Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 1.27MM 0.4 SQ A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
23-NOV-07
18-DEC-06
08-JAN-02
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10mH inductor
Abstract: 1N4148 SOT-23 Augat N-CHANNEL MOSFET 30V 2A SOT-23 C12120 WSL25 Buck-Boost Converter CDR74B Si2304DS Si4416DY
Text: Si9136DB Vishay Siliconix Si9136 Demonstration Board FEATURES D D D D D D D Up to 95% Efficiency 3% Total Regulation 5.5-V to 30-V Input Voltage Range 3.3-V, 5-V, and 12-V Outputs 200-kHz Fixed Frequency Operation Precision 3.3-V Reference Output 30-mA Linear Regulator Output
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Si9136DB
Si9136
200-kHz
30-mA
28-Pin
CDRH125-100
10-mH
CDRH125
CDRH62B
10mH inductor
1N4148 SOT-23
Augat
N-CHANNEL MOSFET 30V 2A SOT-23
C12120
WSL25
Buck-Boost Converter
CDR74B
Si2304DS
Si4416DY
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OP400
Abstract: ASD0012517
Text: Quad Low-Offset, Low-Power Operational Amplifier OP400 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.
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PDF
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OP400
MIL-PRF-38534,
com/OP400
MIL-STD-883
ASD0012517
08-JAN-02
17-APR-03
9-JUL-07
OP400
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Leaded Magnetics and Inductors
Abstract: IRF power mosfets catalog dale ihd-3 Irf 1540 N SRF 2769 irf 3719 34051 fet 2SF 826 transistor IRF 9734 irf 1507 data sheet
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book LEADED MAGNETICS AND INDUCTORS vishay DALE vsD-db0058-0112 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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PDF
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vsD-db0058-0112
Leaded Magnetics and Inductors
IRF power mosfets catalog
dale ihd-3
Irf 1540 N
SRF 2769
irf 3719
34051 fet
2SF 826 transistor
IRF 9734
irf 1507 data sheet
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 A ± 0.15 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 1.27MM A ENVIRONMENTAL
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PDF
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UL94-V0
E323964
19-FEB-14
26-JUL-13
24-OCT-11
25-NOV-09
23-NOV-07
18-DEC-06
08-JAN-02
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70511
Abstract: SUM110N08-05
Text: SPICE Device Model SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 200°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N08-05
0-to10V
08-Jan-02
70511
SUM110N08-05
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Si9801
Abstract: GRM235Y5V106Z016AL SILICONIX Si9801 Si9801DY C25Y5U1E106Z MOSFET 1 KW 9801 so-8 C25Y5U1E106ZP DIFS4 Si6803DQ
Text: Si9161DB Vishay Siliconix Si9161 Optimized-Efficiency Boost Converter Demonstration Board FEATURES D D D D Synchronous Boost Converter Voltage Mode Control Si9160 Architecture Optimized for “Light-Load” Efficiency High Frequency Switching up to 2 MHz
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Si9161DB
Si9161
Si9160
CRW06032201FRT1
CRW06031000FRT1
CRW06031202FRT1
Si9801
GRM235Y5V106Z016AL
SILICONIX Si9801
Si9801DY
C25Y5U1E106Z
MOSFET 1 KW
9801 so-8
C25Y5U1E106ZP
DIFS4
Si6803DQ
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Untitled
Abstract: No abstract text available
Text: 81.28 [3.200] DETAIL A SCALE 4:1 6.90 [.272] 1.00±0.20 [.039±.008] 28.50 [1.122] MAX 25.30 [.996] MAX 3.20±0.30 [.126±.012] 13.97 [.550] 87.13 [3.430] 3.30 [.130] MAX 13.97*5=69.85 [0.55*5=2.75] DETAIL A 8 1 1 8 DETAIL B SCALE 3:1 DETAIL B 7.60±0.20 [.299±0.008]
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110ale
MJDS-LG5-88-12NGF9P-30
MJDS-LG51-88-12NGF9P-30
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MF CAPACITOR
Abstract: MBR0520T1 10 mf capacitor IHLP2525 36 MF CAPACITOR MOSFET 1 KW VJ0805105KXXAT SIP 9 JP1 CRCW08051000FRT1 mf mosfet
Text: Si9166DB Vishay Siliconix Si9166 Demonstration Board FEATURES D Voltage Mode Control D 2.7- to 6-V Input Voltage Rang for VDD and VS D Programmable PWM/PSM Control D Up to 2-MHz Switching Frequency in PWM D D D D D Synchronous Rectification in PWM D Less Than 200-mA IDD in PSM
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Si9166DB
Si9166
200-mA
Si9165
VJ0805470KXXAT
MBR0520T1
OD-123
IHLP2525
MF CAPACITOR
MBR0520T1
10 mf capacitor
IHLP2525
36 MF CAPACITOR
MOSFET 1 KW
VJ0805105KXXAT
SIP 9 JP1
CRCW08051000FRT1
mf mosfet
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MBR0520T1
