0C314
Abstract: 09d4e 074c "04AA9H" 0496B TMS320 05c62 0144dh SPSS011B 0c314h
Text: TMS320 DSP Number 85E DESIGNER’S NOTEBOOK Speech data for German LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get German speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts
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TMS320
TMS320Cxx
06EA6h,
07164h,
03DCFh,
02E34h
073AAh,
0E53Ch,
0D266h,
007ADh,
0C314
09d4e
074c
"04AA9H"
0496B
05c62
0144dh
SPSS011B
0c314h
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mps 1022
Abstract: No abstract text available
Text: MICRO POlilER SYSTEMS INC LIE D L.CH7MM14 0DD47Ö3 TTT « M P S \-5\-iMi MP8796 CMOS Very Low Power 10-Bit Analog-to-Digital Converter Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution
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CH7MM14
0DD47Ã
MP8796
10-Bit
10-Bit
bQT7444
mps 1022
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ESJA52-12A
Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA52-12A
0D047b7
ESJA520DA
HIGH VOLTAGE DIODE 12kv
22VZ
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NJD6513
Abstract: NJD6514 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V NJD6511 NJD6512
Text: NPN TRA NS IST O R ARRAY NJM6511, 6512, 6513, 6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their internal suppression diodes insure freedom from problems associated with inductive
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NJM65Ã
500mA
NJD6511
NJD6512
NJD6513
NJD6514
300mA
200mA
250mA
6512
6513
6514 TRANSISTOR
darlington array
mp 6514
5-30V
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DIODE 914
Abstract: ESJA53-18A GDD4775
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA53-18A
sha11
DQ04773
22367TE
0D0M774
GDD4775
ESJA53-COA
0D0477b
DIODE 914
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Untitled
Abstract: No abstract text available
Text: F eatures □ Serial |i-coded M onolithic M ulti-mode Intelligent Term inal SUMMIT with transceivers using ceramic multi-chip-module technology □ Comprehensive MIL-STD-1553 dual redundant Bus Controller (BC), Remote Terminal (RT), and Monitor Terminal (MT)
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MIL-STD-1553
16-bit
MIL-STD-1553B
QQQ4733
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IBF20
Abstract: IC ST 201A 600PE80
Text: INTERNATIONAL RECTIFIER "4T ß F § 4 Ö S S 4 S a ODD47S4 1 Data Sheet No. PD-3.073 IN T E R N A T I O N A L I“ R R E C T I F I E R 'T'j.s''ÆO 940A RMS Hockey Puk Thyristors 600 PE SERIES Description The 60 0 P E series of converter type hockey puk thyristors use
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ODD47S4
IBF20
IC ST 201A
600PE80
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC V53C316580500 3.3 VOL T 8 M X 8 EDO PA GE MODE CMOS DYNAMIC RAM 40 50 60 Max. RAS Access Time, tRAC 40 ns 50 ns 60 ns Max. Column Address Access Time, (tcM) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tPC) 16 ns 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
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V53C316580500
V53C316580500
cycles/64
32-pin
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Untitled
Abstract: No abstract text available
Text: HV9114 Advanced Information High-Voltage Current-Mode PWM Controller Ordering Information +v„ Min Max Feedback Accuracy Max Duty Cycle 15V 200V ±1.5% 49% 14 Pin Plastic DIP Package Options 14 Pin 14 Pin Ceramic DIP Narrow Body SOIC HV9114P HV9114C HV9114NG
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HV9114
HV9114P
HV9114C
HV9114NG
HV9114X
HV9114
0DD47b2
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 27C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current
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0DG47Ã
27C256
150ns
100nA
-28-pin
-32-pln
S11001D-7
L103SQ1
0DD47afl
27C256
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ECG1236
Abstract: No abstract text available
Text: PHILIPS E C G INC 17 E 0 ECG Sem iconductors • bbSBTSfl Q Q Q H 7 h ? =] ■¡7^77-£ 7-o7 ECG1236 TV Sound System with FM Detector 14 13 Features 12 II 10 9 8 n n n f in n n • Electronic a tte n u a to r replaces conven tio n al vo lu m e control .280" 7-M)
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ECG1236
ECG1236
tbS312fi
1000k
07-d7
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523A7T5
Abstract: No abstract text available
Text: FU JI 2SK2764-01R N-channel MOS-FET FAP-IIS Series 800V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4 fí 4A 80W > Outline Drawing TO-3PF > Applications
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2SK2764-01R
0DD4715
523A7T5
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2766-01R N-channel MOS-FET S tlM s u ltìU K FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2766-01R
80fJS
253fl7TE
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Pin Configuration Description The GD74F257 is a quad 2-input multiplexer with 3-State outputs. Four bits of data from two sources can be selected using a Common Data Selected input. The four outputs present the selected data in true non-inverted form.
