4503 MOSFET
Abstract: a 4503 data sheet SUD70N02-04P
Text: SPICE Device Model SUD70N02-04P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD70N02-04P
08-Jun-04
4503 MOSFET
a 4503 data sheet
SUD70N02-04P
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SUD50N02-06P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N02-06P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N02-06P
08-Jun-04
SUD50N02-06P
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Untitled
Abstract: No abstract text available
Text: TLMF310. VISHAY Vishay Semiconductors High Intensity SMD LED Description This device has been designed to meet the increasing demand for AlInGaP technology. The package of the TLMF310. is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLMF310.
D-74025
08-Jun-04
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BYS 045
Abstract: BYS 045 08 bys045 BYS035 BYS-045
Text: BYS10-25 thru BYS10-45 Vishay Semiconductors Schottky Barrier Rectifiers DO-214AC SMA Reverse Voltage 25 to 45 V Forward Current 1.5 A Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50)
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BYS10-25
BYS10-45
DO-214AC
BYS10-35
BYS10-25
25K/W
08-Jun-04
BYS 045
BYS 045 08
bys045
BYS035
BYS-045
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SUD50N02-04P
Abstract: No abstract text available
Text: SPICE Device Model SUD50N02-04P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N02-04P
08-Jun-04
SUD50N02-04P
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SUM40N02-09P
Abstract: No abstract text available
Text: SPICE Device Model SUM40N02-09P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM40N02-09P
08-Jun-04
SUM40N02-09P
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M41T315V
Abstract: M41T315W M41T315Y M4TXX-BR12SH SOH28
Text: M41T315Y* M41T315V/W Serial Access Phantom RTC Supervisor FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0V, 3.3V, OR 5V OPERATING VOLTAGE REAL TIME CLOCK KEEPS TRACK OF TENTHS/HUNDREDTHS OF SECONDS, SECONDS, MINUTES, HOURS, DAYS, DATE OF THE MONTH, MONTHS, AND
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M41T315Y*
M41T315V/W
M41T315Y:
M41T315V:
M41T315W:
M41T315V
M41T315W
M41T315Y
M4TXX-BR12SH
SOH28
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82207
Abstract: No abstract text available
Text: TSOP22.IV1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.IV1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
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TSOP22.
D-74025
08-Jun-04
82207
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Untitled
Abstract: No abstract text available
Text: TLME310. VISHAY Vishay Semiconductors High Intensity SMD LED Description This device has been designed to meet the increasing demand for AlInGaP technology. The package of the TLME310. is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a
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TLME310.
D-74025
08-Jun-04
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SUD50P04-15
Abstract: No abstract text available
Text: SPICE Device Model SUD50P04-15 Vishay Siliconix P-Channel 40-V D-S , 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50P04-15
08-Jun-04
SUD50P04-15
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SUD50P04-15
Abstract: No abstract text available
Text: SPICE Device Model SUD50P04-15 Vishay Siliconix P-Channel 40-V D-S , 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50P04-15
18-Jul-08
SUD50P04-15
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MP1470
Abstract: No abstract text available
Text: TH I S DRAW ING I S U N P U B L I S H E D . COP Y R I G H T R E L E A S E D POR P U B L I C A T I ON BY 20 TYCO ELECTRONICS CORPORATION ALL RIGHTS REVISIONS RESERVED. LTR D E S C R I P T I ON DATE R E L E A S E PE R O A O O - O I 8 5 - 0 4 R E V I S E PER OAOO-O I 2 8 - 0 5
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08JUN04
5APR05
6APR2004
07JUN
07JUN2004
MP1470
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. “ . — LOC ALL RIGHTS RESERVED. REVISIONS DIST AD 00 LTR DESCRIPTION OWN DATE MB MZ 08JON04 REV PER EC 0G3C—0212—04 APVD SPECIFICATIONS; .4 1 3 .5 1 2
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0G3C--0212--04
08JON04
500VDC
08JUN2004
08JUN04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS LOC D I ST RE V I S I ONS RESERVED. D E S C R I P T I ON REV PER ECN 0 A 0 0 - 0 2 8 7 - 0 ^ 08JUN2004 DEH R E V I S E PER OAOO-OI 2 2 - 0 5
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0A00-0287-0'
0A00-0I22-05
08JUN2004
18MAR2005
ECR-05-004248
JUN2005
16MAR09
08JUN04
08JUN04
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in6 am
Abstract: No abstract text available
Text: TH I S D R A W I NG IS UNPUBL I S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATIO N FOR ALL PUBLICATION R I GHTS REV IS IONS RESERVED. LTR DESCRIPTION REV PER REVISE ECN PER DATE 0A00-0287-04 DWN DE H 08JUN2004 E C R - 0 5 - 0 I 0 7 53
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08JUN2004
ECR-05-0
2SEPT2005
08JUN04
IMAR2000
in6 am
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