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    08N80C Search Results

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    08N80C Price and Stock

    Infineon Technologies AG SPP08N80C3XKSA1

    MOSFET N-CH 800V 8A TO220-3
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    DigiKey SPP08N80C3XKSA1 Tube 1,918 1
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
    • 1000 $1.03775
    • 10000 $1.03775
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    Avnet Americas SPP08N80C3XKSA1 Tube 15 Weeks 500
    • 1 -
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    • 100 -
    • 1000 $0.89347
    • 10000 $0.89347
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    Mouser Electronics SPP08N80C3XKSA1 987
    • 1 $2.47
    • 10 $1.6
    • 100 $1.44
    • 1000 $1.03
    • 10000 $1.03
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    Newark SPP08N80C3XKSA1 Bulk 943 1
    • 1 $2.56
    • 10 $2.13
    • 100 $1.7
    • 1000 $1.22
    • 10000 $1.11
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    Bristol Electronics SPP08N80C3XKSA1 48
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    Chip1Stop SPP08N80C3XKSA1 Tube 1,269
    • 1 $1.97
    • 10 $1.59
    • 100 $1.15
    • 1000 $1.11
    • 10000 $1.11
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    SPP08N80C3XKSA1 82
    • 1 $2.81
    • 10 $1.94
    • 100 $1.63
    • 1000 $1.63
    • 10000 $1.63
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    EBV Elektronik SPP08N80C3XKSA1 66,500 16 Weeks 500
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    New Advantage Corporation SPP08N80C3XKSA1 8,050 1
    • 1 -
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    • 1000 $1.19
    • 10000 $1.11
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    Infineon Technologies AG SPI08N80C3

    MOSFET N-CH 800V 8A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPI08N80C3 Bulk
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    Chip1Stop SPI08N80C3 480
    • 1 $3.59
    • 10 $3.59
    • 100 $1.95
    • 1000 $1.95
    • 10000 $1.95
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    Infineon Technologies AG SPP08N80C3XK

    MOSFET N-CH 800V 8A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP08N80C3XK Tube
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    Infineon Technologies AG SPI08N80C3XKSA1

    MOSFET N-CH 800V 8A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPI08N80C3XKSA1 Tube
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    Newark SPI08N80C3XKSA1 Bulk 1
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    Bristol Electronics SPI08N80C3XKSA1 2,500
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    Infineon Technologies AG SPA08N80C3XKSA1

    MOSFET N-CH 800V 8A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA08N80C3XKSA1 Tube 1
    • 1 $2.87
    • 10 $2.87
    • 100 $2.87
    • 1000 $1.15888
    • 10000 $1.15888
    		Buy Now
    Avnet Americas SPA08N80C3XKSA1 Tube 15 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.13994
    • 10000 $1.13994
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    Mouser Electronics SPA08N80C3XKSA1 946
    • 1 $2.89
    • 10 $1.47
    • 100 $1.32
    • 1000 $1.15
    • 10000 $1.15
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    Newark SPA08N80C3XKSA1 Bulk 463 1
    • 1 $2.87
    • 10 $2.38
    • 100 $1.9
    • 1000 $1.36
    • 10000 $1.25
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    Chip1Stop SPA08N80C3XKSA1 950
    • 1 $2.98
    • 10 $2.06
    • 100 $1.24
    • 1000 $1.12
    • 10000 $1.12
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    SPA08N80C3XKSA1 50
    • 1 $2.81
    • 10 $2.81
    • 100 $2.81
    • 1000 $2.81
    • 10000 $2.81
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    EBV Elektronik SPA08N80C3XKSA1 13,500 16 Weeks 500
    • 1 -
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    • 1000 -
    • 10000 -
    		Buy Now
    New Advantage Corporation SPA08N80C3XKSA1 2,000 1
    • 1 -
    • 10 -
    • 100 $1.46
    • 1000 $1.46
    • 10000 $1.36
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    Find more 08N80C price and stock on Findchips.com

    08N80C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    08N80C3

    Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA08N80C3 PG-TO220FP 08N80C3 08N80C3 equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W

    08N80C3

    Abstract: equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80
    Text: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040 S4436 08N80C3 equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80

    08N80C3

    Abstract: equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3
    Text: 08N80C3, 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 VDS 800 V RDS on 0.65 Ω ID 8 A P-TO262 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP08N80C3, SPI08N80C3 SPA08N80C3 P-TO220-3-31 P-TO262 P-TO220-3-1 P-TO-220-3-31: SPP08N80C3 08N80C3 equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3

    Untitled

    Abstract: No abstract text available
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPI08N80C3 PG-TO262-3 08N80C3

    SPA08N80C3

    Abstract: spa08n80
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA08N80C3 PG-TO220FP 08N80C3 SPA08N80C3 spa08n80

    08N80C3

    Abstract: 08n80
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP08N80C3 PG-TO220-3 08N80C3 08N80C3 08n80

    08N80C3

    Abstract: equivalent 08N80C3 PG-TO220-3 JESD22 SPP08N80C3 D51A
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP08N80C3 PG-TO220-3 08N80C3 08N80C3 equivalent 08N80C3 PG-TO220-3 JESD22 SPP08N80C3 D51A

    Untitled

    Abstract: No abstract text available
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA08N80C3 PG-TO220FP 08N80C3

    SPP08N80C3

    Abstract: 08n80c3
    Text: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 SPP08N80C3 08n80c3

    d51a

    Abstract: PG-TO262-3
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPI08N80C3 PG-TO262-3 08N80C3 d51a PG-TO262-3

    08N80C3

    Abstract: 08N80 08n80c SPI08N80C3 JESD22 diode d51
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPI08N80C3 PG-TO262-3 08N80C3 08N80C3 08N80 08n80c SPI08N80C3 JESD22 diode d51

    08n80c3

    Abstract: d51a SPP08N80C3
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP08N80C3 PG-TO220-3 08N80C3 08n80c3 d51a SPP08N80C3

    transistor SPP08N80C3

    Abstract: 08N80C3 SPP08N80C3 08N80
    Text: 08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated


    Original     		PDF SPP08N80C3 P-TO220-3-1 Q67040 S4436 08N80C3 transistor SPP08N80C3 08N80C3 SPP08N80C3 08N80

    08N80C3

    Abstract: SPA08N80C3
    Text: 08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated


    Original     		PDF SPA08N80C3 P-TO220-3-31 08N80C3 P-TO220-3-31 Q67040-S4437 08N80C3 SPA08N80C3

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    08N80C3

    Abstract: spa08n
    Text: 08N80C3 08N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO220-3-1 Q67040 S4436 08N80C3 spa08n

    08N80C3

    Abstract: Q67040-S4437 SPP08N80C3 08n80
    Text: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP08N80C3 SPA08N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040 08N80C3 Q67040-S4437 08n80

    08N80C3

    Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W
    Text: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA08N80C3 PG-TO220FP 08N80C3 08N80C3 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W