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    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION LOC I ALL RIGHTS RESERVED. BY - 20 2 3 TYPICAL APPLICATION 1 REVISIONS DIST 2 P A A1 D DWN APVD FIRST ISSUE 17FEB2010 AV GT REVISED MARKS ON -5 WAS MARKED AC 04OCT2011 AV GT REVISED PER ECR-13-009678


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    PDF 04OCT2011 ECR-13-009678 18SEP2013 17FEB2010

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST B LTR DESCRIPTION BA2 DWN DATE ECR-13-015529 APVD TN KR 04OCT2013 2008 RECOMMENDED LAND PATTERN FOR INDUCTANCE VALUES 100µH OR HIGHER 10.3 0.3 2.2 2.2 12.7 1.0 11.0 0.5 0.8 2.5 RELEASED FOR PUBLICATION


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    PDF ECR-13-015529 04OCT2013 03-Sep-08 3632B

    BIOS Flash ROM Chip

    Abstract: M50FW040 PLCC32 TSOP32
    Text: M50FW040 4-Mbit 512 Kb x8, uniform block 3-V supply firmware hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12V for fast Erase (optional) ■ Two interfaces – Firmware hub (FWH) interface for


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    PDF M50FW040 33-MHz BIOS Flash ROM Chip M50FW040 PLCC32 TSOP32

    Untitled

    Abstract: No abstract text available
    Text: 2N2219AHR Hi-Rel NPN bipolar transistor 40 V, 0.8 A Datasheet — production data Features BVCEO 40 V IC max 0.8 A HFE at 10 V - 150 m > 100 Operating temperature range - 65 °C to + 200 °C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics


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    PDF 2N2219AHR 2N2219AHR

    marking code e3

    Abstract: No abstract text available
    Text: M95M02-DR 2-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 2 Mb (256 Kbytes) of EEPROM – Page size: 256 bytes SO8N (MN) 150 mil width ■ Write – Byte Write within 10 ms


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    PDF M95M02-DR 200-year marking code e3

    Untitled

    Abstract: No abstract text available
    Text: L6480 Fully integrated microstepping motor driver with motion engine and SPI Datasheet − production data Features • Operating voltage: 7.5 V - 85 V ■ Dual full bridge gate driver for N-channel MOSFETs ■ Fully programmable gate driving ■ Embedded Miller clamp function


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    PDF L6480 HTSSOP38 1/128-step

    Untitled

    Abstract: No abstract text available
    Text: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA General features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)


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    PDF STGP19NC60W O-220

    tqfp 10x10 tray

    Abstract: LQFP32 LQFP44 LQFP64 ST72361 ceramic resonator filter 024 marking bidirectional diode sim 900 application
    Text: ST72361 8-bit MCU with Flash or ROM, 10-bit ADC, 5 timers, SPI, 2x LINSCI Features • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices


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    PDF ST72361 10-bit 64-pin tqfp 10x10 tray LQFP32 LQFP44 LQFP64 ST72361 ceramic resonator filter 024 marking bidirectional diode sim 900 application

    ad574

    Abstract: No abstract text available
    Text: Tuesday, Feb 19, 2008 3:27 PM / 12-Bit-ADC with Microprocessor Interface AD574 1.0 SCOPE This specification documents the detailed requirements for Analog Devices space qualified die including die qualification as described for Class K in MIL-PRF-38534, Appendix C, Table C-II except as


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    PDF 12-Bit-ADC AD574 MIL-PRF-38534, com/AD574 MIL-STD-883 ASD0012706 04-Oct-2001 4-Mar-03 ad574

    M50FW040

    Abstract: PLCC32
    Text: M50FW040 4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations ■ – VPP = 12V for Fast Erase (optional) TWO INTERFACES – Firmware Hub (FWH) Interface for embedded


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    PDF M50FW040 512Kb PLCC32 TSOP40 M50FW040 PLCC32

    cpu 226

    Abstract: ST72 ST72361 TQFP32 TQFP44 TQFP64 TIM16 062d
    Text: ST72361 8-BIT MCU WITH FLASH OR ROM, 10-BIT ADC, 5 TIMERS, SPI, 2x LINSCI • ■ ■ ■ ■ Memories – 16K to 60K High Density Flash HDFlash or ROM with read-out protection capability. InApplication Programming and In-Circuit Programming for HDFlash devices


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    PDF ST72361 10-BIT 64-pin 21places cpu 226 ST72 ST72361 TQFP32 TQFP44 TQFP64 TIM16 062d

    Untitled

    Abstract: No abstract text available
    Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C 1 creo 20 ALL RIGHTS RESERVED. BY - COPYRIGHT20 2 3 Creo Parametric 2.0 REVISIONS P DO NOT REVISE EXCEPT BY CAD LTR C DESCRIPTION DATE REVISED DESIGN ECO-13-018731 DWN NCL 04DEC2013 APVD GOJ 25,3 D


