Untitled
Abstract: No abstract text available
Text: DSD0.8-05B Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage500 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)3.0
|
Original
|
8-05B
Voltage500
Time300n
|
PDF
|
DIODE T4 3560
Abstract: T4 3560 B ixys VBH 40-05B T4 3560 6 diode bridge 2170
Text: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V RDSon = 116 m Ω VRRM = 1200 V IDAV25 = 90 A Preliminary data pin configuration see outlines Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A
|
Original
|
40-05B
IDAV25
IFAV25
IFAV80
DIODE T4 3560
T4 3560 B
ixys VBH 40-05B
T4 3560 6
diode bridge 2170
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • fl235b05 D D A1 57 5 05b I SIEMENS PROFET B T S 4 1 0 F 2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection
|
OCR Scan
|
fl235b05
BTS410F2
6235b05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International Is ] Rectifier 4055452 0015530 INR PD-9458C IRFP450 INTERNATIONAL HEXFET® P o w e r M O S F E T • • • • • • 05b bSE RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
|
OCR Scan
|
PD-9458C
IRFP450
|
PDF
|
0DQ154Q
Abstract: No abstract text available
Text: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il
|
OCR Scan
|
0DQ154Q
IXSN50N120AU1
OT-227
|
PDF
|
GSC78L05
Abstract: No abstract text available
Text: ISSUED DATE :2004/02/18 REVISED DATE :2004/10/05B GSC78L05 Description The GSC78L05 of surface mount device regulator is easy-to-use device suitable for multitude of applications that require a regulated supply of up to 100mA. The regulator feature internal current limiting and thermal shutdown making them remarkably rugged. No external
|
Original
|
2004/10/05B
GSC78L05
GSC78L05
100mA.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA BRIGHT RED SOLID STATE LAMPS MEMUM TPRÖFILE 4.60 FLANGELESS „ LITEm LTL-10263W TAIWAN LI TON ELECTRONIC 4 ^ E j> flfl3Sfa«?5 0003431 05b • T L I T FEATURES • • • • • U L T R A BRIGHTNESS. NEW S T U R D Y LEADS. 1C CO M PATIBLE/LO W CURRENT
|
OCR Scan
|
LTL-10263W
LTL-10263W
0263W
|
PDF
|
siemens igbt BSM 150 gb 100 d
Abstract: siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a
Text: bOE D • fl23Sfc.QS G G 4 5 Ô 7 2 05b « S I E G SIEMENS S IE H E N S A K T IE N 6 E S E L L S C H A F T ' & ' - a f BSM 100 GB 100 D BSM100 GAL 100 D IGBT Module Preliminary Data v CE = 1000 v / c = 2 x 1 3 5 A at Tc = 2 5 C I c = 2 x 100 A at r c = 80 C
|
OCR Scan
|
23SLGS
2x135
BSM100
C67076-A2103-A2
C67076-A2004-A2
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 150 Gb 160 d
siemens igbt BSM 100 gb
DDMS677
GG45
SIEMENS VF 100
200AH
tt200a
|
PDF
|
5SGS 12F2500
Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
Text: 5SGS 12F2500 5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630
|
Original
|
12F2500
1768/138a,
TG/164/05b
Mar-12
5SGS 12F2500
ABB Typ RGC
ITGQM
GTO thyristor ABB
|
PDF
|
varistor ENC series ENC471
Abstract: varistor ENC 471 ENC431 varistor ENC series enc471 ENC221 vaRistor ENC271 VARISTOR enc431 varistor ENC241 VARISTOR ENC431D-14A
Text: FUJI Z-TRAP ENC SERIES Transient Suppressors General description FUJI'S ceramic surge absorbers are designed to protect low voltage electronic devices such as semiconductors from the effects of destructive voltage transients. The Z-TRAP ENC series are widely used
|
OCR Scan
|
--14A
varistor ENC series ENC471
varistor ENC 471
ENC431
varistor ENC series
enc471
ENC221 vaRistor
ENC271 VARISTOR
enc431 varistor
ENC241 VARISTOR
ENC431D-14A
|
PDF
|
hitachi rectifier U05B
Abstract: U05E Diode U05B U05B U05C U05G U05J 1S2455 diode 2458 V180
Text: T TYPE •FEATURES UP TO 800V 4.0A RMS DIODE OUTLINE DRAWING • Optimum to serve as power supply rectifier for general apparatus, especially for large-sized color television sets, video tape recorders and stereo equipments. 1.2 • Employing Hitachi's unique glass encapsulation
|
OCR Scan
|
U05Brd
10msec
10msec,
hitachi rectifier U05B
U05E
Diode U05B
U05B
U05C
U05G
U05J
1S2455
diode 2458
V180
|
PDF
|
UDT26A05
Abstract: No abstract text available
Text: UDT26A05L05 DESCRIPTION UDT26A05L05 are surge rated diode arrays designed to protect high speed data interfaces.This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge ESD ,electrical fast transients (EFT),
|
Original
|
UDT26A05L05
UDT26A05L05
IEC61000-4-2
OT-26
MIL-883E
15-Sep-11
UDT26A05
|
PDF
|
udt26a05l05
Abstract: No abstract text available
Text: UDT26A05L05 DESCRIPTION UDT26A05L05 are surge rated diode arrays designed to protect high speed data interfaces.This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by electrostatic discharge ESD ,electrical fast transients (EFT),
|
Original
|
UDT26A05L05
UDT26A05L05
IEC61000-4-2
OT23-6L
MIL-883E
07-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: sem ikrdn V rsm Ifrm s m a xim u m valu e for continuous operation V r rm 400 A Ifa v (sin. 180; Tcass = 85 °C; 50 Hz) SKKD 170 M 170 A V 1500 SKKD 170 M 15 1700 SKKD 170 M 17 1900 SKKD 170 M 19 2400 SKKD 170 M 24 Symbol Conditions SEMIPACK 3 Fast Diode Modules
|
OCR Scan
|
KD170Mt5
KD170M4?
