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    0B800 Search Results

    0B800 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SIT5347AE-FQ-25E0B80.000000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SIT5349AN-FR-33N0B80.000000 SiTime 60 to 220 MHz, ±50-ppb precision Super-TCXO Datasheet
    SiT5146AI-FA-33N0B8.000000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5147AI-FK-33E0B80.000000 SiTime 60 to 220 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5347AI-FN-33E0B80.000000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SF Impression Pixel

    0B800 Price and Stock

    Raltron Electronics Corporation H130B-8.000-20-2030-EXT-TR

    CRYSTAL 8.0000MHZ 20PF SMD
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    DigiKey H130B-8.000-20-2030-EXT-TR Digi-Reel 3,686 1
    • 1 $0.41
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    H130B-8.000-20-2030-EXT-TR Cut Tape 3,686 1
    • 1 $0.41
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    • 1000 $0.27532
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    Raltron Electronics Corporation H130B-8.000-18-3030-EXT-TR

    CRYSTAL 8.0000MHZ 18PF SMD
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    DigiKey H130B-8.000-18-3030-EXT-TR Digi-Reel 1,239 1
    • 1 $0.48
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    H130B-8.000-18-3030-EXT-TR Cut Tape 1,239 1
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    • 100 $0.355
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    Newark H130B-8.000-18-3030-EXT-TR Cut Tape 5,457 1
    • 1 $0.545
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    • 100 $0.372
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    H130B-8.000-18-3030-EXT-TR Reel 1,000
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    Karl Kruse GmbH & Co KG H130B-8.000-18-3030-EXT-TR 5,000
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    Richardson RFPD H130B-8.000-18-3030-EXT-TR 1
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    Chip1Stop H130B-8.000-18-3030-EXT-TR 5,008
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    ECS International Inc ECS-2200B-800

    XTAL OSC XO 80.0000MHZ HCMOS TTL
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    DigiKey ECS-2200B-800 Tube 91 1
    • 1 $3.3
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    • 10000 $1.9216
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    Avnet Americas ECS-2200B-800 Tube 32 Weeks 1,000
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    Mouser Electronics ECS-2200B-800 860
    • 1 $2.14
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    • 100 $1.74
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    Master Electronics ECS-2200B-800
    • 1 $4.147
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    • 1000 $1.8
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    Schaffner FN2200B-800-99

    LINE FILTER 1.2KVDC 800A CHASSIS
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    DigiKey FN2200B-800-99 Box 1 1
    • 1 $1196.62
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    Mouser Electronics FN2200B-800-99
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    TME FN2200B-800-99 1
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    Sager FN2200B-800-99 1
    • 1 $1243.25
    • 10 $1160.73
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    WeEn Semiconductor Co Ltd TYN30B-800TJ

    TYN30B-800T/TO263/REEL 13" Q1/T1
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    DigiKey TYN30B-800TJ Reel 5,600
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    Avnet Americas TYN30B-800TJ Reel 8 Weeks 5,600
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    Mouser Electronics TYN30B-800TJ
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    • 10000 $0.41
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    Find more 0B800 price and stock on Findchips.com

    0B800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B320AT/B w19b320

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W28J320B/T 16/4M

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


    Original     		PDF W28F321BT/TT 32MBIT W28F321, W28F321

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


    Original     		PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    LH28F320BFHE-PBTL80

    Abstract: AP-007-SW-E
    Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.


    Original     		PDF LH28F320BFHE-PBTL80 LHF32F12 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F320BFHE-PBTL80 AP-007-SW-E

    FY520

    Abstract: FW533 MT28F322D18
    Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


    Original     		PDF MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


    Original     		PDF M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV6402M S29GL128N 110R

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


    Original     		PDF DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking

    LH28F640BFHG-PBTL70A

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A

    LH28F320BFHE-PBTLF1

    Abstract: Flash Memory 32Mbit DQ15DQ0
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F320BFHE-PBTLF1 32Mbit 2Mbitx16) LHF32FF1 EL16X114 LH28F320BFHE-PBTLF1 Flash Memory 32Mbit DQ15DQ0

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


    Original     		PDF DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


    Original     		PDF DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31

    LRS1830

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LRS1830 LRS1830) EL14Z046 LRS1830

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


    Original     		PDF M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000

    0B800

    Abstract: No abstract text available
    Text: m m w to z n kgob vco Surface Mount Inductor Units GO B(VCO ) EULGO B800*? Surface Mount Inductor Units GOB(VCO) Type EULG 0B800 it r a p if f l|i 80 I V . .* .80 90 ¡TM|fO%| IMPANI I00 I T'1~0 X 7 “'J -J h 'J > ár, T T - XièiT' 800M Hz band VCO (Voltage co ntrol oscillators) for


    OCR Scan     		PDF 0B800 0B800

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


    OCR Scan     		PDF Am29DL32xC 16-Bit) 29DL32xC L323C