SiA929DJ
Abstract: No abstract text available
Text: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual
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SiA929DJ
SC-70-6
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET
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SiA411DJ
SC-70
SC-70-6L-Single
SiA411DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SIA456DJ
Abstract: No abstract text available
Text: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA456DJ
SC-70
SC-70-6L-Single
SiA456DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21
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SiB404DK
SC-75
2002/95/EC
SC-75-6L-Single
SiB404DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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marking code vishay SILICONIX
Abstract: SIA915DJ
Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA915DJ
SC-70
2002/95/EC
SC-70-6
SiA915DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code vishay SILICONIX
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SIA461DJT1GE3
Abstract: 63838 sia461djt
Text: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package
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SiA461DJ
SC-70
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIA461DJT1GE3
63838
sia461djt
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SiA445EDJ
Abstract: SIA445EDJ-T1-GE3
Text: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single
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SiA445EDJ
SC-70-6L-Single
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIA445EDJ-T1-GE3
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Untitled
Abstract: No abstract text available
Text: New Product SiA462DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC • TrenchFET Power MOSFET • 100 % Rg Tested
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SiA462DJ
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area
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SiA400EDJ
SC-70
SC-70-6L-Single
SiA400EDJ-T1-GE3electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: GUR5H60, GURF5H60 & GURB5H60 Vishay General Semiconductor Ultrafast Rectifier FEATURES ITO-220AC TO-220AC • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability 2 2 1 1 GUR5H60
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GUR5H60,
GURF5H60
GURB5H60
ITO-220AC
O-220AC
GUR5H60
O-220AC
ITO-220AC
O-263AB
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Untitled
Abstract: No abstract text available
Text: New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 4.5 0.063 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA906EDJ
SC-70
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA923EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21
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SiA923EDJ
SC-70
2002/95/EC
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA777EDJ Vishay Siliconix N- and P-Channel for Level Shift Load Switch FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2800 V P-Channel 1900 V • 100 % Rg Tested
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SiA777EDJ
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single
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SiA449DJ
SC-70-6L-Single
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SMMB411DK Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow - 20 RDS(on) (Ω) at VGS = - 4.5 V 0.066 RDS(on) (Ω) at VGS = - 2.5 V 0.094 RDS(on) (Ω) at VGS = - 1.8 V
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SMMB411DK
SC-75-6L-Single
SC-75
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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mosfet 4800
Abstract: SUB75N06-08
Text: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB75N06-08
S-71502Rev.
06-Aug-07
mosfet 4800
SUB75N06-08
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SiA427DJ
Abstract: SiA427DJ-T1-GE3 SIA427DJ-T1
Text: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA427DJ
SC-70
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiA427DJ-T1-GE3
SIA427DJ-T1
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Untitled
Abstract: No abstract text available
Text: New Product BYD33DGP thru BYD33MGP Vishay General Semiconductor Avalanche Glass Passivated Junction Fast Switching Rectifier FEATURES • Cavity-free glass-passivated junction • Avalanche surge capability guaranteed • Fast reverse recovery time • Low switching losses, high efficiency
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BYD33DGP
BYD33MGP
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
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SUP85N15-21
Abstract: sup85n15 SUP85N15-21-E3
Text: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch
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SUP85N15-21
O-220AB
SUP85N15-21-E3
08-Apr-05
SUP85N15-21
sup85n15
SUP85N15-21-E3
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VPR220SZ
Abstract: No abstract text available
Text: VPR220SZ Z-Foil Vishay Foil Resistors Ultra High Precision Z-Foil Surface Mount Power Resistors in TO-220 Configuration with TCR of ± 0.05 ppm/°C, Tolerance to ± 0.01 % and Power Rating to 8 W FEATURES • Temperature Coefficient of Resistance (TCR):
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VPR220SZ
O-220
MIL-PRF-39009)
08-Apr-05
VPR220SZ
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FES8JT-E3/45
Abstract: JESD22-B102D J-STD-002B FES8GT fesf8jt-e3 FES8AT
Text: FES F,B 8AT thru FES(F,B)8JT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction ITO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current 2 1 FES8xT • High forward surge capability
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O-220AC
ITO-220AC
J-STD-020C,
O-263AB
ITO-220AC
2002/95/EC
2002/96/EC
O-263AB
08-Apr-05
FES8JT-E3/45
JESD22-B102D
J-STD-002B
FES8GT
fesf8jt-e3
FES8AT
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BA157GP
Abstract: BA159GP DO-204AL JESD22-B102D J-STD-002B
Text: BA157GP thru BA159GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed*
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BA157GP
BA159GP
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
BA159GP
DO-204AL
JESD22-B102D
J-STD-002B
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Untitled
Abstract: No abstract text available
Text: 4 TH IS D R A W IN G IS 2 U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY ^C O ELECTRONICS P U B LIC A TIO N R IG H TS - - R E V IS IO N S RESERVED. G CORPORATION. LT R E2 D E S C R IP T IO N REVISED PER ECR 0 7 - 0 2 2 9 3 2 D APVD JR CLIPPER PER ASTM B152
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26SEP07
06AUG07
30AUG07
31MAR2000
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