68HC11
Abstract: AD10 AD11 AD12 AD14 HC11
Text: PSD GPLD PRIMER - PSD6XX/7XX/8XX Application Note 055 By Mark Rootz and Tim Wilkerson Abstract A PSD Programmable System Device is a peripheral device, which provides memory, logic, I/O, and other functions to a microcontroller unit (MCU). Internally, the PSD is a collection of programmable logic
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Key13
Key12
Key11
Key10
68HC11
AD10
AD11
AD12
AD14
HC11
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AN1955
Abstract: A113 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Text: MOTOROLA Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC
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MHVIC2114R2/D
MHVIC2114R2
MHVIC2114R2
AN1955
A113
AVX08051J1R0BBT
AVX08051J1R5BBT
AVX08051J2R2BBT
AVX08051J6R8BBT
TAJA105K035R
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A113
Abstract: AN1955 AVX08051J1R0BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J6R8BBT MHVIC2114R2 TAJA105K035R
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station
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MHVIC2114R2/D
MHVIC2114R2
MHVIC2114R2
A113
AN1955
AVX08051J1R0BBT
AVX08051J1R5BBT
AVX08051J2R2BBT
AVX08051J6R8BBT
TAJA105K035R
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80c196
Abstract: intel 80c196 microcontroller psd3xx 80C31 intel 80C198 80c251 zilog z80 A815 68hc711 80C196 intel
Text: Presentation #4: PSD Interface to Popular MCUs Return to Main Menu wsi98web4a.ppt 1 • • • • • • • • • • • • • • • Overview PSD fit with Popular MCUs Page 80C31/51 Based MCUs Intel, Philips, Dallas, Etc.
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wsi98web4a
80C31/51
80C251
80C51XA
80C196
80C186
80C188
80C386EX
68HC05
68HC11
80c196
intel 80c196 microcontroller
psd3xx
80C31 intel
80C198
80c251
zilog z80
A815
68hc711
80C196 intel
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7721-1PPS
Abstract: 7721-7PPS B51547F019 7721-13N 7721-6PPS B51547F005 7721-5PPS 7721-8PPS B51547F011 B51547F003
Text: Standard Products - Insulating Shoulder Washers Home | Contact Us | About Aavid | Sales Rep Log In -Useful Links- Search by part # Insulating Shoulder Washers RoHS Compliant Check distributor part inventory ● ● ● ● 40% glass filled polyphenylene sulfide PPS .
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565Nm
678Nm
452Nm
Not95)
B51547F005
7721-13N
B51547F011
7721-14N
B51547F018
7721-15N
7721-1PPS
7721-7PPS
B51547F019
7721-13N
7721-6PPS
B51547F005
7721-5PPS
7721-8PPS
B51547F011
B51547F003
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wideband fsk receiver
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR m h m i MC13055 TECHNICAL DATA Advance Information Wideband FSK Receiver T h e M C 13 055 is intended fo R F d ata link system s using c a rrie r frequencies up to 40 M H z a nd FSK fre q ue n cy sh ift keying data rates up to 2.0 M Baud
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MC13055
MC13055
wideband fsk receiver
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transistor d 2689
Abstract: MRF497
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 40 W NPN SILICON RF POWER TRANSISTOR . . . desig ne d fo r 12.5 vo lt VHF large-signal pow e r a m p lifie r a p p li ca tio n s in co m m ercial and in d u stria l e qu ipm e n t, o pe ra ting in the 25 to 50 MHz fre q u en cy range.
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O-220AB
MRF497
transistor d 2689
MRF497
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MC1723
Abstract: mc1723 ic AMO 0210 DM 0265 R 1E75 MC1723CL schematic of mc1723 MC1723cg MC1723G 15 1e75
Text: MOTOROLA SC -CTELECOMJ 14E D I b3b?aS3 DQfllflSb fl | T - g g -U -2 -S O RDERING INFORMATION Devfe* MC1723CD MC1723CG MC1723CL MC1723CP MC1723G MC1723L Altern ate Temperature Range TO to 0*0 to crc to (re to -55°C to - 55°C to LM723CH, pA723HC LM723CJ, MA723DC
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MC1723CD
MC1723CG
MC1723CL
MC1723CP
MC1723G
MC1723L
LM723CH,
JA723HC
LM723CJ,
fiA723DC
MC1723
mc1723 ic
AMO 0210
DM 0265 R
1E75
MC1723CL
schematic of mc1723
MC1723cg
MC1723G
15 1e75
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MRF477
Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear
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fci3ti72S4
MRF477
T0-220AB
L3b72S4
T-33-11
Pout-40WPEP
MRF477
MRF477 equivalent
mrf477 transistor
2 SC 2673 Q
1N4719
transistor MRF477
1S75
221A-04
RF POWER TRANSISTOR NPN
1270H
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SG3526
Abstract: sg1526 7m 0880 IC SG3526J 033S sg1526 power supply
Text: SG1526 SG2526 SG3526 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA P U L S E W ID T H M O D U L A T IO N C O N T R O L C IR C U IT T h e S G 1 5 2 6 is a h ig h p e rfo rm a n c e p u ls e w id th m o d u la to r in te g ra te d circu it in te n d e d for fixe d fre q u e n c y s w it c h in g r e g u la t o r s a n d
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SG1526
SG2526
SG3526
A00WBC
Y1U19C.
