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    Abstract: DQ11
    Text: 64Mb: 4 Meg x 16 Mobile SDRAM Features Mobile SDRAM MT48H4M16LF – 1 Meg x 16 x 4 banks Features Figure 1: • 1.70–1.95V • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be


    Original     		PDF MT48H4M16LF 096-cycle 09005aef8237ed98/Source: 09005aef8237ed68 Auto Tran DQ11

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    Abstract: No abstract text available
    Text: Advance‡ 64Mb: 4 Meg x 16 Mobile SDRAM Features Mobile SDRAM MT48H4M16LF – 1 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Figure 1: • On-die temperature compensated self refresh TCSR


    Original     		PDF MT48H4M16LF 096-cycle 09005aef8237ed98, 09005aef8237ed68

    MT48H4M16LF-8

    Abstract: No abstract text available
    Text: 64Mb: 4 Meg x 16 Mobile SDRAM Features Mobile SDRAM MT48H4M16LF – 1 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/support Features Figure 1: • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF MT48H4M16LF 096-cycle 09005aef8237ed98, 09005aef8237ed68 MT48H4M16LF-8