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Catalog Datasheet	MFG & Type	Document Tags	PDF
buk416 Abstract: No abstract text available Text: N AMER PH IL IPS /DI SCRE TE bTE J> bbS3R31 0D3DM45 bOl » A P X Product Specification Philips Semiconductors BUK416-200AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in	OCR Scan	bbS3R31 0D3DM45 BUK416-200AE/BE OT227B BUK416 -200AE BUK416-2OO0E buk416	PDF

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buk416

Abstract: No abstract text available
Text: N AMER PH IL IPS /DI SCRE TE bTE J> bbS3R31 0D3DM45 bOl » A P X Product Specification Philips Semiconductors BUK416-200AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in

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bbS3R31 0D3DM45 BUK416-200AE/BE OT227B BUK416 -200AE BUK416-2OO0E buk416

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