PBT/PBT GF15 connector
Abstract: PBT GF15 connector
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 RELEASED FOR PUBLICATION 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P A B D DESCRIPTION LTR C DATE DWN APVD FIRST ISSUE 11FEB2009 AV GT ADDED LOAD MARKS 07JUL2011 AV GT REVISED PER ECR-14-004322 27MAR2014 RS
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07JUL2011
ECR-14-004322
11FEB2009
27MAR2014
2xAWG18
PBT/PBT GF15 connector
PBT GF15 connector
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. P A A1 D DESCRIPTION LTR B C DATE DWN APVD FIRST ISSUE 11FEB2009 CHANGED RAW MTL ACC.TO UL REQUIREMENTS 30NOV2009 AV GT ADDED LOAD MARKS 07JUL2011
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07JUL2011
ECR-14-004322
30NOV2009
11FEB2009
27MAR2014
2xAWG18
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Untitled
Abstract: No abstract text available
Text: SM20100D1 VOLTAGE 100 V 20Amps Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z Low forward voltage drop High current capability High reliability High surge current capability
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SM20100D1
20Amps
O-252
UL94V-0
MIL-STD-202
07-Jul-2011
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Untitled
Abstract: No abstract text available
Text: SM1645D1 VOLTAGE 45 V 16Amps Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z Low forward voltage drop High current capability High reliability High surge current capability
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SM1645D1
16Amps
O-252
UL94V-0
MIL-STD-202
07-Jul-2011
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9435P
Abstract: SSG9435P
Text: SSG9435P P-Ch Enhancement Mode Power MOSFET -5.7 A, -30 V, RDS ON 49 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to
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SSG9435P
07-Jul-2010
9435P
SSG9435P
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STL70N
Abstract: No abstract text available
Text: STL70N2LLH5 N-channel 30 V, 0.0059 Ω, 18 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL70N2LLH5 30 V <0.0068 Ω 18 A (1) 8 1. This value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark
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STL70N2LLH5
STL70N2LLH5
STL70N
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Schottky
Abstract: SOD123 footprint marking code 153 DIODE sod 23 BAT48JFILM ST Low Forward Voltage Schottky Diode sod 323 SOD-123 marking code A1 SOD-323 marking code a2 12634 NV SOD MARKING CODE
Text: BAT48 Small signal Schottky diode Features • Low leakage current losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode BAT48ZFILM Single SOD-123
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BAT48
OD-123
BAT48ZFILM
BAT48JFILM
OD-323
BAT48
OD-123,
DO-35.
BAT48RL
Schottky
SOD123 footprint
marking code 153 DIODE sod 23
BAT48JFILM
ST Low Forward Voltage Schottky Diode sod 323
SOD-123 marking code A1
SOD-323 marking code a2
12634
NV SOD MARKING CODE
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Untitled
Abstract: No abstract text available
Text: STPS1L20MF Low drop power Schottky rectifier in flat package Features A • Very low profile package: 0.85 mm ■ Backward compatible with standard STmite footprint ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching
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STPS1L20MF
DO222-AA)
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Untitled
Abstract: No abstract text available
Text: STL70N2LLH5 N-channel 30 V, 0.0059 Ω, 18 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL70N2LLH5 30 V <0.0068 Ω 18 A (1) 8 5 1. This value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark
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STL70N2LLH5
STL70N2LLH5
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lin bus example C codes
Abstract: errata stm8 STM8S20xxx pm0044 STM8S208MB errata sheet STM8S207C6 i2c berr stm8 STM8 CPU programming manual STM8S207R8 STM8S207S6
Text: STM8S20xxx Errata sheet STM8S performance line device limitations Silicon identification This errata sheet applies to revisions X and Y/6 of the STMicroelectronics STM8S performance line products. A full list of part numbers is shown in Table 1. The products can be identified see Table 2 by:
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STM8S20xxx
STM8S207xx
STM8S207MB,
STM8S207M8,
STM8S207RB,
STM8S207R8,
STM8S207R6,
STM8S207CB,
STM8S207C8,
STM8S207C6,
lin bus example C codes
errata stm8
STM8S20xxx
pm0044
STM8S208MB errata sheet
STM8S207C6
i2c berr stm8
STM8 CPU programming manual
STM8S207R8
STM8S207S6
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - DIM C REF D 1 MATERIAL: HOUSING: LCP, COLOR: 2 CONTACTS: BRASS. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL ENTIRE POST . 3 HOLDDOWN: COPPER ALLOY. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL .
