TSOP343
Abstract: tsop3436 TSOP3438 TSAL6200 TSOP341 TSOP348
Text: New TSOP341./TSOP343. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP34#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the
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TSOP341.
/TSOP343.
TSOP34#
TSOP343.
08-Apr-05
TSOP343
tsop3436
TSOP3438
TSAL6200
TSOP341
TSOP348
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1N4148WS-V-GS08
Abstract: 1N4148WS-V-GS18 1N4148 SOD323 1N4148WS-V 1N4148 Fast Switching Diode 1N4148 SOT23 DO35 IMBD4148-V LL4148 1N4148
Text: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case e3 with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT23 case with the
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1N4148WS-V
1N4148,
LL4148,
IMBD4148-V
2002/95/EC
2002/96/EC
OD323
GS18/10
GS08/3
1N4148WS-V-GS08
1N4148WS-V-GS18
1N4148 SOD323
1N4148WS-V
1N4148 Fast Switching Diode
1N4148 SOT23
DO35
IMBD4148-V
LL4148
1N4148
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c 5706
Abstract: AN609 Si8900EDB
Text: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8900EDB
AN609
08-Aug-07
c 5706
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Transistor 5503
Abstract: AN609
Text: Si5853BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5853BDC
AN609
CONFI169
08-Aug-07
Transistor 5503
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7009 A 8290
Abstract: SI8901 AN609 Si8901EDB
Text: Si8901EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8901EDB
AN609
08-Aug-07
7009 A 8290
SI8901
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AN609
Abstract: Si7909DN
Text: Si7909DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7909DN
AN609
08-Aug-07
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qfn 3x3 tray dimension
Abstract: XL1007-QT-0G0T mimix amplifier L1007 XL1007-QT XL1007-QT-0G00 XL1007-QT-EV1
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
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08-Aug-07
L1007-QT
XL1007-BD-000X
qfn 3x3 tray dimension
XL1007-QT-0G0T
mimix amplifier
L1007
XL1007-QT
XL1007-QT-0G00
XL1007-QT-EV1
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DM6030HK
Abstract: TS3332LD XP1013 XP1013-BD XP1013-BD-000V XP1013-BD-EV1
Text: 17.0-26.0 GHz GaAs MMIC Power Amplifier P1013-BD August 2007 - Rev 08-Aug-07 Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
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P1013-BD
08-Aug-07
MIL-STD-883
XP1013-BD
XP1013-BD-000V
XP1013-BD-EV1
XP1013
DM6030HK
TS3332LD
XP1013-BD
XP1013-BD-000V
XP1013-BD-EV1
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Untitled
Abstract: No abstract text available
Text: 3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier August 2007 - Rev 08-Aug-07 L1007-QT Features 12 dB Gain 2 dB Noise Figure 3x3 QFN Package Single Power Supply 3-5 V, 40 mA Self Bias On-Chip ESD Protection Circuit Description Mimix Broadband’s 3.5 to 8.0 GHz low noise
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08-Aug-07
L1007-QT
XL1007-BD-000X
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1N4148 sod123
Abstract: 1N4148W-V diode sod123 marking 1200 1N4148W SOD123 1N4148 DO35 1N4148 Fast Switching Diode 1N4148 SOT23 1N4148 1N4148W-V-GS18 DO35
Text: 1N4148W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case with the type designation 1N4148, the e3 MiniMELF case with the type designation LL4148, and the SOT23 case with the
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1N4148W-V
1N4148,
LL4148,
IMBD4148-V.
2002/95/EC
2002/96/EC
OD123
GS18/10
GS08/3
1N4148W-V-GS18
1N4148 sod123
1N4148W-V
diode sod123 marking 1200
1N4148W SOD123
1N4148 DO35
1N4148 Fast Switching Diode
1N4148 SOT23
1N4148
DO35
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tsop3236
Abstract: IR tsop 20750 TSAL6200 TSOP32 TSOP322 TSOP323 TSOP RECEIVER nec
Text: New TSOP321./TSOP323. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP32#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the
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TSOP321.
/TSOP323.
TSOP32#
TSOP323.
08-Apr-05
tsop3236
IR tsop 20750
TSAL6200
TSOP32
TSOP322
TSOP323
TSOP RECEIVER nec
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tsop38 pin diagram
Abstract: TSOP38 TSOP RECEIVER TSOP384 TSOP3830 RC5 IR TSAL6200 TSOP381 TSOP382 rc5 tsop
Text: New TSOP382./TSOP384. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP38#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the
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TSOP382.
