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    Catalog Datasheet MFG & Type PDF Document Tags

    PC28F00AG18

    Abstract: PC28F512 PC28F256G18F PC28F00AG PC28F00AG18FE PC28F256G18FE pc28f00 2N 8904 PC28F512G18FE PC28F00AG18FF
    Text: 128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory P/N P/N P/N P/N – – – – PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx Features • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V


    Original     		PDF 128Mb, 256Mb, 512Mb, PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx 512-Mbit, 16-word 09005aef8448483a PC28F00AG18 PC28F512 PC28F256G18F PC28F00AG PC28F00AG18FE PC28F256G18FE pc28f00 2N 8904 PC28F512G18FE PC28F00AG18FF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    tms 1035

    Abstract: 74F00 74F153 74HCT4040 ADSP-21020 HN27C256FP-25T spl21k 280257 BY275
    Text: JTAG Downloader 10 The ADSP-21020 has two external memory spaces—data memory which is 40-bits wide and stores data and program memory (which is 48-bits wide and can store instructions and data). After power-on reset, external RAM in the system is uninitialized. You must provide a method of


    Original     		PDF ADSP-21020 40-bits 48-bits MAUNDER90] tms 1035 74F00 74F153 74HCT4040 HN27C256FP-25T spl21k 280257 BY275

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit

    SCSP M18

    Abstract: PF38F 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original     		PDF 512-Mbit 256-Mbit 16-bit 107-ball PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 SCSP M18 PF38F 3098* intel PF38F4050

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256

    14D471

    Abstract: No abstract text available
    Text: User’s Manual 16 M16C/6S1 Group User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF M16C/6S1 M16C/60 R01UH0105EJ0100 14D471

    cs102m

    Abstract: CS-102M BCC37 MA1040 1BT70 27C1024 BSC27 5cs5 rpc01 PD434008ALE-12
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF V850E/MA1 PD703103A PD703105A PD703106A PD703106A PD703107A PD703107A PD70F3107A PD70F3107A U15179JJ2V0AN002 cs102m CS-102M BCC37 MA1040 1BT70 27C1024 BSC27 5cs5 rpc01 PD434008ALE-12

    PF38F4050

    Abstract: PF48F SCSP M18 105-Ball pf38f5060m0y 3098* intel
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original     		PDF 512-Mbit 256-Mbit PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 PF38F5566MMY0C0 105-ball 105-ball PF38F5060M0Y0B0 PF38F4050 PF48F SCSP M18 pf38f5060m0y 3098* intel

    PF38F4060M

    Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901

    H93RN1

    Abstract: 14d471 R5F36S1ED cenelec hd 538 EN 50065-1 SM 933 plc analog pm 8921 ARIB STD-T84
    Text: User’s Manual 16 M16C/6S1 Group User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series Preliminary All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF M16C/6S1 M16C/60 R01UH0105EJ0050 H93RN1 14d471 R5F36S1ED cenelec hd 538 EN 50065-1 SM 933 plc analog pm 8921 ARIB STD-T84

    WP1F

    Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C

    Micron 512MB NOR FLASH

    Abstract: pc28f00 PC28F00AG PC28F00AG18FE PC28F00AG18 PC28F256G18F PC28F512G18FE 2N 8904 PC28F128 strataflash 512 p30
    Text: 128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory P/N P/N P/N P/N – – – – PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx Features • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V


    Original     		PDF 128Mb, 256Mb, 512Mb, PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx 512-Mbit, 16-word 09005aef8448483a Micron 512MB NOR FLASH pc28f00 PC28F00AG PC28F00AG18FE PC28F00AG18 PC28F256G18F PC28F512G18FE 2N 8904 PC28F128 strataflash 512 p30

    JS28F512M29EWL

    Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F512M29EWL JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW

    M29EWH

    Abstract: M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball
    Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read


    Original     		PDF M29EW 128-Mbit, 64-Mbit, 32-Mbit 256-word 128Mbit: 64Mbit: M29EWH M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball

    EP5S

    Abstract: No abstract text available
    Text: User's Manual User's Manual: Hardware M16C/6C Group 16 User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics


    Original     		PDF M16C/6C M16C/60 R01UH0138EJ0210 EP5S

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 11-Apr-2011 PC28F00AM29EWHB JS28F512 JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29

    JS28F512M29

    Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
    Text: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings


    Original     		PDF 512Mb: M29AW 512Mb x8/x16, 100ns 110ns 512-word 128KB/64 09005aef8462ccad/ZIP 09005aef8462cca4 JS28F512M29 M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A

    assembly language programs for dft

    Abstract: ASM21K A21000 ADSP-21000 ADSP21020 ADSP-21020 ADSP21000 ASSEMBLY OF CODE
    Text: Writing & Assembling Source Files 4.1 4 INTRODUCTION Assembly language source files can contain one or more segments of code or data. These files are separately assembled into object code using the ADSP-21000 Family Assembler and are then linked together (using the ADSP-21000 Family Linker) to form a single


    Original     		PDF ADSP-21000 ADSP-21xxx ADSP-21020 ADSP-2106x 00001d 0a3e00000000 assembly language programs for dft ASM21K A21000 ADSP21020 ADSP21000 ASSEMBLY OF CODE

    strataflash 512 p30

    Abstract: strataflash 512 p33 PF38F5060M0Y0C0 strataflash p33 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features „ High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original     		PDF 512-Mbit 256-Mbit 105-ball PF38F5060M0Y0B0 PF38F5070M0Y0B0 PF48F5500M0Y0B0 107-ball strataflash 512 p30 strataflash 512 p33 PF38F5060M0Y0C0 strataflash p33 3098* intel PF38F4050

    motorola 5118 user manual

    Abstract: motorola - 5118 user manual ZENER A29 SOT 23-5 la22 80 pin simm flash programmer 501s43w104mv4e A29 SMD DIODE SMD b14 Flash SIMM 80 programmer zener Diode B23
    Text: 11/1999 Rev 0.213 ª MPC8260 PowerQUICC II ADS UserÕs Manual ª PowerQUICC II is a trademark of Motorola, Inc. Mfax is a trademark of Motorola, Inc. The PowerPC name, the PowerPC logotype, PowerPC 601, PowerPC 603, PowerPC 603e, PowerPC 604, PowerPC 604e, and RS/6000 are trademarks of


    Original     		PDF MPC8260 RS/6000 motorola 5118 user manual motorola - 5118 user manual ZENER A29 SOT 23-5 la22 80 pin simm flash programmer 501s43w104mv4e A29 SMD DIODE SMD b14 Flash SIMM 80 programmer zener Diode B23

    WP1F

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit x32SH x16SB x16/x32 8x10x1 PF48F3000M0Y0QE WP1F