NAND02GW3B2C
Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND01G-B2B
NAND02G-B2C
Byte/1056
TSOP48
VFBGA63
NAND02GW3B2C
ST 2gbit NAND
NAND02GR4B2C
NAND01G-B2B
NAND01GW3B2B
NAND01Gr4B2B
NAND01GR3B2B
NAND02G-B2C
NAND01G
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VFBGA63
Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width
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NAND01G-B2B
NAND02G-B2C
byte/1056
TSOP48
VFBGA63
NAND02GW3B2C
NAND01G-B2B
NAND01GR3B2B
NAND01GR4B2B
NAND01GW3B2B
NAND02G-B2C
NAND01G cache program
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HIQUAD64
Abstract: L9803 AM-113 410lsb HIQUAD64 ST st driver regulator automotive HiQUAD-64 HiQUAD-64 st TEC H bridge AD10 IS09141
Text: L9803 Super smart power motor driver with 8-Bit MCU, RAM, EEPROM, ADC, WDG, Timers, PWM and H-bridge driver Features • 6.4-18V Supply Operating Range ■ 16 MHz Maximum Oscillator Frequency ■ 8 MHz Maximum Internal Clock Frequency ■ Oscillator Supervisor
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L9803
HiQUAD64
16-bit
L9803
AM-113
410lsb
HIQUAD64 ST
st driver regulator automotive HiQUAD-64
HiQUAD-64 st
TEC H bridge
AD10
IS09141
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NAND02GW3B2C
Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications
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NAND01G-B2B
NAND02G-B2C
2112-byte/1056-word
TSOP48
NAND02GW3B2C
VFBGA63
NAND01GW3B2B
VFBGA-63
block code error management, verilog
NAND01GR3B2B
NAND01Gr4B2B
NAND02GR4B2C
Numonyx
NAND01G-B2B
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inverter 3kw schematic
Abstract: use igbt for 3 phase induction motor igbt inverter schematic induction 3KW induction motor motor control 3kw mosfet schematic 3kw inverter 3-phase sine commutation motor control three phase motor inverter schematic make three phase inverter 3 phase inverter schematic
Text: STEVAL-IHM009V1 BLDC & AC Motor Control Power board SEMITOP 3 3kW Data Brief Features • Quick to set up, to install and easy to run ■ Inverter stage IGBT short circuit rugged based ■ Design is re-usable the ORCAD source files are available for free
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STEVAL-IHM009V1
inverter 3kw schematic
use igbt for 3 phase induction motor
igbt inverter schematic induction
3KW induction motor
motor control 3kw mosfet schematic
3kw inverter
3-phase sine commutation motor control
three phase motor inverter schematic
make three phase inverter
3 phase inverter schematic
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1kw single phase IGBT inverter CIRCUIT
Abstract: three phase motor inverter schematic use igbt for 3 phase induction motor 1KW 3 phase induction motor igbt inverter schematic induction 3-phase sine commutation motor control BLDC motor control IGBT Schematic INVERTER FOR motor induction 1KW bldc motor STEVAL-IHM008V1
Text: STEVAL-IHM008V1 BLDC & AC motor control Power board SEMITOP 2 1kW Data Brief Features • Quick to set up, to install and easy to run ■ Inverter stage IGBT short circuit rugged based ■ Design is re-usable the ORCAD source files are available for free
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STEVAL-IHM008V1
1kw single phase IGBT inverter CIRCUIT
three phase motor inverter schematic
use igbt for 3 phase induction motor
1KW 3 phase induction motor
igbt inverter schematic induction
3-phase sine commutation motor control
BLDC motor control IGBT
Schematic INVERTER FOR motor induction
1KW bldc motor
STEVAL-IHM008V1
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Untitled
Abstract: No abstract text available
Text: L9803 Super smart power motor driver with 8-Bit MCU, RAM, EEPROM, ADC, WDG, Timers, PWM and H-bridge driver Features • 6.4-18V Supply Operating Range ■ 16 MHz Maximum Oscillator Frequency ■ 8 MHz Maximum Internal Clock Frequency ■ Oscillator Supervisor
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L9803
HiQUAD64
16-bit
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M58BW32FB
Abstract: Q002 PQFP80 M58BW16F M58BW16FT M58BW32F M58BW32FT
Text: M58BW16F M58BW32F 16 or 32 Mbit x32, Boot Block, Burst 3.3V supply Flash memories Preliminary Data Features summary • Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers ■ High performance
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M58BW16F
M58BW32F
75MHz
PQFP80
M58BW32F
M58BW16F
M58BW32FB
Q002
PQFP80
M58BW16FT
M58BW32FT
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Untitled
Abstract: No abstract text available
Text: STEVAL-IHM009V1 BLDC & AC Motor Control Power board SEMITOP 3 3kW Data Brief Features • Quick to set up, to install and easy to run ■ Inverter stage IGBT short circuit rugged based ■ Design is re-usable the ORCAD source files are available for free
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STEVAL-IHM009V1
STG3P3M25N60)
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MGPWG-00007
Abstract: AN2132 AN2118 SMBYT01-400 STLC3075 STN4NF03L STLC3055
Text: AN2132 Application note STLC3075 very low single supply SLIC for WLL application in flyback configuration Introduction The STLC3075 is a SLIC device specially designed for WLL Wireless Local Loop and ISDN terminal adapters. This document contains a description of the device functions in flyback configuration, and
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AN2132
STLC3075
19-Feb-2007
MGPWG-00007
AN2132
AN2118
SMBYT01-400
STN4NF03L
STLC3055
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Untitled
Abstract: No abstract text available
Text: M65KA256AF 256Mbit 4 Banks x 4M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Features • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Supply Voltage – VDD = 1.7 to 1.95V (1.8V typical in
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M65KA256AF
256Mbit
133MHz
256Mbit
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Untitled
Abstract: No abstract text available
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
M58BW32F
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NAND01G-B2B
Abstract: TSOP48 2 NAND01GW3B2B NAND02GW3B2C VFBGA63 NAND01GR3B2B NAND01GR4B2B NAND02G-B2C NAND01GR nand02
Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory Features • High density NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width
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NAND01G-B2B
NAND02G-B2C
2112-byte/1056-word
TSOP48
NAND01G-B2B
TSOP48 2
NAND01GW3B2B
NAND02GW3B2C
VFBGA63
NAND01GR3B2B
NAND01GR4B2B
NAND02G-B2C
NAND01GR
nand02
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Luminosity white Color LED 44-11UTD/TR8 Features ․Package in 12mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process.