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    PDF ECO-13-018731 04DEC2013 04OCT2000 05OCT2000

    mb622

    Abstract: led moving message display components joystick switch MB623 ST7LITE39 moving message display with key board lcd message using rf led message board circuits message display on LED scrolling led small
    Text: UM0450 User manual Getting started with the SN2X-PRIMER kit Overview The SN2X-PRIMER kit represents a ready-to-run ZigBee network provided with two network nodes acting as the Coordinator and Router in compliance with standard ZigBee® specifications. Definitions for Coordinator, Router, and other ZigBee® concepts are provided


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    PDF UM0450 mb622 led moving message display components joystick switch MB623 ST7LITE39 moving message display with key board lcd message using rf led message board circuits message display on LED scrolling led small

    E250NS10

    Abstract: st 358 st marking code STE250NS10
    Text: STE250NS10 N-channel 100 V, 0.0045 Ω, 220 A, ISOTOP STripFET Power MOSFET Features Type VDSS STE250NS10 100 V • Standard threshold drive ■ 100% avalanche tested RDS on ID <0.0055 Ω 220 A Description ISOTOP This Power MOSFET is the latest development of


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    PDF STE250NS10 STE250ny E250NS10 st 358 st marking code STE250NS10

    K129

    Abstract: TSV6191 SC70-5 v619 k129 amplifier K110 V6192I
    Text: TSV6191, TSV6191A, TSV6192, TSV6192A Rail-to-rail input/output 10 A, 450 kHz CMOS operational amplifiers Features TSV6191ILT - TSV6191ICT • Rail-to-rail input and output ■ Low power consumption: 10 µA typ at 5 V ■ Low supply voltage: 1.5 to 5.5 V


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    PDF TSV6191, TSV6191A, TSV6192, TSV6192A TSV6191ILT TSV6191ICT OT23-5/SC70-5 TSV6192IST TSV6192ID/DT K129 TSV6191 SC70-5 v619 k129 amplifier K110 V6192I

    LQFP44

    Abstract: TDA7407 TDA7407TR
    Text: TDA7407 Advanced car signal processor Features ● Fully integrated signal processor optimized for car radio applications ● Fully programmable by i2c bus ● Includes audioprocessor, stereo decoder with noise blanker and multipath detector ● Softmute function


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    PDF TDA7407 LQFP44 TDA7407 TDA7460/61. TDA7407TR LQFP44 TDA7407TR

    transistor EP 430

    Abstract: BA157 STC03DE150 BA157 equivalent
    Text: STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features n n n n VCS ON IC RCS(ON) 1V 1.8 A 0.55 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V


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    PDF STC03DE150 STC03DE150 O247-4L transistor EP 430 BA157 BA157 equivalent

    Untitled

    Abstract: No abstract text available
    Text: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V


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    PDF M68AR024D TFBGA48

    N3NF06L

    Abstract: STN3NF06L
    Text: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive


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    PDF STN3NF06L OT-223 OT-223 STN3NF06L N3NF06L

    Untitled

    Abstract: No abstract text available
    Text: M95128 M95128-W M95128-R 128 Kbit serial SPI bus EEPROM with high speed clock Features • Compatible with SPI bus serial interface positive clock SPI modes ■ Single supply voltage: – 4.5 to 5.5 V for M95128 – 2.5 to 5.5 V for M95128-W – 1.8 to 5.5 V for M95128-R


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    PDF M95128 M95128-W M95128-R M95128 M95128-W M95128-R 40-year

    STGP19NC60WD

    Abstract: No abstract text available
    Text: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)


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    PDF STGP19NC60W O-220 O-220 STGP19NC60W STGP19NC60WD

    N3NF06

    Abstract: No abstract text available
    Text: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description


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    PDF STN3NF06 OT-223 OT-223 STN3NF06 N3NF06

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWI NG IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3HTS LOC RESERVED. REV I S I O N S D I ST FT LTR DE S C R I P T I O N DWN DATE REVISED EC 0 G 3 B - 0 7 4 6 - 0 4 04OCT2OO4 SW REVISED PER E C O - 06 - 2 70 3


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    PDF IMAR200U 5FEB200 27JUL2004

    BAS 3020

    Abstract: No abstract text available
    Text: 2 THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3HTS LOC r CONTACT \T s f1 REV I S I O N S D I ST AD RESERVED. 47 LTR DE S C R I P T I O N V APVD I 3J1JN00 MDL MDL R E V P E R EC O U I B - O I 6 2 - 0 I


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    PDF 3J1JN00 04OCT2 27jjm I20795 MAR200Ü BAS 3020