KD17QM17
KD170M19
KD170M1S
|
PDF
|
|
|
OPC216
Abstract: No abstract text available
Text: 0OPTEK P roduct B ulletin OPC216 Ju ly 1996 GaAIAs Infrared Emitter Chip Type OPC216 .0171.43 . 01S(. i 8) DIMENSIONS HE IK IICHES(HILLIHETERS) P-S10E B im HETAL ALLOY CONTACT ENTIBE SURFACE Features A b so lu te M aximum Ratings*1' (Ta = 25° C unless otherwise noted)
|
OCR Scan
|
OPC216
OPC216
OPC216VP
OPC216TP
0QD273Q
|
PDF
|
MCA0616/1
Abstract: T-120-01B Skynet Electronic
Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology
|
Original
|
MIL-PRF-19500
QR216,
QR217
FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
MCA0616/1
T-120-01B
Skynet Electronic
|
PDF
|
2809b
Abstract: No abstract text available
Text: 1N 2804 thru 1N 2846B and 1N 45 57 B thru 1N 4564B SCOTTSDALE, A Z SANTA ANA, CA F o r m ore info rm atio n cali: 602 941-6300 FE A T U R E S SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %
|
OCR Scan
|
2846B
4564B
00G3770
2809b
|
PDF
|
s2555
Abstract: No abstract text available
Text: Preliminary data v Low i_ w r v v V * C E s a t High speed IGBT with Diode CES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V ^C 25 50 A 50 A v ¥ CE (sat) 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test C onditions v CES J j = 25°C to 150°C 1000 V v CGR Td = 25°C to 150°C; RGE = 1 MO
|
OCR Scan
|
IXGH25N100U1
IXGH25N100AU1
O-247
XGH25N1Ô
s2555
|
PDF
|
470D10
Abstract: 470d14 561D20 220D14 270d14 471D14 270D10 220d10 220D-10B 561d10
Text: CERAMIC SURGE ABSORBERS VARISTORS SVC SVC CHARACTERISTIC CURVES V-Ⅰ CURVE Small - current region of V - Ⅰ curve Temporary power frequency over voltage capability B TYPE Withstand discharge impulse current characteristics (Typical) A TYPE Withstand discharge impulse current characteristics (Typical)
|
Original
|
50/60Hz
50/60Hz
470D10
470d14
561D20
220D14
270d14
471D14
270D10
220d10
220D-10B
561d10
|
PDF
|
SM1100J
Abstract: sm1100jy SM1100JE-K-10 SM1145J SM1100JS SM1100JV SM1100JP
Text: pie PIctronic/Inc. 19013 36th Ave. West • Suite H • Lynnwood, WA 98036, USA SM1100J SURFACE MOUNT OSCILLATORS IN PLASTIC PACKAGE STANDARD SPECIFICATIONS: Frequency Range Frequency Stability over Operating Temperature Range Operating Temperature Range 1.500 M H z-125.000 MHz
|
OCR Scan
|
SM1100J
z-125
to-40
390ohm
36thAve.
D0Q01SS
SM1100J
sm1100jy
SM1100JE-K-10
SM1145J
SM1100JS
SM1100JV
SM1100JP
|
PDF
|
dc chopper circuit
Abstract: DC chopper dc to dc chopper DIODE B12 CHopper DC M206 vce 1200 and 5 amps transistor diode chopper power transistor motor control wheel
Text: 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s fo r D C c h o p p e r • P o w er transistors and free w h e e ls are b uilt into one package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter D k v k ; h ly p u I Vcso
|
OCR Scan
|
1DI50K
DI75E
1DI75I
1DI200t-ObÃ
1DI200K
10pper
1DI50L
1DI501-
1DI50H-120
1DI75F-120
dc chopper circuit
DC chopper
dc to dc chopper
DIODE B12
CHopper DC
M206
vce 1200 and 5 amps transistor
diode chopper
power transistor motor control
wheel
|
PDF
|
semikron SK 50 DB 100 D
Abstract: No abstract text available
Text: SIE D Ö13bb71 GÜG3ÖDD 11T S EM IK R O N SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = - 2 V Values > CM I II III m > VcEV Units 1200 V 1200 V V VCBO Ie = 0 1200 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - l c
|
OCR Scan
|
13bb71
11iti;
fll3bb71
T-33-35
semikron SK 50 DB 100 D
|
PDF
|
K1643
Abstract: 2SK1643
Text: TOSHIBA 2SK1643 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 643 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. U n it in mm • Low Drain-Source ON Resistance
|
OCR Scan
|
2SK1643
K1643
2SK1643
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 GÜ1220B 4GG « S U G K N-CHANNEL POWER MOSFETS bME D IRF710/711/712/713 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysillcon gate cell structure Lower input capacitance
|
OCR Scan
|
1220B
IRF710/711/712/713
IRF710
IRF711
IRF712
IRF713
|
PDF
|
