0D221FL3 Search Results
0D221FL3 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features •H ig h power - Pld B = 29.5 dBm at f = 8 GHz • High gain - G-|dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C) |
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S8836A S8836A 0D221fl3 |