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    078F Search Results

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    078F Price and Stock

    ROHM Semiconductor BU21078FV-E2

    CAPACITIVE SWITCH CONTROLLER ICS
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    DigiKey BU21078FV-E2 Digi-Reel 3,757 1
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    BU21078FV-E2 Cut Tape 3,757 1
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    Ameya Holding Limited BU21078FV-E2 130 1
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    Avnet Silica BU21078FV-E2 17 Weeks 2,000
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    CoreStaff Co Ltd BU21078FV-E2 1,490
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    NKK Switches AT4078F

    FRAME GREEN FOR AT4077 BUTTON JB
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    DigiKey AT4078F Box 1,000 1
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    Mouser Electronics AT4078F
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    TTI AT4078F Bulk 7
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    Powell Electronics AT4078F 640 1
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    NXP Semiconductors LPC4078FET208K

    IC MCU 32BIT 512KB FLSH 208TFBGA
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    DigiKey LPC4078FET208K Tray 618 1
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    Avnet Americas LPC4078FET208K Tray 13 Weeks 630
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    NXP Semiconductors LPC4078FBD100K

    IC MCU 32BIT 512KB FLASH 100LQFP
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    DigiKey LPC4078FBD100K Tray 609 1
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    Avnet Americas LPC4078FBD100K Tray 13 Weeks 450
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    Mouser Electronics LPC4078FBD100K 809
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    Newark LPC4078FBD100K Bulk 375 1
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    Rochester Electronics LPC4078FBD100K 350 1
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    Chip One Stop LPC4078FBD100K Tray 900
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    Dialight 5151078F

    LIGHT PIPE 3 ELEMENT RJ45
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    DigiKey 5151078F Bulk 296 1
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    TTI 5151078F Bulk 605
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    078F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HITACHI DIODE

    Abstract: HSU276 DSA003636
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F Z Rev. 6 Jul. 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F HITACHI DIODE HSU276 DSA003636 PDF

    Hitachi DSA002789

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F Z Rev 6 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No.


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    HSU276 ADE-208-078F HSU276 Hitachi DSA002789 PDF

    Hitachi DSA002712

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F Z Rev 6 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No.


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    HSU276 ADE-208-078F HSU276 Hitachi DSA002712 PDF

    Untitled

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0141-0700Z Previous: ADE-208-078F Rev.7.00 Nov.10.2003 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.


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    HSU276 REJ03G0141-0700Z ADE-208-078F) HSU276 PDF

    Hitachi DSA00773

    Abstract: HSU276 ADE-208-078F
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F Z Rev 6 June 1996 Features • • High forward current, Low capacitance. Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F Hitachi DSA00773 HSU276 PDF

    HSU276

    Abstract: Hitachi DSA0045
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F Z Rev 6 Jul. 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F HSU276 Hitachi DSA0045 PDF

    HSU276

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0141-0700Z Previous: ADE-208-078F Rev.7.00 Nov.10.2003 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.


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    HSU276 REJ03G0141-0700Z ADE-208-078F) HSU276 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/


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    DS411-00003-1v0-E MB97R803A/B, MB97R804A/B MB97R804A/ PDF

    R14 P1F

    Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
    Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A


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    32-Bit TLCS-900/H1 TMP92CF26AXBG TMP92CF26A TMP92CF26AXBG TMP92CF26A 228-pin R14 P1F N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12 PDF

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T F25L16PA 2S Flash ̈ 16 Mbit Serial Flash Memory with Dual FEATURES „ Single supply voltage 2.7~3.6V „ Standard and Dual „ Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz


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    F25L16PA 50MHz 50MHz 86MHz 100MHz 100MHz 172MHz PDF

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESM T F25L32QA 2S Flash ̈ 32 Mbit Serial Flash Memory with Dual and Quad FEATURES „ „ Single supply voltage 2.65~3.6V Standard, Dual and Quad SPI „ Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz / 86MHz / 104MHz - Fast Read Dual/Quad max frequency: 50MHz / 86MHz /


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    F25L32QA 33MHz 50MHz 86MHz 104MHz 100MHz 172MHz PDF

    AEHF

    Abstract: 80E4A
    Text: O0%BJ0BFG O0E0BE0.0 HGCHGF O0/<780*4A:800"ACHG O06G<I80  O0)4E4?8?0HA6G<BA0+J<G6; O09CN0GB07DN0(C8E4G<BA '80#2,'40').'/43020E11-*%#4*0/3 $8L0&4E>8G0+8:@8AGF040CC?<64G<BAF "A7HFGE<4?0BAGEB?F &BGBE0BAGEB?0+LFG8@F 46GBEL0HGB@4G<BA )EB68FF0BAGEB?80HGB@BG<I88


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    0GB07 /43020E11-* 8AGF040 46GBEL0 EB68FF0 8FG040 84FHE8 8FG80 84GHE8F04A70 AEHF 80E4A PDF

    4GB MLC NAND

    Abstract: SAMSUNG NAND Flash MLC
    Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M 80x11 KFM2G16Q2M) KFN4G16Q2M) 4GB MLC NAND SAMSUNG NAND Flash MLC PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    FAA064

    Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29GL-N S29GL256N, S29GL128N S29GL-N FAA064 SPANSION S29GL128 S29GL128 S29GL-P GL128N GL256N S29GL128N S29GL256N PDF

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: MBM29DS163TE/BE10 Data Sheet Retired Product MBM29DS163TE/BE 10 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    MBM29DS163TE/BE10 MBM29DS163TE/BE DS05-20891-5E F0303 ProductDS05-20891-5E FPT-48P-M19 FPT-48P-M20 PDF

    Untitled

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F 200pF PDF

    Untitled

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 June 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F 200pF 10OjiA PDF

    HAI 7203

    Abstract: ACT8847 74ACT8847 SN74 multiplier
    Text: TEXAS INSTR LOGIC SSE D 0^1723 GQÖS7G3 7 SN74ACT8847 64-Bit Floating Point Unit • Meets IEEE Standard for Single- and DoublePrecision Formats • Performs Floating Point and Integer Add, Subtract, Multiply, Divide, Square Root, and Compare • 64-Bit IEEE Divide in 11 Cycles, 64-Bit Square


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    SN74ACT8847 64-Bit SN74ACT8837 30-ns, 40-ns 50-ns SN74ACT8847 AGT88X7 HAI 7203 ACT8847 74ACT8847 SN74 multiplier PDF

    pin diagram of ic tl062

    Abstract: 078F TL-06S
    Text: TL061, TL061A, TL061B, TL061Y, TL062, TL062A TL062B, TL062Y, TL064, TL064A, TL064B, TL064Y LOW-POWER JFET-INPUT OPERATIONAL AMPLIFIERS SLOSQ78F - NOVEMBER 1978 - REVISED JANUARY 1999 Very Low Power Consumption TL061, TL061A, TL061B D, JG, P, OR PW PACKAGE


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    TL061, TL061A, TL061B, TL061Y, TL062, TL062A TL062B, TL062Y, TL064, TL064A, pin diagram of ic tl062 078F TL-06S PDF

    MSTAR 901

    Abstract: MSTAR 828 dic a700 stk 795 821 GE 8352 MSTAR 309 108 046f 864F 5252 F 0921 XD 5252 F
    Text: fig-FORTH FOR PACE ASSEMBLY SOURCE LISTIN G RELEASE 1 WITH COMPILER SECURITY AND VARIABLE LENGTH NAMES MAY 1979 This public domain publication is provided through the courtesy of the Forth Interest Group, P .O . Box 1105, San Carlos, CA 94070. Further distribution must include this notice.


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