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44-11UTD/TR8
DSE-441-002
09-Jun-2006
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F8800h-F8FFFh
Abstract: M58BW32FB
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers High performance – Access times: 45 and 55 ns
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M58BW16F
M58BW32F
M58BW32F
F8800h-F8FFFh
M58BW32FB
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M58BW32FB
Abstract: M58BW32F Q002 M58BW16FB M58BW16F M58BW16FT M58BW32FT PQFP80
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
PQFP80
M58BW32F
M58BW16F
M58BW32FB
Q002
M58BW16FB
M58BW16FT
M58BW32FT
PQFP80
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b9nk60zd
Abstract: p9nk60z N-Channel mosfet 600v 7A P9NK60ZD zener diode 3.0 b2 p9nk MOSFET IGSS 100A zener 600v zener diode 15v st 220 f1
Text: STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET General features Type VDSS RDS on ID Pw STB9NK60ZD 600V <0.95Ω 7A 125W STF9NK60ZD 600V <0.95Ω 7A 30W STP9NK60ZD 600V <0.95Ω 7A 125W
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STB9NK60ZD
STF9NK60ZD
STP9NK60ZD
D2PAK/TO-220FP/TO-220
STF9NK60ZD
O-220FP
O-220
b9nk60zd
p9nk60z
N-Channel mosfet 600v 7A
P9NK60ZD
zener diode 3.0 b2
p9nk
MOSFET IGSS 100A
zener 600v
zener diode 15v
st 220 f1
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F9800h-F9FFFh
Abstract: M58BW32FB
Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers ■ High performance
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M58BW16F
M58BW32F
M58BW32F
F9800h-F9FFFh
M58BW32FB
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VFBGA63
Abstract: No abstract text available
Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width
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NAND01G-B2B
NAND02G-B2C
byte/1056
TSOP48
VFBGA63
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Q002
Abstract: M58BW32FB 8839H 6C000h-6FFFFh M58BW16FT M58BW32F M58BW32FT PQFP80 M58BW16F F9800h-F9FFFh
Text: M58BW16F M58BW32F 16 or 32 Mbit x32, Boot Block, Burst 3.3V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers ■ High performance
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M58BW16F
M58BW32F
75MHz
PQFP80
M58BW32F
M58BW16F
Q002
M58BW32FB
8839H
6C000h-6FFFFh
M58BW16FT
M58BW32FT
PQFP80
F9800h-F9FFFh
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Untitled
Abstract: No abstract text available
Text: M65KA256AF 256Mbit 4 Banks x 4M x 16 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Features • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Supply Voltage – VDD = 1.7 to 1.95V (1.8V typical in
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M65KA256AF
256Mbit
133MHz
256Mbit
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Untitled
Abstract: No abstract text available
Text: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ) s ( ct u d
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STS15N4LLF3
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IDT82V1671AJ
Abstract: idt7164l85l32b IDT71256SA15YGI IDT7164L70L32B IDT7130SA55JG IDTQS3VH257S1 IDT71256L85L32B IDT74FCT163245CPA IDT71256L35YGI IDT71V3578S133PFGI
Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: TB-0512-01 DATE: 16-Dec-2005 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: All IDT Products Shipped in Product Mark
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TB-0512-01
16-Dec-2005
16-Dec-2005
sh5LV919-160J
IDTQS3384PA
IDTQS3VH16212PA
IDTQS3VH257Q
IDTQS5LV919-160JG
IDTQS3384PAG
IDTQS3VH16212PAG
IDT82V1671AJ
idt7164l85l32b
IDT71256SA15YGI
IDT7164L70L32B
IDT7130SA55JG
IDTQS3VH257S1
IDT71256L85L32B
IDT74FCT163245CPA
IDT71256L35YGI
IDT71V3578S133PFGI
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Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 20 LOC AD RE S E RV E D. REV 1S IO N S D I ST 00 p LTR D E S C R 1P T I O N DATE DWN APVD 5 ADDED NOTES
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OCR Scan
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PDF
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09JUN2006
04AUG2006
10AUG2006
6JUN2005
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