TMPT6429
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25
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0003b0L
TMPT2221A
TMPT2222
TMPT2222A
TMPT2484
TMPT3903
TMPT3904
TMPT4124
TMPT4401
TMPT5088
TMPT6429
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TPQ2222
Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
Text: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic
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14-pin
TPQ2222
TPQ2222A
TPQ2369
TPQ6427
TPQ3904
TPQA06
TPQA05
TPQ2907
TPQ2907A
TPQ6700
2n2222 transistor pin b c e
2N3904
WPSA05
a1005-0a
TPQ6002
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mpsa25c
Abstract: MPS-A12 MPS6576C
Text: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type
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MPS6521C
MPS6530C
MPS6531C
MPS6532C
mpsa25c
MPS-A12
MPS6576C
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transistor a1023
Abstract: ULN2083A transistor D 667 C S2083 transistor D 667 S2083H
Text: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 S P R A GU E. I NC T3 0504330 D S E M I C O N D S / ICS 0003022 T • ALGR 93 D 03 8 2 2 ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS Five Independent NPN Transistors ■ p \E S IG N E D for use in general purpose, medium
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ULN-2083A
ULS-2083H
-2083A
S2083H
transistor a1023
ULN2083A
transistor D 667 C
S2083
transistor D 667
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603 transistor npn
Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type
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000b515
2N918
2N2222A
2N2369
2N2484
2N2907A
2N2945
2N3019
2N3117
2N3251A
603 transistor npn
2N3906 DS
transistor BC 312
603 transistor npn dj
bipolar BC transistor
BC847C di
PN 2n2222A
2n3904 2n3906
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current
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0003bS5
D50433Ã
GG03b5b
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e
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000b3A7
O-92ITO-226AA
TP2907
TP2907A
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THC3251A
Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro
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SG433a
2N918
THC918
2N2222A
THC2222A
2N2369
THC2369
2N2484
THC2484
2N2907A
THC3251A
pnp for 2n3019
312 2N3904
2N4033
2N3906 DS
2N3117
2n5401 2n3904
bcy71 ALTERNATIVE
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.
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0SD433Ã
DDD37DS
T-91-01
800mA
D37Db
T-91-Q1
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transistor a13
Abstract: A13 transistor
Text: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt
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0003b37
transistor a13
A13 transistor
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444
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000356b
2N3416
2N3417
TP3444
TP3564
TP3565
TP3566
TP3567
TP3568
TP3569
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faa 13
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC ^3 D • 0504330 0Q03bfi7 Ö ■ T-91-01 PROCESS FAA Process FAA PNP High-Power Transistor Process FAA is a double-diffused epitaxial planar PN P silicon device designed as a high-speed, highcurrent switch and for use in other high-power
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0Q03bfi7
T-91-01
0003L>
faa 13
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Untitled
Abstract: No abstract text available
Text: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its
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NPN Transistor BC548B
Abstract: BC548 BC238B npn bc337-40 npn transistor
Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB
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T092J
BC167A
BC167B
BC168A
BC168B
BC168C
BC169B
BC169C
BC182LA
BC182LB
NPN Transistor BC548B
BC548
BC238B npn
bc337-40 npn transistor
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Untitled
Abstract: No abstract text available
Text: AL L E G R O MICROSYSTEMS INC » 0504330 0 0 0 3 7 Ô 1 Q I ALGR T-91-01 PROCESS BQB Process BQB Power Schottky Diode P ro c e ss B Q B is a silicon Schottky-barrier diode with a typical breakdown-voltage rating of 45V. D e sign e d for high-power applications, it ca n sustain a
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0S0433Ã
DG037Ã
T-91-01
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THC697
Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917
Text: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 S P R A GU E. “13 5 • 0504330 0003550 S E M I C O N D S / ICS 3 ■ AL 6R l'Alto 93 D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C
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05G433Ã
03558P
BRJC80
THC697
THC699
THC718
THC760
THC2222
THC2222A
THC2243
THC760A
THC915
THC916
THC917
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in
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DD037S3
50433A
T-91-01
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A80G
Abstract: back-emf motor A8932CLW
Text: ALLEGRO MICROSYSTEMS INC 33E 0504330 0005340 IAL6R VO ICE C O IL M O TO R D R IV E R Providing control and drive of the voice coil motor used for head positioning in 5 V disk drive applications,-the A8932CLW is a full-bridge driver which can be configured so that its output current is a direct
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PP-042
A8932CLW
uvT01D
A80G
back-emf motor
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A13 transistor
Abstract: No abstract text available
Text: L _ . , . AL L E G R O M I C R O S Y S T E M S INC T3 » • 0504330 0003^5 7 ■ AL6R T-91-01 PROCESS FEE Process FEE NPN Small-Signal Transistor The F E E Process results in double-diffused silicon
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T-91-01
DS0433Ã
T-91-01
A13 transistor
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UDN2951Z-2
Abstract: Q19A UDN2955W-2
Text: ALLEGRO MICROSYSTEMS INC 33E D 0504330 » A .* * - ' ^ .s U '.U L . JJ 0005155 L.' J « ’ » '.V 7 • /l|L6R Í f T - 5Z - n HIGH-CURRENT HALF-BRIDGE POWER DRIVER GROUND ~ SUPPLY E l NO CONNECTION E l SOURCE OUT E l o SOURCE IN E l SENSE E l ENABLE | SINK IN E l
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PP-023
UDN2955W-2
UDN2951Z-2
Q19A
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0 0 0 3 7 clb 2 ■ ALGR T-91-01 PROCESS YAA Process YAA Power Diode Process YAA is a silicon epitaxial P on N diode designed for high-power applications. It can operate with a forward current of up to 3A. r * - ABSOLUTE MAXIMUM RATINGS
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0SQ433Ã
OG37clb
T-91-01
/-55C
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MPS3405C
Abstract: MPS3414C MPS3415C MPS3416C MPS3417C MPS3563C MPS3565C MPS3566C MPS3567C MPS3568C
Text: ALLEGRO MICROSYSTEMS INC 85 140 19 SP RA GU E. D T3 • 0504330 G0G3SbS S ■! AL6R S E M I C O N D S / ICS TA 9 3 D 03 5 6 5 ^ BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C DC Current Gain
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G5DM33Ã
MPS3405C
MPS3414C
MPS3415C
MPS3416C
MPS3417C
1807C
MPS5172C
MPS5305C
MPS5306C
MPS3563C
MPS3565C
MPS3566C
MPS3567C
MPS3568C
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 33 E D 0504330 000Sb2ô 2 BIAL GR COUNTDOWN POWER TIMERS MODE SELECT NO CONNECTION NO CONNECTION Dwg. PS-016 The ULQ2436M and ULQ2437M are rugged, long-duration count down timers specifically designed to operate in an automotive or
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000Sb2Ã
PS-016
ULQ2436M
ULQ2437M
ES-013
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Untitled
Abstract: No abstract text available
Text: AL L E G R O MICROSYSTEMS INC T3 » • 0504330 0003bôl 7 ■ ALGR T-91-01 PROCESS DMA Process DMA NPN Small-Signal Transistor Process DMA is a double-diffused NPN silicon epitaxial planar device designed for use in VH F and UHF amplifiers, mixers, and oscillators.
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0003bÃ
T-91-01
QS0433Ã
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