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    091N06N Price and Stock

    Infineon Technologies AG IPB091N06N-G

    MOSFET N-CHAN D2PAK
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    DigiKey IPB091N06N-G Reel
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    Infineon Technologies AG IPP091N06N-G

    MOSFET N-CHAN TO-220
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    091N06N Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 091N06N G OptiMOS Power-Transistor 091N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 8.8 mΩ 80 A • 175 °C operating temperature


    Original     		PDF IPB091N06N IPP091N06N PG-TO220-3 PG-TO263-3 P-TO220-3-1 P-TO263-3-2 091N06N 091N06N

    PG-TO220-3

    Abstract: PG-TO263-3-2 d80 DIODE
    Text: 091N06N G OptiMOS Power-Transistor 091N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 9.1 mΩ 80 A • 175 °C operating temperature


    Original     		PDF IPB091N06N IPP091N06N PG-TO220-3-1 PG-TO263-3-2 091N06N PG-TO220-3 PG-TO263-3-2 d80 DIODE

    smd G47

    Abstract: PG-TO220-3 d80 DIODE
    Text: 091N06N G OptiMOS Power-Transistor 091N06N G Product Summary Features V DS • Low gate charge for fast switching applications R DS on ,max • N-channel enhancement - normal level SMDversion ID 60 V 8.8 m: 80 A • 175 °C operating temperature • Avalanche rated


    Original     		PDF IPB091N06N IPP091N06N PG-TO220-3 091N06N PG-TO263-3 smd G47 PG-TO220-3 d80 DIODE