M98SC
SG3526
7m 0880 IC
SG3526J
033S
sg1526 power supply
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AMO 0210
Abstract: TDA4601 tda4601 SMPS CIRCUIT DIAGRAM bsc flyback transformer tv 1E75 1N4003 1N4006 ANE002 DM 0265 R 2x24 transformer 220
Text: MOTOROLA m SEMICONDUCTOR TDA4601 TECHNICAL DATA A d v an ce Inform ation FLYBACK CONVERTER CONTROL CIRCUIT C O N T R O L 1C F O R L IN E - IS O L A T E D F R E E R U N N IN G F L Y B A C K C O N V E R T E R SIL IC O N M O N O L IT H IC IN T EG R A T E D C IR C U IT
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TDA4601
CMH30HO:
AMO 0210
tda4601 SMPS CIRCUIT DIAGRAM
bsc flyback transformer tv
1E75
1N4003
1N4006
ANE002
DM 0265 R
2x24 transformer 220
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MRD821
Abstract: diode gi 3106 DIN5030 MLED81
Text: MOTOROLA • i SE M IC O N D U C TO R TECHNICAL DATA Photo Detector M R D 821 Diode Output This device ¡s designed fo r infrared rem ote control and other sensing applications, and can be used in conjunction w ith the MLED81 infrared em itting diode. •
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MLED81
MRD821
diode gi 3106
DIN5030
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017Q
Abstract: MOTOROLA TRANSISTOR 210
Text: MOTOROLA SC XSTRS/R F MbE D b3b?254 00*^73 b inoTt MOTOROLA Order this data sheet by MRA1618-35H/D SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power Transistor . . . designed primarily for wideband, large signal output and driver amplifier stages in the
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MRA1618-35H/D
MRA1618-35H
017Q
MOTOROLA TRANSISTOR 210
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a39 zener diode
Abstract: No abstract text available
Text: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high
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MTP25IM06E
a39 zener diode
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bo 139
Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing
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L3b72S4
0GflM703
BD135
BD137
BD139
225AA
bo 139
bd 1382 semiconductor
bo 137
BD 266 S
BD 139 N
bd 317
BD139.6
TR bd 139
BD139 NPN
BD 139 140
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BD 266 S
Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing
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b3b725M
BD136
BD138
BD140
O-225AA
0GflM70t
BD 266 S
BD140 pnp transistor
BD 136
to225a
transistor bd 140 -16
transistor 136 138 140
BD136.6
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA vvc DUAL VOLTAGE-VARIABLE CAPACITANCE DIODE SILICON EPICAP DIODE . . . designed for F M tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configu rations for m in im u m signal d istortio n and detuning. Th is device is
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MV104
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s0250
Abstract: IC LM 7905 Regulator Ic 7905 pin details to92 2ampere transistor LM 323K A770 LM123A REGULATOR IC 7905 OMS 1410 AISI 1045
Text: _ MOTOROLA SC {TELECOM} Q M O T O R O L 14E D I b3b7SS3 DQaiTMT s I LM123, LM123A LM223, LM223A LM323, LM323A A " F S g - lH ^ S p ecification s and A p plications Inform ation 3-AMPERE, 5 VOLT POSITIVE VOLTAGE REGULATORS S IL IC O N M O N O LIT H IC
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LM123,
LM123A
LM223,
LM223A
LM323,
LM323A
LM123
/LM223
/LM323
A00WBC
s0250
IC LM 7905
Regulator Ic 7905 pin details
to92 2ampere transistor
LM 323K
A770
REGULATOR IC 7905
OMS 1410
AISI 1045
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2n6082
Abstract: No abstract text available
Text: T -3 2 H I MOTOROLA SC XSTRS/R F MbE D b 3 b ?2 S 4 00*14153 2 « N O T b MOTOROLA I SEMICONDUCTOR ^ TECHNICAL DATA 2N6082 The R F L in e 25 W - 175 M H z RF POWER TRANSISTOR NPN SILICO N NPN S IL IC O N R F P O W ER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications
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2N6082
2N6082
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MJ10011
Abstract: S-80W
Text: M O T O R O L A SC XSTRS/R F 12 E D § b 3 b ? e S M O G Ó S O B T Û | MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLINGTON HORIZONTAL DEFLECTION TRANSISTOR 8.0 A M P E R E NPN SILICON D ARLINGTON POWER TRANSISTOR . . . specifically designed for use in deflection circuits.
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K1118
Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Text: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier
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b3b725M
MJ2955-
MJ2955A
MJ3029
K1118
MJ3029
transistor k 1119
transistor K 3532
d 1669 transistor
MJ2955 300 watts amplifier
MJ2955A
he01
Ic as20
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D895
Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Text: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | BD895, BD895A BD897, BD897A BD899, BD899A BD901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC POWER SILICON NPN DARLINGTONS DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS . for use as output devices in complementary general-purpose
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GGfl47bS
BD895,
BD895A
BD897,
BD897A
BD899,
BD899A
BD901
BD896,
D895
transistor Bd 699
transistor BD901
BD695A
BD895
D-897
bd897 motorola
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MRF5174
Abstract: IR 21025
Text: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.
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28-Volt.
400-MHz
MRF5174
IR 21025
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BUZ90
Abstract: BUZ90 MOSFET LSE 0405
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA BUZ90 P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate T his T M O S IV P o w e r FET is d e s ig n e d fo r high vo ltag e, high sp eed, lo w loss p o w e r sw itch in g a p p licatio n s such as
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BUZ90
21A-04
O-220AB
BUZ90
BUZ90 MOSFET
LSE 0405
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