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    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS R DS on = 3 5 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current at Tamb=25°C •d 90 mA Pulsed Drain Current


    OCR Scan     		PDF cH7Q57Ã 0Q1Q354 001G35S

    BF492

    Abstract: No abstract text available
    Text: bGE ZETEX D • TÎ7GS7Û 0007504 ÖOS « Z E T B SEMI CONDUCTORS PIMP Silicon Planar High Voltage Transistors BF491 BF492 BF493 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low


    OCR Scan     		PDF BF491 BF492 BF493 20MHz 300ns. 057fi BF492