20U20
Abstract: VCH International CMD50640 CMD53640 CMD53641 CMD53642 CMD5364X CMD54643 HLMP-1300 HLMP-1503
Text: DIFFUSED T-IOO SOLID STATE LAMPS 'Tb D 2002040 0GQ11Ö0 CHICAGO MINIATURE BRAND C H I C A G O M_ I N I A T U R E LAMP red yello w HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED 96D 01180 CMD50640 CMD5364X CMD5464X/HLMP-15X3 CMD5764X/HLMP-130X PA C K AG E D IM E N S IO N S
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0G011Ã
CMD50640
CMD5364X
CMD5464X/HLMP-15X3
CMD5764X/HLMP-130X
c1533g
galliu64X
CMD5764X
C1064A
20U20
VCH International
CMD53640
CMD53641
CMD53642
CMD54643
HLMP-1300
HLMP-1503
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Untitled
Abstract: No abstract text available
Text: NEWBRIDGE MICROSYSTEMS CfìUnOS 5flE T> • bSÛSlOl ÜDG1143 hS? » N B M C CA53C80 SCSI INTERFACE CONTROLLER " T - s i- 'b i- z n • Pin and functional compatibility with the industry standard 53C80 • TTL input/output compatibility • Low power CMOS implementation
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DG1143
CA53C80
53C80
CA53C80
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Untitled
Abstract: No abstract text available
Text: 64K x 16 HIGH-SPEED ULTRA-LOW POWER CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ADVAN^ LF1°9^ ATI0N DESCRIPTION • H igh-speed access tim e: 15, 20, 35, and 45 ns • CM O S low pow er operation — 40 mW typical operating — 90 \i\N (typical) standby • T T L com patible interface levels
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44-pin
IS62LV6416LL
576-bit
PK13197K
10Q4404
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y M 5 9 1 6 1 0 SEMICONDUCTOR 16M X S e r ie s 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591610 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5117100 in 24/28 pin SOJ or TSOF-II on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for
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HYM591610
HY5117100
HYM591610M/LM/TM/LTM
HYM591610M/LM
HYMS91610TM/LTM
1BD04-00-MAY93
HYM591610M
HYM591610LM
HYM591610TM
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KT853
Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Text: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE
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6N140ATXV
3N243
3N244
3N245
CNY17/T
CNY17/2
CNY17/3
CNY17/4
3N243TX
3N244TX
KT853
OPB915S10
OH90U
OPI1265
K9000
OP269SLB
OP269SLC
sla 9030
K8102
opi3250
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KT853
Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Text: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4
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3N243
3N244
3N245
3N243TX
3N243R
3N244TX
3N244R
3N245TX
3N245R
KT853
KT853A
OH90U
KT826
K8702
KT850B
KT8150
KT851A
KR8803
kt853a2
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AT22V10-35YI
Abstract: AT22V10-20JI ti 28j AT22V10 AT22V10-15 AT22V10-20 AT22V10L 5962-8753901LX atmel 22v10 AT22V10-30GM
Text: ATMEL ETE CORP 1 Q 7 4 1 7 ? Q0G11E3 Ô • D — AT22V10/L Features • High Speed Programmable Logic Device 15 ns Max Propagation Delay 5V ± 10% Operation • Low Power C M O S Operation 11^1» -15 Sneed C/M 12/15 Teme lcc mA All 90 All Others 55 High Speed
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1Q7417?
AT22V10/L
200mA
AT22V10
AT22V10L
Military/883C
24DW3
AT22V10-35YI
AT22V10-20JI
ti 28j
AT22V10-15
AT22V10-20
5962-8753901LX
atmel 22v10
AT22V10-30GM
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Untitled
Abstract: No abstract text available
Text: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative
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NN51V18160B
16bit
NN51V18160BL
0QQ11CH
NN51V181
128ms
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