LTED SMD
Abstract: 208H XF1406DB
Text: 1. M e c h a n ic a l D im e n s io n a : — 0.51 2 . S ch e m atic: 16 15 o Max — LO O c\i5 o I u u L I I I CMC SEC 40 ^ a J - m il 1 2 -0 .0 5 0 ± 0 .0 0 6 T O'350- ^ 0.050 in a a 0 3 1/1 CD n ro Isolation: 3 6 PRI 7 8 1500Vrm s Turns Ratio: Pins 1 - 2 - 3 : ( l 6 - 1 5 - 14 )= 1 CT:1 CT±2%
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XF1406DB
MIL-STD-202G,
UL94V-0
E151556
485LC
102mm)
1500Vrms
140uH
100KHz
LTED SMD
208H
XF1406DB
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ARB SMD
Abstract: SMD ARB im 327
Text: i . M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : @ 25 *0 Max —C 0 .2 2 0 Max - — 0 .5 0 HIPOT: J I do o L o cm rO o 'd o 0 .0 3 0 — I 0 .0 0 4 0.01 6 PRI Min ~l • 0 .0 5 0 ± 0 .0 0 6 T R RR XFMRS XFOO13B30A
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XFOO13B30A
1500Vac
10KHz
100KHz
-t-125
XF0013B30A
ARB SMD
SMD ARB
im 327
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seci sud
Abstract: XF0013B3
Text: 1. M echan ical Dim ensions: — 0.51 3. E l e c tr ic a l Max — Is o la tio n V o ltage : $ X O CN° jv- o L u T urns ig Ü 0 .0 3 0 — I I— 0 .0 1 6 1500VAC R atio: P ins 1 - 2 - 3 : ( l 6 - 1 5 - 1 4 )= 1 CT:2CT±3% Pins ( 6 - 8 ) : ( 1 1 - 9 ) = 1 :1 ± 3 %
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XF0013B3
D0D0000ZL
1500VAC
l6-15-14)
100KHz
El51356
-H25X
seci sud
XF0013B3
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0D0D00
Abstract: AP9A102A20VC
Text: SSptos AP9A102A • semiconductor 256K x 4 CMOS Static RAM Features • • • • • • • • Write cycles occur when both CE and Write Enable WE are LOW. Data is transferred from the I/O pins to the memory location specified by the 18 address lines.
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AP9A102A
28-pin,
400-mil
A102A-12VC
28-Pin
AP9A102A-12VI
AP9A102A-15VC
0D0D00
AP9A102A20VC
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xf075
Abstract: 208H
Text: 1. M echanical Dimensions: f— 0.51 3. E le ctrica l Specifications: 25°C Isolation Voltage: 2000Vrm s PRI to SEC Max — 1 in o ^ o Turns Ratio: 1:1 ±2% (PRI:SEC) 9Ü o U I n 0.030 — I 0.016 E 0.350 . ^ 10 o ss PRI OCL: 75uH±20% 100KHz 50mV Q: 8 Min
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XF07561B
2000Vrms
100KHz
10KHz
E151556
102mm)
Feb-12-10
xf075
208H
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