Untitled
Abstract: No abstract text available
Text: Analog Power AM70N03-08D N-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 8 @ VGS = 10V 11.5 @ VGS = 4.5V ID(A) 65 54 Typical Applications:
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AM70N03-08D
AM70N03-08D
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08D diode
Abstract: No abstract text available
Text: SKM 300 GARL 066 T Absolute Maximum Ratings Symbol Conditions IGBT 3 * + ! 3 ;* + )*+8 " :00 /00 < =0 + &00 < :00 < ? )0 3 (*0 + : C )* + /0 < =0 + &0 < :0 < 3 (*0 + (:0 < )* +
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20/A4008ER
Abstract: 253/C25 02D CXA4008ER
Text: MEMS Sensing and Driver for Laser Projector CXA4008ER Description The CXA4008ER is MEMS sensing and driver IC for Laser Beam scanning type Laser Projector. Features ◆ MEMS Horizontal signal sensing ◆ 12bitSAR-ADC ◆ Instrumentation ◆ Detection ◆ Voltage
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CXA4008ER
CXA4008ER
12bitSAR-ADC
16bitSAR-ADC
16bitDAC
CXA4007ER
A4008ER
20/A4008ER
253/C25 02D
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MAX607
Abstract: No abstract text available
Text: Evaluates: MAX11300 MAX11300 Evaluation Kit General Description The MAX11300 evaluation kit EV kit provides a proven design to evaluate the MAX11300 20-port programmable mixed-signal I/O with 12-bit ADC, 12-bit DAC, analog switches, and GPIO. The EV kit also includes
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MAX11300
MAX11300
20-port
12-bit
MAX11300GTL+
2N3904)
50-Pin
MAX607
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Untitled
Abstract: No abstract text available
Text: . - STLdOTDgDE IGBT & FWD 1MB 08D-120 Fuji Discrete Package IGBT ’IT Outline Drawing I Features Square RBSOA * Low Saturation Voltage ► Less Total Pow er Dissipation * M inim ized Internal Stray Inductance * I Applications High Pow er Switching A. C. M otor Controls
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08D-120
GGD44a3
702708-Dallas,
0DQ44fl4
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ IGBT & FWD 12sT 1MB 08D-120 Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • M inim ized Internal Stray Inductance ■ Applications • High Pow er Switching
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08D-120
0QD44fl2
DQQ44A3
702708-Dallas,
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tiristor
Abstract: diodo a7 diodo 105 skkt 19/12d Semikron sk 1 1200/18e semikron SKKT 162/12E
Text: SEHIKRON INC DbE D | fll3bb71 DOOllTE fl 7“- s r - ¿3 SEM IPACK Thyristor/Diode Modules SEM IPACK® Thyristor/Dioden-Module SEM IPACK® Modules a thyristors/diodes isolated metal bases. V^oi = 2500 V— V V A A SK K T 131/08D /12D.E /14E /16D, E 900 1300
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fll3bb71
131/08D
161/08D
tiristor
diodo a7
diodo 105
skkt 19/12d
Semikron sk 1 1200/18e
semikron SKKT 162/12E
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JIS K 5400 8.1
Abstract: semikron skkt 161 4700 IC 15Z DIODE skkh 92 08d t71 thyristor VGT200 skkt161
Text: SEMIKRON 1SE D § êl3bb?l 0001433 4 | INC SEMIKRON T */drm dv/ dt cr V V /n s i/ rsm î/ rrm V 900 800 500 1300 1200 500 1000 1500 1400 1000 1700 1600 500 1000 - Z 3 Itrms (maximum values for continuous operation) 240 A 150 A (85 °C) SKKT 131/08D 131/12 D
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131/08D
131/12E
131/14E
131/16D
131/16E
161/08D
161/12D
161/12E
161/16D
161/16E
JIS K 5400 8.1
semikron skkt 161
4700 IC
15Z DIODE
skkh 92 08d
t71 thyristor
VGT200
skkt161
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Untitled
Abstract: No abstract text available
