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    060N10NS Search Results

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    060N10NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC060N10NS3GATMA1

    MOSFET N-CH 100V 14.9/90A 8TDSON
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    DigiKey BSC060N10NS3GATMA1 Reel 5,000
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    Avnet Americas BSC060N10NS3GATMA1 Ammo Pack 16 Weeks, 3 Days 1
    • 1 $2.58
    • 10 $2.14
    • 100 $1.71
    • 1000 $1.71
    • 10000 $1.71
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    Mouser Electronics BSC060N10NS3GATMA1 17,165
    • 1 $2.31
    • 10 $1.55
    • 100 $1.11
    • 1000 $0.951
    • 10000 $0.806
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    Newark BSC060N10NS3GATMA1 Cut Tape 7,357 1
    • 1 $1.23
    • 10 $1.23
    • 100 $1.23
    • 1000 $1.19
    • 10000 $1.19
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    BSC060N10NS3GATMA1 Reel 5,000
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    Rochester Electronics BSC060N10NS3GATMA1 53,701 1
    • 1 $0.8308
    • 10 $0.8308
    • 100 $0.781
    • 1000 $0.7062
    • 10000 $0.7062
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    Chip One Stop BSC060N10NS3GATMA1 Cut Tape 20,486 0 Weeks, 1 Days 1
    • 1 $1.05
    • 10 $0.895
    • 100 $0.868
    • 1000 $0.865
    • 10000 $0.865
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    EBV Elektronik BSC060N10NS3GATMA1 180,000 17 Weeks 5,000
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    New Advantage Corporation BSC060N10NS3GATMA1 145,000 1
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    Vyrian BSC060N10NS3GATMA1 37,378
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    Win Source Electronics BSC060N10NS3GATMA1 48,580
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    • 100 $0.7319
    • 1000 $0.5667
    • 10000 $0.5667
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    Infineon Technologies AG BSC060N10NS3GXT

    Power MOSFET, N Channel, 100 V, 105 A, 6 mOhm, TDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC060N10NS3GATMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BSC060N10NS3GXT Reel 10,000 16 Weeks 5,000
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    Vyrian BSC060N10NS3GXT 14,600
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    Infineon Technologies AG BSC060N10NS3 G

    MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC060N10NS3 G 28,436
    • 1 $2.15
    • 10 $1.49
    • 100 $1.18
    • 1000 $1.14
    • 10000 $1
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    CoreStaff Co Ltd BSC060N10NS3 G 4,143
    • 1 $3.771
    • 10 $1.986
    • 100 $1.454
    • 1000 $1.414
    • 10000 $1.414
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    Win Source Electronics BSC060N10NS3 G 50,804
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    • 100 $0.7319
    • 1000 $0.5667
    • 10000 $0.5667
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    Infineon Technologies AG BSC060N10NS3G

    Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA BSC060N10NS3G 693
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    Vyrian BSC060N10NS3G 16,789
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    Infineon Technologies AG BSC060N10NS3GATMA1/SAMPLE

    Transistors
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    Vyrian BSC060N10NS3GATMA1/SAMPLE 267
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    060N10NS Datasheets Context Search

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    060N10NS

    Abstract: BSC060N10NS3 G BSC060N10NS3 JESD22 V7-V100 060N10
    Text: 060N10NS3 G OptiMOS 3 Power-Transistor Product Summary Features V DS • Very low gate charge for high frequency applications • Optimized for dc-dc conversion 100 V R DS on ,max 6 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC060N10NS3 060N10NS 060N10NS BSC060N10NS3 G JESD22 V7-V100 060N10 PDF

    060N10NS

    Abstract: BSC060N10NS3 G BSC060N10NS3 IEC61249-2-21 JESD22
    Text: 060N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • Very low gate charge for high frequency applications R DS on ,max 6 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level 100 V PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original
    BSC060N10NS3 IEC61249-2-21 060N10NS 060N10NS BSC060N10NS3 G IEC61249-2-21 JESD22 PDF