/TSOP384.
TSOP38#
TSOP384.
08-Apr-05
tsop38 pin diagram
TSOP38
TSOP RECEIVER
TSOP384
TSOP3830
RC5 IR
TSAL6200
TSOP381
TSOP382
rc5 tsop
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Untitled
Abstract: No abstract text available
Text: 0.25-6.0 GHz High Dynamic Range Amplifier CMM6004-AH August 2007 - Rev 08-Aug-07 Features Functional Block Diagram 0.25 to 6.0 GHz Frequency Range +41 dBm Output IP3 1.7 dB Noise Figure 15 dB Gain +23 dBm P1dB LGA Package Single Power Supply Single Input Matching
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CMM6004-AH
08-Aug-07
CMM6004-AH
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34065
Abstract: 4833 AN609 Si8402DB
Text: Si8402DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8402DB
AN609
08-Aug-07
34065
4833
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3188
Abstract: Model 8130 mosfet 0018 AN609 Si8407DB 40978
Text: Si8407DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8407DB
AN609
08-Aug-07
3188
Model 8130
mosfet 0018
40978
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AN609
Abstract: Si7948DP
Text: Si7948DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7948DP
AN609
08-Aug-07
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Untitled
Abstract: No abstract text available
Text: 1.5-6.0 GHz GaAs MMIC Packaged Driver Amplifier August 2007 - Rev 08-Aug-07 CMM9000-QT Features 15 dB Gain 15 dBm P1dB 3x3 QFN Package Single Positive Supply 4-8 V, 70 mA Self Bias DC Blocking Capacitors and RF Choke Inductors Integrated On-Chip RoHS Compliant
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08-Aug-07
CMM9000-QT
CXX1234-XX-0L0T
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tsop3236
Abstract: m 81747 TSAL6200 TSOP32 TSOP322 TSOP3256 96 1050
Text: New TSOP322./TSOP324. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP32#. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the
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TSOP322.
/TSOP324.
TSOP32#
TSOP324.
08-Apr-05
tsop3236
m 81747
TSAL6200
TSOP32
TSOP322
TSOP3256
96 1050
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S CM 00 LTR DESCRIPTION R1 SOLDERABILITY SPECIFICATION DWN APVD 08AUG07 KW DC 1 . PARTS '2\ CONTACT IS PLATED OVERALL WITH 0 . 0 0 1 2 7 [ .0 0 0 0 5 0 ] NICKEL, THEN
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08AUG07
23JUN2003
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS 4 U N P U B L IS H E D . BY © C O COPYRIGHT RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 - - R E S ER V ED . GP R E V IS IO N S 00 P LTR D E S C R IP TIO N A REVISE PER EC DATE DWN APVD 08AUG07 AZ LL D D WIRING DIAGRAM
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08AUG07
4500E
2000E
31MAR2000
30AWG*
L20276,
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mate-n-lok* NYLON
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 00 R E VIS IO N S LTR DESCRIPTION R1 PARTS COMPLY TO AMP 1 & DATE DWN KW DC 08AUG07 ECO—0 7 —01 7257 SOLDERABILITY SPECIFICATION
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08AUG07
109-M-3.
24JUN2003
31MAR2000
mate-n-lok* NYLON
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S R E V IS IO N S 50 RESERVED. LTR D E S C R IP T IO N H2 ECR —07 —01 8635 RED RAW N
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08AUG07
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Untitled
Abstract: No abstract text available
Text: FO -55 _±_ HONE YWELL CW- B 9 0 7 P A R T NUMBER SUPERCEDES : V 7- I V I 9E 9 9 4 - 40 3 X 2 0 0 9 3 I - V7 3 140 I I T REV A DOCUMENT 003378 C H A N G E D BY MST CHECK I4SPP07 PS R . 330 60 . . I' 3X . 2 5 0 ± . 0 0 3 A. - COR R OS I ON R E S I S T A N T
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CW-B9071
X20093I-V7
VI9E994-
FO-55I
I4SEP07
08AUG07
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 2 3 E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S - R E V IS IO N S RESERVED. C O R P O R A T IO N . 50 AF D E S C R IP T IO N R E VIS E D 1 P ER CONTINUOUS
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ECR-07-018043
08AUG07
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