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    0A8000 Search Results

    0A8000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SiT5146AI-FK-33N0A8.000000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5347AI-FN-33E0A80.000000 SiTime 60 to 220 MHz, ±0.1 to ±0.25 ppm precision Super-TCXO Datasheet
    SIT5147AI-FA-33N0A80.000000 SiTime 60 to 220 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5147AI-FD-33N0A80.000000 SiTime 60 to 220 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5147AI-FD-33E0A80.000000 SiTime 60 to 220 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SF Impression Pixel

    0A8000 Price and Stock

    Raltron Electronics Corporation H130A-8.000-18-2030-EXT-TR

    CRYSTAL 8.0000MHZ 18PF SMD
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    DigiKey H130A-8.000-18-2030-EXT-TR Reel 2,000 1,000
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    Newark H130A-8.000-18-2030-EXT-TR Reel 3,000 1,000
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    H130A-8.000-18-2030-EXT-TR Cut Tape 2,969 1
    • 1 $0.612
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    • 100 $0.417
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    Karl Kruse GmbH & Co KG H130A-8.000-18-2030-EXT-TR 1,000
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    Mercury Electronic Ind Co Ltd QMQF576D25-2.0A-80.000

    XTAL OSC TCXO 80.0000MHZ LVDS
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    DigiKey QMQF576D25-2.0A-80.000 250 3
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    Mercury Electronic Ind Co Ltd QMQF574T33-2.0A-80.000

    XTAL OSC TCXO 80.0000MHZ CMOS
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    DigiKey QMQF574T33-2.0A-80.000 250 3
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    • 1000 $15.55
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    Mercury Electronic Ind Co Ltd QMQF326T25-2.0A-80.000

    XTAL OSC TCXO 80.0000MHZ CMOS
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    DigiKey QMQF326T25-2.0A-80.000 250 3
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    Mercury Electronic Ind Co Ltd QMQF326D25-2.0A-80.000

    XTAL OSC TCXO 80.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QMQF326D25-2.0A-80.000 250 3
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    0A8000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    PDF W19B320AT/B w19b320

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    PDF W28J320B/T 16/4M

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


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    PDF W28F321BT/TT 32MBIT W28F321, W28F321

    82C452

    Abstract: P82C452 82C452A crt controller 6845 MCA Bus 8bit vga controller plasma 640x480 64kx4 DRAM LM339 XR31
    Text: 82C452 Super VGA Graphics Controller Data Sheet September 1991 P R E L I M I N A R Y Copyright Notice Copyright 1990, Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce,


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    PDF 82C452 144-Pin 82C452 P82C452 82C452A crt controller 6845 MCA Bus 8bit vga controller plasma 640x480 64kx4 DRAM LM339 XR31

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    LH28F320BFHE-PBTL80

    Abstract: AP-007-SW-E
    Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.


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    PDF LH28F320BFHE-PBTL80 LHF32F12 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F320BFHE-PBTL80 AP-007-SW-E

    FY520

    Abstract: FW533 MT28F322D18
    Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


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    PDF MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


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    PDF M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT

    schematic diagram cga to vga

    Abstract: cga to vga circuits SCHEMATIC mda VGA CRT MONITOR SCHEMATIC DIAGRAM monochrome TTL sync video CGA to vga SCHEMATIC mda VGA board 82c453 cga to vga hercules PLCC-44 cr16
    Text: 82C453 Ultra VGA Graphics Controller Data Sheet July 1991 Copyright Notice Copyright 1990, 1991 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit, transcribe, store in a retrieval system, or translate into any language or


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    PDF 82C453 160-Pin schematic diagram cga to vga cga to vga circuits SCHEMATIC mda VGA CRT MONITOR SCHEMATIC DIAGRAM monochrome TTL sync video CGA to vga SCHEMATIC mda VGA board 82c453 cga to vga hercules PLCC-44 cr16

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    PDF Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


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    PDF DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking

    LH28F640BFHG-PBTL70A

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    PDF LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A

    LH28F320BFHE-PBTLF1

    Abstract: Flash Memory 32Mbit DQ15DQ0
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    PDF LH28F320BFHE-PBTLF1 32Mbit 2Mbitx16) LHF32FF1 EL16X114 LH28F320BFHE-PBTLF1 Flash Memory 32Mbit DQ15DQ0

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    PDF DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


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    PDF DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31

    LRS1830

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.


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    PDF LRS1830 LRS1830) EL14Z046 LRS1830

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


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    PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    schematic diagram cga to vga

    Abstract: DD11D1D SCHEMATIC mda VGA board cga ega vga RAMDAC DIP BT477 TTL sync video CGA to vga schematic diagram cga to vga circuit convert ega to vga I334 cga to vga
    Text: UM•■ ■■• ■■ ■■ai i v a n i r à 82C453 Ultra VGA Graphics Controller ■ High Performance VRAM VGA optimized for 800x600 and 1024x768, 16 and 256 color, display resolutions interlaced/non-interlaced ■ 4 VRAMs (256Kx4) support all Super VGA


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    PDF 82C453 800x600 1024x768, 256Kx4) 1024x768 160-Pin G011GHD schematic diagram cga to vga DD11D1D SCHEMATIC mda VGA board cga ega vga RAMDAC DIP BT477 TTL sync video CGA to vga schematic diagram cga to vga circuit convert ega to vga I334 cga to vga

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    PDF Am29DL32xC 16-Bit) 29DL32xC L323C