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Laird, A DuPont Business HI1206N800R-10 FERRITE BEAD 80 OHM 1206 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HI1206N800R-10	Cut Tape	77,916		1	1 $0.25 10 $0.172 100 $0.1186 1000 $0.07894 10000 $0.07894	Buy Now
	HI1206N800R-10	Digi-Reel	77,916		1	1 $0.25 10 $0.172 100 $0.1186 1000 $0.07894 10000 $0.07894	Buy Now
	HI1206N800R-10	Reel	75,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05975	Buy Now
Newark	HI1206N800R-10	Reel	15,000		3,000	1 $0.057 10 $0.057 100 $0.057 1000 $0.057 10000 $0.056	Buy Now
	HI1206N800R-10	Cut Tape	8,699		10	1 - 10 $0.192 100 $0.124 1000 $0.104 10000 $0.104	Buy Now
Bristol Electronics	HI1206N800R-10		2,998		23	1 - 10 - 100 $0.1125 1000 $0.0675 10000 $0.045	Buy Now
	HI1206N800R-10		1,066			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sager	HI1206N800R-10		27,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.0663	Buy Now
Infineon Technologies AG SPA06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA06N80C3XKSA1	Tube	11,995		1	1 $2.36 10 $2.36 100 $2.36 1000 $0.89488 10000 $0.89488	Buy Now
Mouser Electronics	SPA06N80C3XKSA1		230			1 $1.95 10 $1.1 100 $0.996 1000 $0.894 10000 $0.894	Buy Now
Newark	SPA06N80C3XKSA1	Bulk	165		1	1 $1.56 10 $1.3 100 $1.03 1000 $0.93 10000 $0.93	Buy Now
Chip One Stop	SPA06N80C3XKSA1	Tube	232			1 $0.873 10 $0.869 100 $0.851 1000 $0.849 10000 $0.849	Buy Now
EBV Elektronik	SPA06N80C3XKSA1		500	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	SPA06N80C3XKSA1		9,100			1 - 10 - 100 $1.0949 1000 $0.8896 10000 $0.8896	Buy Now
Infineon Technologies AG SPP06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XKSA1	Tube	5,570		1	1 $2.81 10 $2.81 100 $2.81 1000 $0.93443 10000 $0.87175	Buy Now
Mouser Electronics	SPP06N80C3XKSA1		1,161			1 $2.02 10 $1.07 100 $1.01 1000 $0.871 10000 $0.871	Buy Now
Rochester Electronics	SPP06N80C3XKSA1		20,858		1	1 $0.8742 10 $0.8742 100 $0.8217 1000 $0.7431 10000 $0.7431	Buy Now
Chip One Stop	SPP06N80C3XKSA1	Tube	476			1 $1.12 10 $0.884 100 $0.863 1000 $0.863 10000 $0.863	Buy Now
Chip-Germany GmbH	SPP06N80C3XKSA1		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	SPP06N80C3XKSA1		87,000	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPP06N80C3XKSA1		69,500		1	1 - 10 - 100 - 1000 $1.46 10000 $1.46	Buy Now
Infineon Technologies AG SPD06N80C3ATMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD06N80C3ATMA1	Digi-Reel	3,969		1	1 $2.67 10 $1.722 100 $2.67 1000 $0.87984 10000 $0.87984	Buy Now
	SPD06N80C3ATMA1	Cut Tape	3,969		1	1 $2.67 10 $1.722 100 $2.67 1000 $0.87984 10000 $0.87984	Buy Now
	SPD06N80C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.81225	Buy Now
Mouser Electronics	SPD06N80C3ATMA1		29,578			1 $1.95 10 $1.25 100 $0.938 1000 $0.829 10000 $0.796	Buy Now
Rochester Electronics	SPD06N80C3ATMA1		255		1	1 $0.8146 10 $0.8146 100 $0.7657 1000 $0.6924 10000 $0.6924	Buy Now
Ameya Holding Limited	SPD06N80C3ATMA1		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	SPD06N80C3ATMA1	Cut Tape	1,798			1 $1.15 10 $0.89 100 $0.865 1000 $0.862 10000 $0.862	Buy Now

EBV Elektronik	SPD06N80C3ATMA1			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPD06N80C3ATMA1		27,996			1 - 10 - 100 $1.0688 1000 $0.8684 10000 $0.8684	Buy Now
Molex 0500798000-06-N8-D 6" PRE-CRIMP 1852 BROWN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0500798000-06-N8-D	Bulk	960		10	1 - 10 $0.728 100 $0.5618 1000 $0.45185 10000 $0.39824	Buy Now

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06N8 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
06n80 Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C	PDF
06N80C3 Abstract: 06N80 Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80	PDF
diode 71A Abstract: SPA06N80C3 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3	PDF
06n80c3 Abstract: SPA06N80C3 Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3	PDF
SMD Transistor g15 Abstract: transistor A25 SMD transistor SMD g15 Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15	PDF
06n80c3 Abstract: JESD22 PG-TO220-3 SPA06N80C3 Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3	PDF
Untitled Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPP06N80C3 PG-TO220-3 06N80C3	PDF
Untitled Abstract: No abstract text available Text: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes	Original	FMH06N80E MS5F07479 H04-004-05 H04-004-03	PDF
06n80c3 Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3 Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3	PDF
06n80c3 Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS	PDF
06n80c3 Abstract: P-TO252 SPD06N80C3 Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3	PDF
06n80 Abstract: Q67040-S4352 06n8 06n80c3 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3	PDF
06n80c3 Abstract: SPP06N80C3 06n80 Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80	PDF
Untitled Abstract: No abstract text available Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3	PDF

Untitled Abstract: No abstract text available Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω 6 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4351 06N80C3	PDF
SMD Transistor g15 Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3 Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3	PDF
06N80 Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80	PDF
TO-252 Abstract: No abstract text available Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
Untitled Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPD06N80C3 PG-TO252-3 06N80C3	PDF
06N80C3 Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	SPA06N80C3 PG-TO220-3 06N80C3 06N80C3	PDF
smd transistor marking 12W Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98 Text: Preliminary data 06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated	Original	SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
SPD06N80C3 Abstract: 06N80C3 P-TO252 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated	Original	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252	PDF

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06N8 Search Results

06N8 Price and Stock

Laird, A DuPont Business HI1206N800R-10

Infineon Technologies AG SPA06N80C3XKSA1

Infineon Technologies AG SPP06N80C3XKSA1

Infineon Technologies AG SPD06N80C3ATMA1

Molex 0500798000-06-N8-D

06N8 Datasheets Context Search

06n80

06N80C3

diode 71A

06n80c3

SMD Transistor g15

06n80c3

Untitled

Untitled

06n80c3

06n80c3

06n80c3

06n80

06n80c3

Untitled

Untitled

SMD Transistor g15

06N80

TO-252

PEF 24628

Untitled

06N80C3

smd transistor marking 12W

BCM 4336

SPD06N80C3