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    Untitled

    Abstract: No abstract text available
    Text: ADV MI CRO MEMORY 4ÛE D n 05S7S5Ô QQaGSbS t> • AMD4 T—4 6 —1 3 -2 5 Am27X128 Advanced Micro Devices 16,384 X 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed


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    PDF 05S7S5Ã Am27X128 KS000010 0205-005A

    10L8

    Abstract: 12L6 27127S 16C1 pin shourd 14L4 PAL10H8 4h4 1 16L2 PAL12H6
    Text: ADV MI CRO P L A / P L E / A R R A Y S =ib U2 b 7526 ADV M IC R O P L A / P L E / A R R A Y S D E | 05S7S5b 0057114 7 T ~ 96D 27114 D T - V 6-/3- V 7 Com binatorial PALI 0H8 Series 1 0 H 8 ,1 2 H 6 , 1 4 H 4 ,1 6 H 2 16C1 1 0 L 8 , 1 2 L 6 , 1 4L4-, 1 6 L 2


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    PDF 05S7S5b U2b7526 PAL10H8 P10H8 24252t T-46-13-47 2121303t 025752b I11711II 10L8 12L6 27127S 16C1 pin shourd 14L4 4h4 1 16L2 PAL12H6

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY a Enhanced Am486 Microprocessor Family Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Complete 32-Bit Architecture • High-Performance Design — Improved cache structure supports industrystandard write-back cache — Frequent instructions execute in one clock


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    PDF Am486Â 32-Bit 80-million 128-million Am486 208-Pin Am386,

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current


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    PDF Q257S2Ã 0D304Ã Am27C2048 16-Bit) -40-pin 44-pin D257S2Ã D03DMn 05-006B

    am29f010

    Abstract: No abstract text available
    Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands


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    PDF Am29F010 32-pin Am29F040 02S7S2A

    g030bl

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MÖE » DE5752Ö a 0 3 D b l D 7 • AMDM T—46—13—25 Advanced Micro Devices A m 27X1024 1 Megabit <65,536 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming


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    PDF DE5752Ã 27X1024 16-Bit) KS000010 0205-005A Am27X1024 g030bl

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


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    PDF GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC

    ZDA16

    Abstract: 15452-005B
    Text: ADV MI C RO MEMORY MöE D • 025752Û Preliminary GG30S1S 2 ■ AMDM T - 4 6 - 1 3 -2 9 * Advanced A m 2 7 C 4 0 0 M ic r o 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) ROM Compatible CMOS EPROM Devices DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time


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    PDF GG30S1S T-46-13-29 Am27C400 8-Bit/262 16-Bit) 40-pin I27C400 G25752Ã T-46-13-29 14971-006B ZDA16 15452-005B

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY COM’L: -7/10/12/15/20 Z I Advanced Micro Devices M A C H 1 3 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 7.5 ns tpo


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    PDF PAL26V16â MACH130, MACH230, MACH435 MACH130 MACH131 PAL22V10 84-Pin 055755L. MACH131-7/10/12/15/20

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current


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    PDF 32-Pin Am28F020A

    DE45 diode

    Abstract: de45 PALC20RA10Z PALC20RA10Z-40 PALC20RA10 DE-45
    Text: AOV MICRO P L A / P L E / A R R A Y S 13E D | O S ST SS b 00500.24 0 | J l PALC20RA10Z-40/45 CMOS Programmable Array Logic Zero Standby Power/Electrically Erasable/Asynchronous ZPAL Device U > I- DISTINCTIVE CHARACTERISTICS o o io • • • • • Registers can be bypassed Individually


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    PDF PALC20RA10Z-40/45 02S7SHfc, 0Qafl03b 24-Pln 28-Pin DE45 diode de45 PALC20RA10Z PALC20RA10Z-40 PALC20RA10 DE-45

    ATN209

    Abstract: ci 7515
    Text: ADV MI CRO TELECOM 5ÖE D 0257557 0 0 2 7 c150 2 r-7 sr-/s- Preliminary a Am2091 Advanced Micro Devices ISDN Echocancellation Circuit (IEC-Q) DISTINCTIVE CHARACTERISTICS • Full duplex data transm ission and reception at the U reference point according to the Layer 1


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    PDF 68-MHz Am2091 PD024 T-75-15 PD040 --------------------002f PL044 ATN209 ci 7515

    Untitled

    Abstract: No abstract text available
    Text: P R ELIM IN A R Y Am79C961 PCnet -ISA+Jumperless Single-Chip Ethernet Controller for ISA Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Industry Standard Architecture ISA and Extended Industry Standard Architecture (EISA) buses


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    PDF Am79C961 Am7990 10BAstored 10xxx D15-D0 18183B-57 XXC56

    Untitled

    Abstract: No abstract text available
    Text: F IN A L COM ’L : -15/20 IN D :-18/24 a M A C H Advanced Micro Devices L V 2 1 0 -1 5 /2 0 High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC compatible ■ 50 MHz 40 MHz — V Cc = +3.0 V to +3.6 V


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    PDF PAL22V16â MACH210 HLV210-15/20 0S5752t

    Untitled

    Abstract: No abstract text available
    Text: MICRO IME MEMORY O § 0ES7S5Ö Q0S7137 C67401 C67401A C67402 C67402A Advanced Micro Devices First-In First-Out FIFO 64x4, 64x5 Cascadable Memory DISTINCTIVE CHARACTERISTICS 3 | ORDERING INFORMATION . • Choice of 15 and 10 MHz shlft-out/shift-ln rales Part


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    PDF Q0S7137 C67401 C67401A C67402 C67402A C67401 C67402 PL020 C67402A

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY a A m 2 9 F 1 0 0 T /A m 2 9 F 1 OOB 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ±1 0 % write and erase, read — Minimizes system level power requirements


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    PDF 8-Bit/65 16-Bit) 44-pin 48-pin CP-10 3M-8/94-0

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D MICRO D E V I C E S 4ÔE D • 0257525 D ü m b i i " T AMD 80EC287 Enhanced 80-Bit CMOS Math Coprocessor - ^ - iz -d s Ô ■ AUDI a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • • • • • Pin compatible and functionally equivalent to


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    PDF 80EC287â 80-Bit 12-MHz 44-pin 40-pin 80-blt 80C286- 80286-based 80EC287 1959-006A

    laf 0001

    Abstract: laf 0001 power am79c960 errata "Attachment Unit Interface" lsi MICRON 63T 10BASE 386DX AIT179C90 Z8000 Supply Control LAF 0001
    Text: P R E L IM IN A R Y a Am79C90 Advanced Micro Devices CMOS Local Area Network Controller for Ethernet C-LANCE DISTINCTIVE CHARACTERISTICS • Com patible w ith Ethernet and IEEE 802.3 10BASE 5 T ype A, and 10BASE 2 Type B, “C heapernet,” 10BASE-T


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    PDF Am79C90 10BASE 10BASE-T 80x86 680x0, Am29000 Z8000â 64-byte 48-byte laf 0001 laf 0001 power am79c960 errata "Attachment Unit Interface" lsi MICRON 63T 386DX AIT179C90 Z8000 Supply Control LAF 0001