ebu150
Abstract: No abstract text available
Text: New Product VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode
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VS-EBU15006HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
ebu150
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Untitled
Abstract: No abstract text available
Text: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses
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VT30L60C,
VIT30L60C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
VT30L60C
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package
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VS-EBU15006HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IHLP-1616BZ-A1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite
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IHLP-1616BZ-A1
AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IHLP-1616BZ-A1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite
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IHLP-1616BZ-A1
AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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VFT30L60C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
ITO-220trademarks
2011/65/EU
2002/95/EC.
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VBT30L60C
Abstract: No abstract text available
Text: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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VBT30L60C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
VBT30L60C
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Untitled
Abstract: No abstract text available
Text: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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VBT30L60C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VBT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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VBT4060C
O-263AB
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT4060C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: FP.P www.vishay.com Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Ablestik 84-1 lmis
Abstract: XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis
Text: QRSR9401 QUALIFICATION REPORT ZEROPOWER and TIMEKEEPER SRAM Surface Mounted SNAPHAT Package This document was previously known as QR103. Its purpose is to present the summary of the reliability tests performed to qualify the SNAPHAT housing used for ZEROPOWER and TIMEKEEPER devices
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QRSR9401
QR103.
Ablestik 84-1 lmis
XES-0491
Plastic Valox 420 SEO
M48T08
QR103
QRSR9401
Ablestik 84-1
SUMIKON
lmis
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Untitled
Abstract: No abstract text available
Text: CLA, CLB Vishay Electro-Films Thin Film Eight Resistor Array FEATURES Product may not be to scale • Wire bondable • Eight equal value resistors on a 0.060" x 0.090" chip • Resistance range: 20 Ω to 1 MΩ The CLA and CLB resistor arrays are the hybrid equivalent
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18-Jul-08
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ec 9303
Abstract: No abstract text available
Text: FP.P www.vishay.com Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities
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2002/95/EC
11-Mar-11
ec 9303
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si4554
Abstract: No abstract text available
Text: Si4554DY-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Si4554DY-GE3
AN609,
07-Dec-11
si4554
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TSOP4438
Abstract: TSOP4838 IR receiver remote control transmitter and receiver circuit f
Text: TSOP22., TSOP24., TSOP48., TSOP44. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against EMI
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TSOP22.
TSOP24.
TSOP48.
TSOP44.
2002/95/EC
2002/96/EC
TSOP4438
TSOP4838 IR receiver
remote control transmitter and receiver circuit f
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Untitled
Abstract: No abstract text available
Text: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES P case top P case bottom B and T cases Q, S and A cases • P case offers single-sided lead Pb -free terminations RoHS • Wraparound lead (Pb)-free terminations: Q, S,
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EIA-481-1
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VBT4060C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: New Product VFT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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VFT4060C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 4 2 1”= 1.50 2 ”= 2.50 NOTES: SEE SHEET 2. REVISIONS LTR U1 1”= 1.270 '32.26' 2 ”= 2.270 '57.66' V DESCRIPTION REVISED PER ECO-1 1 - 0051 39 REVISED PER ECO -12 - 0 2 0 9 6 7 DATE APPROVED 20APR11 HMR 07DEC12 CT 2X CABLE CLAMP TYPICAL PLUG AND RECEPTACLE
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20APR11
07DEC12
MTC100â
JH1-R22
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Untitled
Abstract: No abstract text available
Text: 2 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PUBLICATION COPYRIGHT R E V IS IO N S 50 ALL RIGHTS RESERVED. By - LTR D E S C R IP TIO N w R EVISED PER DATE E C R - 1 1-01 806 3 07DEC11 DWN APVD KH PD P D SINGLE OR OPTIONAL DOUBLE PILOT HOLE .0 35
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07DEC11
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - REVISIONS - 50 RESERVED. - LTR AD D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 07DEC11 DWN APVD KH PD D DIM’S IN BRACKETS ARE
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07DEC11
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S U N P U B L IS H E D . 3 RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - 2 .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N REVISED PER DATE E C R - 1 1-01 8 0 6 3 07DEC11 DWN APVD KH PD D 1 CO NTINU O US
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07DEC11
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - 2 - R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N Z RE VISED PER DATE E C R - 1 1-01 8 0 6 3 07DEC11 DWN APVD KH PD 1 .52 1 .27
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07DEC11
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