Text: n THIS 6 U N hj& uS rfb. RELEASED F M NJ6U6ATI6N cCOPTRCHT - _ BY TYCO ELECTRONC5 ALL ROUTS RESERVED. — — • • _ IOC 01ST AA 0 0 R E V IS IO N S c MECHANICAL: QL 08D E C 08 REV P E R ECO —0 8 —0 1 8 5 1 5 TX •.8 5 0 MAX ■ r— .100
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C26800
100jainch
31IHR2D00
1BJAN05
10JANO5
IBJAN05
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skkt 90
Abstract: KT25 KT213 mikron
Text: s e MIKROn V rsm V rrm Vdrm V V 900 dv/dt cr Itrms (maximum values for continuous operation) 370 A | 420 A j j 420 A Ita v (sin. 180; case —85 °C 250 A V/ns 230 A SKKT SKKT 800 500 213/08D 253/08 D 250 A SKKH 1200 1000 213/12 E 253/12 E 213/12 E 253/12 E
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425/3x360
465/3x400
SKKT213
SKKH213
KT253O60
skkt 90
KT25
KT213
mikron
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Untitled
Abstract: No abstract text available
Text: r 8 7 1 - •” O C C P TR C H T - BY TYCO ELECTROMCS CORPORATDN. ^ n | 01ST • M «6R V O >. R E V IS IO N S 22 B MECHANICAL: A \ I— .100 1 3 5 7 9 -O O O O O O O 2 O 4 Q 6 10 QL TX 08D E C 2008 R EV P E R ECO —0 8 —0 2 1 5 3 2 MATERIALS: -HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0 .
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C26800
30ulNCH
100ulNCH
100ulNC
1000pF,
31IMR2000
MAG45
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08D diode
Abstract: No abstract text available
Text: TSAL7600 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm iJ -V A Package Description TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages. In comparison with the standard GaAs on GaAs technol
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TSAL7600
TSAL7600
D-74025
ec-98
08D diode
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semikron skkt 15/04d
Abstract: No abstract text available
Text: SEHIKRON INC ObE D | Ô13L.L.71 D D D U I O M , ! j I E i r - J , - ‘ 5 M | - « SEMIPACK Thyristor/Diode Modules SEMIPACK® Thyristor/Dioden-Module SEMIPACK® Modules a thyristors/diodes isolated metal bases. Visol = 2500 V ~ V rsm V qRM V rrm Ith m s
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91/04D
CaseA15
SKKD260
CaseA16
SKKL161
CaseA28
SKKE260
SKKD201
CaseA17
SKKE201
semikron skkt 15/04d
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Untitled
Abstract: No abstract text available
Text: rZ7 SGS-THOMSON ^ 7 # g [L J * S T M M 5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
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Untitled
Abstract: No abstract text available
Text: Ordering number: ENN7030~j Diffused Junction Silicon Diode DBD10 Is m I ÿ o i 1.OA Single-Phase Bridge Rectifier Features • Plastic m olded structure. • Peak reverse voltage : V R M -200V , 600V. • A verage rectified c u rre n t: lo -I.O A . Package Dimensions
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ENN7030
DBD10
-200V
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05p47
Abstract: 5SDA05p
Text: Avalanche Rectifier Diodes ABB Semiconductors AG I - Optimiert für Anwendungen mit Netzfrequenz. - Niedrige Durchlaßspannung, enge Durchlaß-Spannungsbereiche für Parallelschaltung. - Selbstschutz gegen transienten Überspannungen. - Garantierte maximale Verlustleistung
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Vrrm/100
14x100
50x100
05p47
5SDA05p
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5SDA
Abstract: mml 600 71B0200 avalanche 850 nm 5SDA07D
Text: Rectifier Diodes ¡conductors AGI - O ptim ized for line frequency rectifiers. - Low on-state voltage, narrow V F-bands for parallel operation. - Self-protected against transient over voltages. - G uaranteed m axim um avalanche pow er dissipation. — O ptim iert für Anw endungen mit
