10358
Abstract: U3665M U3666M U3666M-MDP U3666M-MFP
Text: U3666M Baseband Delay Line 64 ms Improved Version of U3665M Application In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs Description The integrated delay line circuit U3666M is suitable for
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U3666M
U3665M)
U3666M
U3666M,
D-74025
05-Mar-01
10358
U3665M
U3666M-MDP
U3666M-MFP
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Si1417EDH
Abstract: s0318
Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS
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Si1417EDH
SC-70
OT-363
SC-70
S-03187--Rev.
05-Mar-01
s0318
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MARKING BB SOT363
Abstract: Si1417EDH
Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS
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Si1417EDH
SC-70
OT-363
SC-70
18-Jul-08
MARKING BB SOT363
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Si1913EDH
Abstract: No abstract text available
Text: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS
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Si1913EDH
SC-70
OT-363
SC-70
18-Jul-08
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Si1912EDH
Abstract: s0317
Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS
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Si1912EDH
SC-70
OT-363
SC-70
18-Jul-08
s0317
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GL24C
Abstract: 335 35K A5009 IEC-947-5-1 AC15 A600
Text: GL SERIES CHART 1 SIDE ROTARY 6,5 ,26 Y 3,2 .13 Z X 70,00 MAX 2,756 38,1 1,50 GLZ54J: 200,00 / 7.870 MAX GLZ54K: 140,00 / 5.510 MAX ALUMINUM ROD 20,0 ,79 4 102,9 4,05 62,0 2,44 GLZ54J: 201,5 / 7.93 GLZ54K: 141,0 / 15.56 82,0 3,23 60,0 2,36 75,8 2,99 7,3 ,29
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GLZ54J:
GLZ54K:
GLZ51A
GLZ51B
GLZ51C
GLZ51Y
GLZ51T
GLZ51
GL24C
335 35K
A5009
IEC-947-5-1 AC15 A600
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SUD40N02-08
Abstract: ON4030
Text: SUD40N02-08 New Product Vishay Siliconix N-Channel 20-V D-S , 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0085 @ VGS = 4.5 V 40 0.014 @ VGS = 2.5 V 40 VDS (V) 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N02-08 S N-Channel MOSFET
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SUD40N02-08
O-252
S-03182--Rev.
05-Mar-01
SUD40N02-08
ON4030
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Si1913EDH
Abstract: No abstract text available
Text: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS
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Si1913EDH
SC-70
OT-363
SC-70
S-03175--Rev.
05-Mar-01
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s0317
Abstract: Si1912EDH
Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS
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Si1912EDH
SC-70
OT-363
SC-70
08-Apr-05
s0317
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Untitled
Abstract: No abstract text available
Text: Si1563DL New Product Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY rDS on (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V
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Si1563DL
SC-70
OT-363
SC-70
S-03177--Rev.
05-Mar-01
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Si1912EDH
Abstract: No abstract text available
Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS
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Si1912EDH
SC-70
OT-363
SC-70
S-03176--Rev.
05-Mar-01
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Si4850EY
Abstract: No abstract text available
Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4850EY
S-03183--Rev.
05-Mar-01
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Untitled
Abstract: No abstract text available
Text: Si1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = –4.5 V –3.3 APPLICATIONS
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Si1417EDH
SC-70
OT-363
SC-70
08-Apr-05
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SI1563EDH
Abstract: MARKING CODE EA "MARKING CODE EA"
Text: Si1563EDH New Product Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY rDS on (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V
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Si1563EDH
SC-70
OT-363
SC-70
S-03177--Rev.