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GD74F257
QGGM703
100BSC
300BSC
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Untitled
Abstract: No abstract text available
Text: bq2004H j^ B E N C H M A R Q Fast Charge IC Features General Description >- Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004H Fast Charge IC provides comprehensive fast charge control functions together with high-speed
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bq2004H
150-mil
bq2004
16-pin
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Untitled
Abstract: No abstract text available
Text: Lattice G A L 1 6 L V 8 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from C lock Input to Data Output
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GAL16LV8C)
GAL16LV8D
100ms)
DD047b7
GAL16LV8
GAL16LV8C:
QD47bA
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Untitled
Abstract: No abstract text available
Text: niXYS DSEP 30-04 HiPerFRED Epitaxial Diode Ì fav with soft recovery V rrM trr v” r s m V RR« V V 400 400 30 A 400 V 30 ns TO-247AD Type DSEP 3 0 - 0 4 A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A
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O-247AD
D98004E
D-68623
0DD4733
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po111
Abstract: No abstract text available
Text: MICRO POWER SYSTEMS INC LIE ]> • bDT7444 D004770 331 « M P S - „ 5 -1 -\<2>-\ î> MP8795 CMOS Very Low Power 10-Bit Analog-to-Digital Converter Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • 10-Bit Resolution
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bDT7444
D004770
MP8795
10-Bit
10-Bit
0M78E
po111
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transistor CD 910
Abstract: BFT11 RF2155 BATWING sop-16
Text: RF2155 MICRO »DEVICES 3V PROGRAMMABLE GAIN POWER AMPLIFIER T yp ical A p plicatio ns • Analog Communication Systems Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems 3V Applications • 400MHz Industrial Radios Product Description
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RF2155
900MHz
400MHz
RF2155
915MHz.
8dB15
TD04131
transistor CD 910
BFT11
BATWING sop-16
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Untitled
Abstract: No abstract text available
Text: 54E D SONY • 7-^-y £ - J J. CXK581OOOP/M -12LB 1 f l3 f l2 3 fl 3 □ □ □ 4 7 7 b 7 EJfl M S O N Y 2 131072-word x 8-bit High Speed CMOS Static RAM SO N V C O R P / C O M P O N E N T PRODS Description The CXK581 OOOP/M is a general purpose high speed
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CXK581OOOP/M
-12LB
131072-word
CXK581
240ns
120ns
A3fl23fl3
CXK581000P/M
CXK581OOOP
600mil
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Untitled
Abstract: No abstract text available
Text: MICRON • 4 MEG TECHNOLOur. inc . MICRON T E C H N O L O G Y INC S5E ]> ■ X bill5 ^ MT9D49 9 DRAM MODULE D D 0 4 7 4 7 b37 IMRN 4 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry standard pinout in a 30-pin. single-in-line
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MT9D49
30-pin.
025mW
024-cycle
128ms
MT9D49)
A0-A10
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KR3600
Abstract: KR9602-STD PT 9602 KR9601-STD KR9600-PRO KR9600PRO kr9600
Text: _ 8 5 6 4 6 8 6 STANDARD STANDARD MICROSYSTEMS MICROSYSTEMS Tb De 96 D ñSbMbñb 0004755 04752 D ~ V ù , ~ / 3 'O S ' S | KR9600 KR9601 KR9602 STANDARD MICROSYSTEMS CORPORATION^ MF Keyboard Encoder Read Only Memory KEM PIN C O N FIG U R A TIO N *
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KR9600
KR9601
KR9602
KR3600
KR9602-STD
PT 9602
KR9601-STD
KR9600-PRO
KR9600PRO
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2A1121
Abstract: No abstract text available
Text: LMU12 12 x 12-bit Parallel Multiplier FEATURES DESCRIPTION □ □ □ □ 20 ns Worst-Case Multiply Time Low Power CMOS Technology Replaces TRW MPY012H Two’s Complement, Unsigned, or Mixed Operands □ Three-State Outputs □ Available 100% Screened to
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LMU12
12-bit
MPY012H
L-STD-883,
64-pin
68-pin
LMU12
MPY012H
2A1121
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23C4000
Abstract: ci 0804
Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar
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GM23C4000A
120/150ns.
070-A18
402B757
0DD4775
23C4000
ci 0804
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