Untitled
Abstract: No abstract text available
Text: 2STR2215 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits s ct 3
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2STR2215
OT-23
2STR2215
2STR1215.
OT-23
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2STR1215
Abstract: 2STR2215 JESD97
Text: 2STR1215 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■
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2STR1215
OT-23
2002/93/EC
OT-23
2STR1215
2STR2215.
2STR2215
JESD97
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63 ball Vfbga thermal resistance
Abstract: No abstract text available
Text: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached
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D-PAK
Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Text: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W
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STB270N04
STB270N04-1
STP270N04
O-220
STB270N04-1
O-220
D-PAK
P270N04
STP270N04
B270N04
JESD97
STB270N04
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Untitled
Abstract: No abstract text available
Text: ST72682 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI
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ST72682
512-byte
21MB/s
11MB/s
100mA
ST72682/R20
ST72682
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D4NK5
Abstract: P4NK50ZD D4NK50ZD-1 d4nk50zd F4NK50ZD F 25.1 A zener diode D4NK P4NK50Z D4NK50Z *D4NK5
Text: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-CHANNEL 500V - 2.4Ω - 3A - TO-220 /FP- DPAK - IPAK Fast Diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W STF4NK50ZD
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STD4NK50ZD
STD4NK50ZD-1
STF4NK50ZD
STP4NK50ZD
O-220
O-220
D4NK5
P4NK50ZD
D4NK50ZD-1
d4nk50zd
F4NK50ZD
F 25.1 A zener diode
D4NK
P4NK50Z
D4NK50Z
*D4NK5
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Untitled
Abstract: No abstract text available
Text: ST72682 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI
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ST72682
512-byte
21MB/s
11MB/s
100mA
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D4NK5
Abstract: P4NK50Z
Text: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W
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STD4NK50ZD
STD4NK50ZD-1
STF4NK50ZD
STP4NK50ZD
O-220
O-220FP-
STD4NK50ZD
STF4NK50ZD
D4NK5
P4NK50Z
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marking code stmicroelectronics SOT-23
Abstract: 2STR1215 2STR2215 HIGH SPEED SWITCHING NPN SOT23
Text: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits 3 2 1 Applications
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2STR1215
OT-23
OT-23
2STR1215
2STR2215.
marking code stmicroelectronics SOT-23
2STR2215
HIGH SPEED SWITCHING NPN SOT23
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EMIF02-mic01f2
Abstract: Date Code Marking STMicroelectronics STMicroelectronics marking code date AN1235 JESD97 microphone Preamp schematic
Text: EMIF02-MIC01F2 IPAD 2 LINE EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATION • Mobile phones Differential microphone filtering and ESD protection DESCRIPTION The EMIF02-MIC01F2 is a highly integrated device designed to suppress EMI / RFI noise for
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EMIF02-MIC01F2
EMIF02-MIC01F2
Date Code Marking STMicroelectronics
STMicroelectronics marking code date
AN1235
JESD97
microphone Preamp schematic
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F8NK85Z
Abstract: P8NK85Z p8nk8 JESD97 STF8NK85Z STP8NK85Z
Text: STP8NK85Z STF8NK85Z N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID ) s ( t c u d o ) r s ( P t c e t u e d l o o r s Description P b e OInternaleschematic diagram
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STP8NK85Z
STF8NK85Z
O-220
/TO-220FP
O-220
O-220FP
F8NK85Z
P8NK85Z
p8nk8
JESD97
STF8NK85Z
STP8NK85Z
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Untitled
Abstract: No abstract text available
Text: EMIF09-SD01F3 9-line IPAD , EMI filter and ESD protection Features • 9-line EMI low-pass filter and ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ 400 µm pitch ■ Very low PCB space occupation: < 4 mm2 ■ Very thin package: 0.6 mm
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EMIF09-SD01F3
IEC61000-4-2
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VIPER22ADIP-E
Abstract: vip*22a
Text: VIPer22A-E VIPer22ADIP-E, VIPer22AS-E Low power OFF-line SMPS primary switcher Features • Fixed 60 kHz switching frequency ■ 9 V to 38 V wide range VDD voltage ■ Current mode control ■ Auxiliary undervoltage lockout with hysteresis ■ High voltage start-up current source
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VIPer22A-E
VIPer22ADIP-E,
VIPer22AS-E
VIPER22ADIP-E
vip*22a
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BGA149
Abstract: TFBGA149 BGA107
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR
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NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
BGA149
BGA107
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2STR1215
Abstract: 2STR2215 JESD97
Text: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications
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2STR1215
OT-23
OT-23
2STR1215
2STR2215.
