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    20p06hl

    Abstract: 20P06HLG 06HLG ultra low igss MTD20P06HDLT4G d marking code dpak transistor MOSFET dynamic parameters mosfet j 114 P channel Junction FET AN569
    Text: MTD20P06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level P−Channel DPAK http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original
    PDF MTD20P06HDL MTD20P06HDL/D 20p06hl 20P06HLG 06HLG ultra low igss MTD20P06HDLT4G d marking code dpak transistor MOSFET dynamic parameters mosfet j 114 P channel Junction FET AN569

    20n06hl

    Abstract: 06hlg 20n-06hl 20n06 20N06H MTD20N06HDLT4 AN569 MTD20N06HDL MTD20N06HDLT4G
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original
    PDF MTD20N06HDL MTD20N06HDL/D 20n06hl 06hlg 20n-06hl 20n06 20N06H MTD20N06HDLT4 AN569 MTD20N06HDL MTD20N06HDLT4G

    20n06hl

    Abstract: 06HLG 20n-06hl 20n06 AN569 MTD20N06HDL MTD20N06HDLT4 MTD20N06HDLT4G DIODE y 12 transistor code 458 055
    Text: MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original
    PDF MTD20N06HDL MTD20N06HDL/D 20n06hl 06HLG 20n-06hl 20n06 AN569 MTD20N06HDL MTD20N06HDLT4 MTD20N06HDLT4G DIODE y 12 transistor code 458 055