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VRRM/100V
50x100
D01tifi36
5SDA
mml 600
71B0200
avalanche 850 nm
5SDA07D
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08D diode
Abstract: X53200
Text: R E C T I F I E R _ D Optimized for line frequency rectifiers. Low on-state voltage, narrow Vp-bands for parallel operation. Self protected against transient over voltages. Guaranteed maximum avalanche power dissipation. I O D E S - O ptim iert für Anwendungen mit Netz
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2000A/200V
08D diode
X53200
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74HC1G08/D Product Preview M C74HC1G08 2 -In p u t AND G ate The MC74HC1G08 is a high speed CMOS 2 -in p u t AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low
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C74HC1G08/D
C74HC1G08
MC74HC1G08
19A-01
MC74HC
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74HC1G08/D Product Preview M C74HC1G08 2 -In p u t AND G ate The MC74HC1G08 is a high speed CMOS 2 -in p u t AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low
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C74HC1G08/D
C74HC1G08
MC74HC1G08
19A-01
MC74HC
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74AHC08
Abstract: 74AHC08D 74AHC08PW 74AHCT08 74AHCT08D 74AHCT08PW L7HS
Text: P hilips S em ico n d uctors Product sp ecification Q uad 2-in pu t AN D gate 74A H C 08; 74A H C T 08 FEA TUR ES Q U IC K R E F E R E N C E DATA • O utput capability: standard GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • ESD protection:
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74AHC08;
74AHCT08
EIA/JESD22-A114-A
EIA/JESD22-A115-A
74AHC/AHCT08
74AHC08
74AHC08D
74AHC08PW
74AHCT08
74AHCT08D
74AHCT08PW
L7HS
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ic udn2981
Abstract: udn2981 udn2983a UDN2982A UDN2981 application note UDN2982 UDN2984A
Text: T1IRI 2 98 4 8-CHANNEL SOURCE DRIVERS UDN2982/84LW c j — D > ]— ^ U D N 298I-84A Recom m ended for applications requiring separate logic and load grounds, load supply voltages to 80 V, and load currents to 500 mA, the UDN2981A through U DN2984A/LW 8-channel source drivers are
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UDN2982/84LW
UDN2981A
DN2984A/LW
UDN2983A
UDN2982A/LW
UDN2984A/LW
ic udn2981
udn2981
UDN2982A
UDN2981 application note
UDN2982
UDN2984A
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HVR3509
Abstract: kbp 3510 DF101 3505G P6KE 6CA GENERAL SEMICONDUCTOR CK 6CA SMd 6CA smd diodes ke 48 model PB201M smd 8ca
Text: iiA irr PRODUCT PACKAGING SPECIFICATIONS AMMOPAK PACKAGING FOR TRANSISTORS TO-92 PLASTIC CASE Carrier tape Specification of carrier tape T h e c a rrie r tap e c o n s is ts of a c a r d b oard strip with s p ro c k e t holes. The p ins of th e tr a n s is to rs are s e c u re d
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KBL005,
KBL01,
RS401S-RS407S
RS501S-RS507S.
KBP005G
KBP10G,
KBP2005G
KBP210G,
E95060A
D1I/0118310
HVR3509
kbp 3510
DF101
3505G
P6KE 6CA
GENERAL SEMICONDUCTOR CK 6CA
SMd 6CA
smd diodes ke 48 model
PB201M
smd 8ca
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Untitled
Abstract: No abstract text available
Text: SN75140, SN75141 DUAL LINE RECEIVERS SLLS080B - JANUARY 1977 - R EVISED MAY 1995 • • Single 5-V Supply ■ • ±100-m V Sensitivity I I I P OR PSt PACKAGE TOP VIEW • For Application as: Single-Ended Line Receiver Gated Oscillator Level Comparator
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SN75140,
SN75141
SLLS080B
100-m
SN75140
SN75141
ibl72M
CHfi50c
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