2STR2215
JESD97
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Panasonic EEFCDJ470R
Abstract: AN2206 L6920DB EEFCDJ470R L6920D ELL6RH100M SD10 SD12 ELL6RH Voltage Supervisory automotive ST
Text: AN2206 Application note Designing with L6920DB, high efficiency syncronous rectifier step-up converter Introduction The L6920DB is a high efficiency monolithic step-up switching converter IC especially designed for battery powered applications, thanks to its minimum start-up of 0.8 V, and a
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AN2206
L6920DB,
L6920DB
Panasonic EEFCDJ470R
AN2206
EEFCDJ470R
L6920D
ELL6RH100M
SD10
SD12
ELL6RH
Voltage Supervisory automotive ST
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F8NK85Z
Abstract: STP8NK85Z JESD97 STF8NK85Z P8NK85Z
Text: STP8NK85Z STF8NK85Z N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH Power MOSFET General features VDSS @Tjmax Type RDS(on) ID STP8NK85Z 850 V < 1.4 Ω 6.7 A STF8NK85Z 850 V < 1.4 Ω 6.7 A • Extremely high dv/dt capability
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STP8NK85Z
STF8NK85Z
O-220
/TO-220FP
O-220
F8NK85Z
STP8NK85Z
JESD97
STF8NK85Z
P8NK85Z
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mic preamp
Abstract: No abstract text available
Text: EMIF02-MIC01F2 2-line IPAD , EMI filter including ESD protection Features • 2-line symetrical low-pass filter ■ Lead-free package ■ High-density capacitor ■ High-efficiency EMI filtering ■ Very small PCB footprint: 1.42 mm x 1.92 mm ■ Very thin package: 0.65 mm
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EMIF02-MIC01F2
EMIF02-MIC01F2
mic preamp
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AN1235
Abstract: EMIF02-MIC01F2
Text: EMIF02-MIC01F2 2-line IPAD , EMI filter including ESD protection Features • 2-line symetrical low-pass filter ■ Lead-free package ■ High-density capacitor ■ High-efficiency EMI filtering ■ Very small PCB footprint: 1.42 mm x 1.92 mm ■ Very thin package: 0.65 mm
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EMIF02-MIC01F2
AN1235
EMIF02-MIC01F2
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TFBGA137
Abstract: BGA137 BGA bga 10x13 MCP NAND DDR NAND FLASH BGA zc 409 NAND512-M NAND01G-M NAND256-M NAND256R3M0
Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Features • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM
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NAND256-M
NAND512-M,
NAND01G-M
256/512Mb/1Gb
x8/x16,
256/512Mb
x16/x32,
TFBGA107
TFBGA149
LFBGA137
TFBGA137
BGA137
BGA bga 10x13
MCP NAND DDR
NAND FLASH BGA
zc 409
NAND512-M
NAND01G-M
NAND256-M
NAND256R3M0
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS LOC D I ST REV I S IONS RESERVED. D E S C R I P T I ON c BARE BOOT DATE REVISE PER ECR-06-00318 09FEB2006 REVISE PER ECR- 0 6 - 0 2I 45
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ECR-06-00318
09FEB2006
3SEPT2006
27APR2005
27APR
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Untitled
Abstract: No abstract text available
Text: TH I S DR AW I NG IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS LOC REV IS IONS D I ST RESERVED. D E S C R I P T I ON DATE R E V I S E PER E C R - 0 6 - 0 0 3 1 8 ADD NOT E 3 DWN 09FEB2006 06MAR09
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ECR-06-00318
09FEB2006
05APR2005
05ARR2005
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Untitled
Abstract: No abstract text available
Text: 4 T H 1S DRAW 1NG C 3 I S U N P U B L 1S H E D . C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC REVISIONS D I ST R E SE RV ED. P LTR D E S C R 1P T 1ON B REVISE B PVC S H OR T CR I MR
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ECR-06-00318
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Untitled
Abstract: No abstract text available
Text: TH 1S DRAW 1NG IS UNPUBL 1SHED. A COPYR1GHT 20 RELEASED FOR PUBLICATION BY TYCO ELECTRON ICS CORPORATION 20 LOC ALL RIGHTS RESERVED. DF REVISIONS D I ST A5 P LTR DESCR1P T 1ON B C D DATE R E V PE R E C R - 0 5 - 1 8 2 7 7 R E V I S E D PE R E C R - 0 6 - 3 2 2 8
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23DEC05
09FEB2006
3MAR2008
ECR-06-3228
JUNE2004
JUNF2004
UNE2004
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