Untitled
Abstract: No abstract text available
Text: L6390 High-voltage high/low-side driver Datasheet − production data Features • High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with 1 nF
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L6390
SO-16
DIP-16
L6390
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Untitled
Abstract: No abstract text available
Text: VN808CM-E Octal channel high-side driver Datasheet - production data • Protection against loss of ground • Very low standby current • Compliance to 61000-4-4 IEC test up to 4 kV Description PowerSO-36 Features Type RDS on IOUT VCC VN808CM-E 160 mΩ
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VN808CM-E
PowerSO-36
VN808CM-E
DocID11456
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transistor ST 13003 w, TO-126
Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 transistor ST 13003 w 13003 TRANSISTOR st 13003 TRANSISTOR npn 13003 Transistor NPN Power TO 126 13003 charger E 13003 b TRANSISTOR 78/13003 transistor smps circuit
Text: ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications 1 2 3 • Electronic ballast for fluorescent lighting CFL
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ST13003,
ST13003-K
OT-32
SC06960r
DocID13533
transistor ST 13003 w, TO-126
13003 transistor smps circuit
electronic ballast by transistor 13003
transistor ST 13003 w
13003 TRANSISTOR
st 13003 TRANSISTOR npn
13003 Transistor NPN Power TO 126
13003 charger
E 13003 b TRANSISTOR
78/13003 transistor smps circuit
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Untitled
Abstract: No abstract text available
Text: STGW40NC60W 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ High frequency operation Applications ) s ( ct u d o 2 1 ■ High frequency inverters, UPS ■ Motor drivers ■ HF, SMPS and PFC in both hard switch and
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STGW40NC60W
O-247
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Untitled
Abstract: No abstract text available
Text: STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ IGBT co-packaged with ultra fast free-wheeling diode ■ High frequency operation ) s ( ct u d o 2 1 Applications 3 TO-247 ■ High frequency inverters, UPS
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STGW40NC60WD
O-247
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Untitled
Abstract: No abstract text available
Text: L6390 High-voltage high/low-side driver Datasheet − production data Features • High-voltage rail up to 600 V ■ dV/dt immunity ±50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with 1 nF
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PDF
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L6390
SO-16
DIP-16
L6390
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Untitled
Abstract: No abstract text available
Text: STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ IGBT co-packaged with ultra fast free-wheeling diode ■ High frequency operation 1 Applications 2 3 TO-247 ■ High frequency inverters, UPS
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STGW40NC60WD
O-247
GW40NC60WD
O-24and
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JESD97
Abstract: ST3243E ST3243EB ST3243EC TSSOP28
Text: ST3243EB ST3243EC ± 15 kV ESD protected 3 to 5.5 V, 400 Kbps, RS-232 transceiver with auto power-down Features • ESD protection for RS-232 I/O pins: – ±8 kV IEC 1000-4-2 contact discharge – ±15 kV human body model ■ 1 µA supply current achieved when in auto
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ST3243EB
ST3243EC
RS-232
RS-232
EIA/TIA-232
TSSOP28
Flip-Chip28
ST3243E
JESD97
ST3243EB
ST3243EC
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STGW40NC60WD
Abstract: GW40NC60WD schematic diagram "induction heating" JESD97
Text: STGW40NC60WD 40 A - 600 V - ultra fast IGBT Features • Low CRES / CIES ratio no cross conduction susceptibility ■ IGBT co-packaged with ultra fast free-wheeling diode ■ High frequency operation 2 3 1 Applications TO-247 ■ High frequency inverters, UPS
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STGW40NC60WD
O-247
GW40NC60WD
STGW40NC60WD
GW40NC60WD
schematic diagram "induction heating"
JESD97
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Untitled
Abstract: No abstract text available
Text: VN808CM-E Octal channel high-side driver Datasheet - production data • Protection against loss of ground • Very low standby current • Compliance to 61000-4-4 IEC test up to 4 kV Description PowerSO-36 Features Type RDS on IOUT VCC VN808CM-E 160 mΩ
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VN808CM-E
PowerSO-36
VN808CM-E
DocID11456
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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transistor ST 13003 w, TO-126
Abstract: 13003 transistor smps circuit electronic ballast by transistor 13003 st 13003 TRANSISTOR npn transistor ST 13003 w TR 13003 transistor st 13003 w transistor switch 13003 13003 SMPS 13003 NPN Transistor features