05-Mar-01
MARKING CODE EA
"MARKING CODE EA"
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10358
Abstract: U3661 U3661M U3665M U3665M-MDP U3665M-MFP
Text: U3665M Baseband Delay Line 64 ms Improved Version Application In TV sets, the integrated baseband delay line circuit is suitable for decoders with color-difference signal outputs Description The integrated delay line circuit U3665M is suitable for all chroma decoders with baseband color-difference
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U3665M
U3665M
U3665M,
D-74025
05-Mar-01
10358
U3661
U3661M
U3665M-MDP
U3665M-MFP
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Untitled
Abstract: No abstract text available
Text: &ELÉA SED F O R AuBUCATION THIS D^AWINÒ IS UNPÜBLISHEÜ. g COPYRIGHT 20 BY AMP INCORPORATED. ,20 . DIST LOC R E V ISIO N S *2 ALL RIGHTS RESERVED. p J D OWN APVD 05MAR01 T.H M.S DESCRIPTION LTR REVISED E E DATE FJ00-0392-01 11APR 03 M(REVISED)FJDO-0094-03
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05MAR01
FJ00-0392-01
11APR
FJDO-0094-03
23FEB95
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 DESCRIPTION LTR DATE REV PER ECN O UBO -O I3 3 -0 1 05MAR01 OWN APVD DEH FA D D W H ITE W H ITE STRIPE- S T R IP E
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05MAR01
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPU BLISH ED . C COPYRIGHT 2 0 R E l E a S E B PtoR P u B l i ò a T iò n BY AMP INCORPORATED. DIST LOC R E V IS IO N S SES J ALL RIGHTS RESERVED. LTR D DESCRIPTION REVISED DATE FJOO— 0 3 9 2 — 01 DWN APVD T. H M.S 05MAR01 D D CIRCUIT NO
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05MAR01
CUL94V-0
23FEB95
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W399
Abstract: No abstract text available
Text: THIS b fW lN G IS UNPUBLISH^Ò. ç COPYRIGHT 20 .,zö " " R E C B B E B T o r p u ó u c a ììò n SY AMP INCORPORATED. . LOC ALL RIGHTS RESERVED. □1ST R E V IS IO N S SZ J _ DESCRIPTION LTR REVISED ^ DATE F JO0-0 392-01 OWN APVD 05MAR01 T.H M.S 11APR
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05MAR01
11APR
FJDO-0094-03
W399
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Si1912EDH
Abstract: No abstract text available
Text: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated
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SM912EDH
SC-70
OT-363
SC-70
Conduction25°
S-03176--
05-Mar-01
1912EDH
05-Mar-01
Si1912EDH
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Untitled
Abstract: No abstract text available
Text: REV # 4-40 DATE DESCRIPTION A 25-JUL-a EC N 0285 B 27-JL-ffl ECN 0286 APP CAPTIVE SCREW 0. •0.984 [ 2 4 .9 9 ] I 0.03 [0.76] I -0.413 [10.49] 1 0 ,6 5 7 [16,69] & i_ — 0.214 [ 5 .4 3 ] 4 -4 0 UNC THREAD 1-0.346 [8.79] 1.311 [3 3 .3 0 ] 0.185 [4.70] 0.235 [ 5 .9 7 ] # 4-40 HEX EXTENDER
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25-JUL-a
27-JL-ffl
CUL94HB5
9F09F001
20109F09F003
9F09FO
05-MAR-01
PERHE551DN.
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s0318
Abstract: sot363 marking qs
Text: SÌ1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) -1 2 • TrenchFET Power MOSFETS: 1,8-V Rated • ESD Protected1 . 3000 V • Thermally Enhanced SC-70 Package I d (A ) rDS(on>(ß) 0.085 @ V GS = -4 .5 V
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1417EDH
SC-70
OT-363
SC-70
S-03187--
05-Mar-01
SM417EDH
s0318
sot363 marking qs
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LD 25 V
Abstract: SM410
Text: SÌ1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) Id (A) * D S (o n ) ( ^ ) 20 • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.070 @ V GS = 4.5 V
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1410EDH
SC-70
OT-363
SC-70
S-03185--
05-Mar-01
LD 25 V
SM410
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Untitled
Abstract: No abstract text available
Text: SÌ1413EDH New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY Vd s (V) -2 0 • TrenchFET Pow er M O S FE T S : 1.8-V Rated • E S D Protected: 3000 V • Thermally Enhanced SC -70 Package Id (A) r DS(on) (Q) 0.115 @ V G S = -4 .5 V
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1413EDH
OT-363
SC-70
S-03186--
05-Mar-01
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