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    tr8c

    Abstract: TMS28F200
    Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture


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    TMS28F20 TMS28F200BZB 8-BIT/131072 16-BIT 96K-Byte 128K-Byte 16K-Byte 28F200B2x70 28F200BZX80 28F200BZX90 tr8c TMS28F200 PDF

    cd018

    Abstract: No abstract text available
    Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C


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    JS633 TMS28F033 4194304-BIT 80-PIN 16/32-bit cd018 PDF

    ba qu

    Abstract: TC58F401
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION


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    TC58F400F TC58F401F BITS/262 TC58F400/401 TC58F4 TC58F400) 00000h 01FFFh 02000h ba qu TC58F401 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD PDF

    MSP430

    Abstract: cc cg1 100 278
    Text: MSP430FG42x0 MIXED SIGNAL MICROCONTROLLER SLAS556A − JULY 2007 − REVISED AUGUST 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA


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    MSP430FG42x0 SLAS556A 16-Bit 125-ns 12-Bit MSP430 cc cg1 100 278 PDF

    A29L008

    Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
    Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:


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    A29L008 KbyteX15 SA10 SA11 SA12 SA13 SA14 SA15 SA16 PDF

    MSM66587

    Abstract: P8P10 Q587 MSM66P587 MSM66Q587 TQFP100-P-1414-0 M66P587 P587 TXC1 P12SF
    Text: E2E1033 -27-Y6 Pr el im This version: Jan. 1998 MSM66585/586/587/P587/Q587 ina ry Previous version: Nov. 1996 ¡ Semiconductor MSM66585/586/587/P587/Q587 ¡ Semiconductor Built-in 16 bit PWM and 8 bit A/D Converter, High-speed High-preformance 16 bit Microcontroller


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    E2E1033 -27-Y6 MSM66585/586/587/P587/Q587 MSM66585/586/587/P587/Q587 MSM66585/586/587 16-bit 16bit MSM66P587 MSM66Q587 8/16-bit MSM66587 P8P10 Q587 TQFP100-P-1414-0 M66P587 P587 TXC1 P12SF PDF

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    A29L800

    Abstract: A29L800V
    Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.


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    A29L800 KbyteX15 KwordX15 48TFBGA) A29L800V PDF

    amic a290021t-70

    Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
    Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


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    A29002/A290021 amic a290021t-70 A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV200 8-Bit/128 16-Bit) PDF

    CMP14

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-10134-1E FR 60 32-BIT MICROCONTROLLER MB91470/480 Series HARDWARE MANUAL FR 60 32-BIT MICROCONTROLLER MB91470/480 Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.


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    CM71-10134-1E 32-BIT MB91470/480 32-trol 0000B, 0018H) CMP14 PDF

    AN1995

    Abstract: M25P10-A ufdfpn8
    Text: M25P10-A 1 Mbit, serial Flash memory, 50 MHz SPI bus interface Features • 1 Mbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (1 Mbit) in 1.7 s (typical) ■ 2.3 to 3.6 V single supply voltage


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    M25P10-A 2011h) AN1995 M25P10-A ufdfpn8 PDF

    amd 29F400AB

    Abstract: 29F400AT 29F400AB
    Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    Am29F400AT/Am29F400AB S-Bit/262 16-Bit) 44-pin 48-pin Am29F400AT/Am 29F400AB Am29F400T/Am29F400B 18612B. amd 29F400AB 29F400AT 29F400AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors


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    S29F4O0T-55TC S29F4Q -150T3 S29F400T- 9F400B -150SI S29F400T -150SI AS29F400B-5 S29F400T-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    Am29F200T/Am29F200B 8-BII/131 16-Blt) 44-pin 48-pin Am29F200 PDF

    am29f400b

    Abstract: am29f400bb 22AB AM29F400BT
    Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb 22AB AM29F400BT PDF

    Untitled

    Abstract: No abstract text available
    Text: Z8051 Series 8-Bit Microcontrollers Z51F3220 Product Specification PS029902-0212 PRELIMINARY Copyright 2012 Zilog , Inc. All rights reserved. www.zilog.com Z51F3220 Product Specification ii Warning: DO NOT USE THIS PRODUCT IN LIFE SUPPORT SYSTEMS. LIFE SUPPORT POLICY


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    Z8051 Z51F3220 PS029902-0212 PDF

    TMP86PM23UG

    Abstract: No abstract text available
    Text: 8 Bit Microcontroller TLCS-870/C Series TMP86PM23UG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


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    TLCS-870/C TMP86PM23UG TMP86PM23UG PDF

    AMIC A29001

    Abstract: plcc 32pin A290011UV-70U
    Text: A29001/290011 Series 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue October 19, 2000 0.1 Change ILIT from 50 A to 100μA


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    A29001/290011 XX11h XX03h 32Pin A290011UV-70 A290011TV-70 AMIC A29001 plcc 32pin A290011UV-70U PDF

    Untitled

    Abstract: No abstract text available
    Text: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in


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    28F200BL-T/B, 28F002BL-T/B x8/x16 28F200BL-T, 28F200BL-B 16-bit 32-bit 28F002BL-T, 28F002BL-B 16-KB PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser


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    IS28F002BV/BLV 16-KB IS28F002BVB-80TI 40-pin IS28F002BVT-80TI IS28F002BLVB-120TI IS28F002BLVT-120TI PDF