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ECR-13-008007
17SEP2013
07JUL2010
ECR-10-013359
20FEB2009
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Untitled
Abstract: No abstract text available
Text: SMG2301P -2.6 A, -20 V, RDS ON 0.130 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process
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SMG2301P
SC-59
SC-59
07-Jul-2010
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC BY - DIM C REF D 1 MATERIAL: HOUSING: LCP, COLOR: 2 CONTACTS: BRASS. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL ENTIRE POST . 3 HOLDDOWN: COPPER ALLOY. FINISH: 2.54µm MIN MATTE TIN OVER NICKEL.
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ECR-13-008007
17SEP2013
07JUL2010
ECR-10-013359
19FEB2009
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Untitled
Abstract: No abstract text available
Text: SM20100D1 VOLTAGE 100 V 20Amps Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z Low forward voltage drop High current capability High reliability High surge current capability
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SM20100D1
20Amps
O-252
UL94V-0
MIL-STD-202
07-Jul-2011
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Untitled
Abstract: No abstract text available
Text: L6924D Battery charger system with integrated power switch for Li-Ion/Li-Polymer Features • Fully integrated solution, with a power MOSFET, reverse blocking diode, sense resistor, and thermal protection ■ Ideal for coke and graphite anode single-cell Li-Ion packs
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L6924D
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8N65M5
Abstract: VCL40
Text: STL8N65M5 N-channel 650 V, 0.56 Ω, 7 A MDmesh V Power MOSFET in PowerFLAT™ 5x5 Features Order code STL8N65M5 VDSS @ TJmax 710 V RDS on max ID 7 8 6 < 0.6 Ω 7A 9 (1) 5 10 11 1. The value is rated according to Rthj-case 4 3 12 • Worldwide best RDS(on) * area
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STL8N65M5
STL8N65M5
8N65M5
VCL40
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SMG2339P
Abstract: MosFET
Text: SMG2339P -3.6 A, -30 V, RDS ON 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process
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SMG2339P
SC-59
07-Jul-2010
SMG2339P
MosFET
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BAT48RL
Abstract: No abstract text available
Text: BAT48 Small signal Schottky diode Features • Low leakage current losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode BAT48ZFILM Single SOD-123
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BAT48
BAT48ZFILM
OD-123
BAT48JFILM
OD-323
BAT48
OD-123,
OD-323
DO-35.
BAT48RL
BAT48RL
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tyco 114-5148
Abstract: No abstract text available
Text: 2 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PUBLICATION JUN 1990. R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT 1990 By Tyco E le c tro n ic s Japo n O.K. LTR D E S C R IP TIO N REVISED 9 "T V - U > v W IRE PER DATE E C R - 1 1- 00 71 43 DWN
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07JUL201
tyco 114-5148
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tyco 114-5148
Abstract: No abstract text available
Text: 2 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PUBLICATION JUN 1990- R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT 1990 By Tyco E le c tro n ic s Japo n 9 G.K. "T V - LTR U > C v D E S C R IP TIO N RE VISED PER DATE E C R - 1 1- 00 71 43 DWN
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07JUL201
tyco 114-5148
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Untitled
Abstract: No abstract text available
Text: 2 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . RELEASED FOR PUBLICATION JUN 1990- REVISIO N S ALL RIGHTS RESERVED. 1990 By Tyco E le c tro n ic s Japo n G.K. LTR D E S C R IP TIO N REVISED 9 "T A7 — b > v W IRE D PER DATE E C R - 1 1- 00 71 43
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1990ALL
07JUL201
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R 1G H T S 20 LOC CM RESERVED. DIST R E V ISIONS oo LTR DESCRIPTION DATE R E V I S E D P E R E C R - 10 - 0 I 3 3 5 9 A A MATERIAL: HOUSING:
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COPYRIGHT20
07JUL2010
54jjm
2002/95/EC
I9FEB2009
19EEB2009
3IMAR2000
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bucher
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V ISIONS 00 CM RESERVED. LTR DESCRIPTION REVISED A MATERIAL: HOUSING: LCP, CONTACTS : BRASS. FINISH: 2 . 5 4 jjm M I N
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COPYRIGHT20
07JUL2010
2002/95/EC
20FEB2009
20EEB2009
3IMAR2000
bucher
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