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    093N06N Search Results

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    093N06N Price and Stock

    Rochester Electronics LLC IPA093N06N3GXKSA1

    TRENCH 40<-<100V
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    DigiKey IPA093N06N3GXKSA1 Bulk 950 503
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    Infineon Technologies AG IPP093N06N3GXKSA1

    MOSFET N-CH 60V 50A TO220-3
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    DigiKey IPP093N06N3GXKSA1 Tube
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    Newark IPP093N06N3GXKSA1 Bulk 1
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    Bristol Electronics IPP093N06N3GXKSA1 799
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    IPP093N06N3GXKSA1 18 5
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    Rochester Electronics IPP093N06N3GXKSA1 160 1
    • 1 $0.6198
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    • 100 $0.5826
    • 1000 $0.5268
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    Infineon Technologies AG IPA093N06N3GXKSA1

    MOSFET N-CH 60V 43A TO220-3-31
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    DigiKey IPA093N06N3GXKSA1 Tube 500
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    Newark IPA093N06N3GXKSA1 Bulk 1
    • 1 $1.37
    • 10 $1.18
    • 100 $0.901
    • 1000 $0.696
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    Rochester Electronics IPA093N06N3GXKSA1 20,450 1
    • 1 $0.6027
    • 10 $0.6027
    • 100 $0.5665
    • 1000 $0.5123
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    TME IPA093N06N3GXKSA1 1
    • 1 $1.73
    • 10 $0.91
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    Infineon Technologies AG IPP093N06N3GHKSA1

    MOSFET N-CH 60V 50A TO220-3
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    DigiKey IPP093N06N3GHKSA1 Tube 500
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    Bristol Electronics IPP093N06N3GHKSA1 50
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    Infineon Technologies AG IPP093N06N3 G

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    Bristol Electronics IPP093N06N3 G 200
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    093N06N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    093N06N

    Abstract: 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50 IPP093N06N3
    Text: Type IPB090N06N3 G 093N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original
    PDF IPB090N06N3 IPP093N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 090N06N 093N06N 093N06N 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50

    093N06N

    Abstract: IPA093N06N3 JESD22 PG-TO220-3-31 IPA093N06N3G ipa093n
    Text: 093N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 9.3 mΩ ID 43 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    PDF IPA093N06N3 PG-TO220-3-31 093N06N 093N06N JESD22 PG-TO220-3-31 IPA093N06N3G ipa093n

    093N06N

    Abstract: 090N06N JESD22 PG-TO220-3
    Text: IPB090N06N3 G 093N06N3 G Type OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original
    PDF IPB090N06N3 IPP093N06N3 PG-TO263-3 PG-TO220-3 090N06N 093N06N 093N06N 090N06N JESD22 PG-TO220-3