Abstract: SIP 9 JP1 CRCW08051001FRT1 VJ0805104KXXAT pwm schematic buck converter PWM 2525 CRCW08052002FRT1 CRCW08052202FRT1 CRCW08053901FRT1 Si9165
Text: Si9165DB Vishay Siliconix Si9165 Demonstration Board FEATURES D D D D D D D D D D D D D D Voltage Mode Control Fully Integrated MOSFET Switches 600-mA Load Capability 2.7- to 6-V Input Voltage Range for VDD and VS Programmable PWM/PSM Control Up to 2-MHz Switching Frequency in PWM
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Si9165DB
Si9165
600-mA
200-mA
GRM42-2X5R106K16
VJ0805271KXXAT
VJ0805122KXXXAT
MBR0520T1
OD-123
MBR0520T1
SIP 9 JP1
CRCW08051001FRT1
VJ0805104KXXAT
pwm schematic buck converter
PWM 2525
CRCW08052002FRT1
CRCW08052202FRT1
CRCW08053901FRT1
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MBR0520T1
Abstract: SIP 9 JP1 CRCW08051001FRT1 CRCW08052002FRT1 CRCW08052202FRT1 Si9165 Si9169 Si9169DB TSSOP-20 capacitor 1000 MF
Text: Si9169DB Vishay Siliconix Si9169 Demonstration Board FEATURES D D D D D D D D D D D D D D Voltage Mode Control Fully Integrated MOSFET Switches 1-A Load Capability 2.7- to 6-V Input Voltage Range for VDD and VS Programmable PWM/PSM Control Up to 2-MHz Switching Frequency in PWM
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Si9169DB
Si9169
200-mA
Si9165,
Si9165.
GRM42-2X5R106K16
VJ0805271KXXAT
VJ0805123KXXXAT
MBR0520T1
SIP 9 JP1
CRCW08051001FRT1
CRCW08052002FRT1
CRCW08052202FRT1
Si9165
TSSOP-20
capacitor 1000 MF
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OP400
Abstract: Analog Devices space qualified
Text: Thursday, Mar 13, 2008 10:50 AM / Quad Low-Offset, Low-Power Operational Amplifier OP400 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.
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Original
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PDF
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OP400
MIL-PRF-38534,
com/OP400
ASD0012517
MIL-STD-883
08-JAN-02
OP400
Analog Devices space qualified
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2 port RJ45 8p8c
Abstract: STACKED MOD JACK RJ45 CAT-5 modular jack 4 port ganged RJ45 8P8C
Text: e A 1.00±0.20 [.039±0.008] 109.22±0.13 [4.300±.005] DETAIL A d 2.20±0.50 [.087] SCALE- 3:1 7.40±0.30 [.291] e DETAIL B SCALE- 3:1 3.30 [.130] MAX 115.06 [4.530] 7 x 13.97= 97.79 [3.850] 1 DETAIL A 25.50 [1.004] MAX 1 3.50±0.20 [.138±.008] 8 28.50 [1.122] MAX
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08JAN02
MJDS-LG5-88-16GF10P-30
2 port RJ45 8p8c
STACKED MOD JACK RJ45 CAT-5
modular jack 4 port ganged RJ45 8P8C
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200mh inductor
Abstract: No abstract text available
Text: TE and TD Vishay Dale Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one
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110PPM/
185PPM/
50PPM/
25NCY
08-Jan-02
200mh inductor
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OP400
Abstract: Analog Devices space qualified OP-400 17APR03
Text: Quad Low-Offset, Low-Power Operational Amplifier OP400 This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.
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Original
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PDF
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OP400
MIL-PRF-38534,
com/OP400
MIL-STD-883
08-JAN-02
17-APR-03
9-JUL-07
OP400
Analog Devices space qualified
OP-400
17APR03
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Untitled
Abstract: No abstract text available
Text: Quad Low-Offset, Low-Power Operational Amplifier OP400 This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as modified herein.
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Original
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PDF
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OP400
MIL-PRF-38534,
com/OP400
MIL-STD-883
08-JAN-02
17-APR-03
9-JUL-07
13-FEB-08
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Untitled
Abstract: No abstract text available
Text: VISHAY Vishay Dale Inductors Toroid, High Current FEATURES • Printed circuit mounting. • Wide range of inductance and current ratings. • Toroid design reduces EMI. • Vertical or horizontal mounting to optimize PC. Board layout. APPLICATIONS Switching power supplies, EMI/RFI filtering, output chokes.
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OCR Scan
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PDF
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330uH
08-Jan-02
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