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    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3R31 0D321b2 fl25 • APX Preliminary specification 2 GHz RF power transistor BLT11 — N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation


    OCR Scan     		PDF bbS3R31 0D321b2 BLT11 OT103 BLT11

    transistor SOT103

    Abstract: n 1210 transistor RF POWER TRANSISTOR NPN SOT103 BLT11 MSB037 RF TRANSISTOR 2.5 GHZ s parameter
    Text: bbS3T31 P h ilip s S em icon du ctors 0D321b2 Ô22 • APX Prelim inary specification 2 GHz RF power transistor BLT11 N AMER PHILIPS/DISCRETE D ESCRIPTION NPN bTE » PINNING Silicon p la n a r epitaxial designed for co m m o n emitter class-AB operation in h and h eld radio equ ipm en t at


    OCR Scan     		PDF bbS3T31 DD321bB BLT11 MSB037 OT103. BLT11 transistor SOT103 n 1210 transistor RF POWER TRANSISTOR NPN SOT103 RF TRANSISTOR 2.5 GHZ s parameter