL6609A
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SL6610
DS4003
upto470MHz.
SL6609A
-73dBm
282MHz
1200bps,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55257CPI/CFVCSPI/CFn/CTRI-85L/10L SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of
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TC55257CPI/CFVCSPI/CFn/CTRI-85L/10L
TC55257CPI
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Untitled
Abstract: No abstract text available
Text: TOSHIBA UC/UP fciME D • ^ 7 2 ^ DD2b7D4 725 MT0S3 FLOPPY DISK CONTROLLER 11 TC8566AF F lo p p y D is k C ontroller 1. INTRODUCTION TC8566AF is a single chip LSI for Floppy Disk controller which has VFO and other circuits with FDC chip for interfacing a processor to floppy
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TC8566AF
TC8566AF
TC8565AP
16MHz
500Kbps)
250Kbps)
recAF-64
8566AF-65
8566AF-66
QD2b77Ã
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tcxo b31
Abstract: No abstract text available
Text: S i GEC PLESSEY S V M I C O N D U C T O R S PRELIMINARY INFORMATION GP2015 GLOBAL POSITIONING SYSTEM RECEIVER RF FRONT END The GP2015 is a small format RF Front-end for Global Positioning System GPS receivers. Equivalent in performance to the GP2010 but in a TQFP package, this
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GP2015
GP2015
GP2010
42MHz)
GP2021
000MHz
37bflSSE
tcxo b31
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Untitled
Abstract: No abstract text available
Text: w . GEC PLESSEY S E M I C O N D U C T O R S MA838 FAMILY SINGLE PHASE PULSE WIDTH MODULATION WAVEFORM GENERATOR The MA838 PWM generator has been designed to provide waveforms for the control of variable speed AC machines, uninterruptible power supplies and other forms of power
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MA838
MA828
full360Â
37bfi522
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Untitled
Abstract: No abstract text available
Text: — , FUJITSU SEMICONDUCTOR DATA SHEET DS05-10164-3E MEMORY CMOS 1 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB814400D-60/-70 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cell
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DS05-10164-3E
MB814400D-60/-70
MB814400D
024-bits
MB814400D-60
MB814400D-70
MB814400D-60/MB814400D-70
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PM 438 BL
Abstract: HM51W4400BLTT-7
Text: HM51W4400B Series-HM51W4400BL Serios Low Power Version 1,048,576-word X 4-bit Dynamic Random Access Memory. T h e H ita c h i H M 5 1 W 4 4 0 0 B /B L is a C M O S dynamic RAM organized 1,048,576 words x 4 bits. H M 51W 4400B /B L has realized hig h er density,
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HM51W4400B
Series-----------------------HM51W4400BL
576-word
4400B
300-mil
20-pin
HM51W4400BS-6
HM51W4400BS-7
PM 438 BL
HM51W4400BLTT-7
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Untitled
Abstract: No abstract text available
Text: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q
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IRFL9014
OT-223
GD2b44cJ
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Untitled
Abstract: No abstract text available
Text: Bulletin 12088/A International SRectifier sd 2oooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 2100A • Wide current range ■ High voltage ratings up to 1000V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version
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12088/A
DQ-200AB
SD2000C.
SD2000
D-153
4A55452
D-154
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IRLL110
Abstract: No abstract text available
Text: PD 9.869A International Rectifier IRLL110 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V Fast Switching VDSS = 100V
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IRLL110
OT-223
SS452
D02b4bb
IRLL110
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60024 apex
Abstract: 5962-9162101HXX qml-38535 QML-38534 5962-XXXXXZZ MIL-H-38534 MIC-M-38510
Text: DESC PORM 193 SEP 87 D IS T R IB U T IO N S T A T E M E N T A. . u 5 A p p r o v e d l o r p u b l i c r e l e a s e ; d i s t r i b u t i o n i& u n lim it e d •I clDD47Gfl 0D5b32fl bfl3 ■ OfHCt t W — 596Z-E273 G O V I R N M I K T PR IN T IN G 7 4 * . 1 3 9 /4 0 » ! |
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596Z-E273
RD047DA
005b3Efl
QML-38534.
5962-9162101HXX
pa83m/883
TQ0M70Ã
60024 apex
qml-38535
QML-38534
5962-XXXXXZZ
MIL-H-38534
MIC-M-38510
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR 0^' M62445FP DIGITAL SOUND CONTROLLER WITH DYNAMIC BASS BOOST B IX IO T M IL W APPLICATION m © M T O O L L iiB © TO A D O © IM I ® © Û §TT <¿ ( o u t lin e Mini-Compo,Radio cassette etc. FEATURES y J <Dynamic Bass Boost>
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M62445FP
64P6N
64pinQFP
pin29
pin20
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37703M 2AXXXSP.M 37703M 2BXXXSP M37703S1ASP,M37703S1BSP M 3 7 7 0 3 M 2 -X X X S P and SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M 3 7 7 0 3 M 2 A X X X S P is a sin g le -ch ip m icrocom puter d e
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37703M
M37703S1ASP
M37703S1BSP
16-BIT
P80/C
P77/A
P62/R
20/25ns
25mVrms,
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M37700M
Abstract: No abstract text available
Text: MITSUBISHI MICROCOMPUTERS M 37704M 2A XXXFP M37704M2-XXXFP and M37704S1FP are respectively unified into M37704M2AXXXFP and M37704S1AFP. |U |5 Iw iw 7 7 a a 4 S 1 A F P S IN G L E -C H IP 1 6 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION APPLICATION The M37704M2AXXXFP and M37704S1AFP are single-chip
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37704M
M37704M2-XXXFP
M37704S1FP
M37704M2AXXXFP
M37704S1AFP.
M37704S1AFP
80-pin
25mVrms,
M37700M
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40404040H
Abstract: MH51232FRN-10 MH51232FRN-12 MH51232FRN-15
Text: MITSUBISHI LSIs FLASH MEMORY MODULE P c . . * * R tV -* ' , M H 5 1 2 3 2 F R N -1 0 ,-1 2 ,-1 5 1* 16777216-BIT(524288-WORD BY 32-BIT)CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) (Single side] The M itsubishi M H51232FRN are high-speed 1 6 7 7 7 2 1 6 -b it
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MH51232FRN-10
16777216-BIT
524288-WORD
32-BIT
MH51232FRN
512Kx8
40404040H
MH51232FRN-12
MH51232FRN-15
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