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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power • p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package	OCR Scan	PDF	TIM5359-16 MW50670196 0G2242b TIM5359-16

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power • p i d B = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package

OCR Scan

PDF

TIM5359-16 MW50670196 0G2242b TIM5359-16