Text: ST13003-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting CFL ■ SMPS for battery charger
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ST13003-K
OT-32
OT-32
transistor ST 13003 w, TO-126
13003 transistor smps circuit
electronic ballast by transistor 13003
st 13003 TRANSISTOR npn
transistor ST 13003 w
TR 13003 transistor
st 13003 w
transistor switch 13003
13003 SMPS
13003 NPN Transistor features
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TAB 429 H
Abstract: VN808CM-E
Text: VN808CM-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-E 160 mΩ 0.7 A 45 V • CMOS compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation
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VN808CM-E
VN808CM-E
PowerSO-36y
TAB 429 H
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switching power supply schematic diagram
Abstract: No abstract text available
Text: VN808CM-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-E 160 mΩ 0.7 A 45 V • CMOS compatible input ■ Junction over-temperature protection ■ Case over-temperature protection for thermal independence of the channels ■ Current limitation
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VN808CM-E
PowerSO-36
switching power supply schematic diagram
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L6390DTR
Abstract: 14493 AN2738 L6390 L6390D L6390N
Text: L6390 High-voltage high and low side driver Features • High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink SO-16 DIP-16 ■ Switching times 75/35 nsec rise/fall with
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L6390
SO-16
DIP-16
L6390
L6390DTR
14493
AN2738
L6390D
L6390N
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123-009
Abstract: 12-23C
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Full Color Chip LED Chip LED with Right Angle Lens 12-23C/R6GHBHC-A01/2C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow
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12-23C/R6GHBHC-A01/2C
12-23C
DSE-123-009
09-Jul-2008
123-009
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st 13003 TRANSISTOR npn
Abstract: 13003 transistor smps circuit TR 13003 transistor transistor ST 13003 w, TO-126 electronic ballast for fluorescent lighting 13003 electronic ballast by transistor 13003 electronic ballast 13003 13003 transistor 13003 NPN Transistor features 13003 SMPS
Text: ST13003-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic ballast for fluorescent lighting CFL
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ST13003-K
OT-32
st 13003 TRANSISTOR npn
13003 transistor smps circuit
TR 13003 transistor
transistor ST 13003 w, TO-126
electronic ballast for fluorescent lighting 13003
electronic ballast by transistor 13003
electronic ballast 13003
13003 transistor
13003 NPN Transistor features
13003 SMPS
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NAND16GW3D2A
Abstract: NAND32GW3D4A
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
NAND16GW3D2A
NAND32GW3D4A
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NAND32G
Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
NAND32G
32-Gbit
nand32
NAND32GW3D4A
JESD97
NAND16GW3D2A
package tsop48
16 GBit flash
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NAND16GW3D2A
Abstract: NAND32GW3D4A NAND08GW3D2A
Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area
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NAND08GW3D2A
NAND16GW3D2A
16-Gbit,
4224-byte
16-Gbi"
NAND16GW3D2A
NAND32GW3D4A
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bad block management in mlc nand
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
bad block management in mlc nand
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Full Color Chip LED Chip LED with Right Angle Lens 12-23C/R6GHBHC-A01/2C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow
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Original
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PDF
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12-23C/R6GHBHC-A01/2C
12-23C
DSE-123-009
09-Jul-2008
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Untitled
Abstract: No abstract text available
Text: VN808CM-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-E 150 mΩ 1A 45 V • VCC/2 compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation
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VN808CM-E
PowerSO-36
VN808CM-E
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Untitled
Abstract: No abstract text available
Text: THIS £ L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC RESERVED. AA DIST R E V I S I O N S 22 LTR DESCRIPTION DATE DWN APVD E COS I 1- 0 0 2 5 - 0 4 26SEP2004 LAM 0K ECO- 0 6 - 0 2 6 6 4 4
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26SEP2004
29NOV2006
ECR-08-0
I2623
09JUL2008
INOV98
11NOV98
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